• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.27 no.2
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• pp.49-61
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• 1997

The purpose of this study was to compare E-speed film, CDR, and modified CDR images by means of observing some artificial defects of alveolar bone wall in the sound human dried mandibles. High diagnostic accuracy was shown in 1 wall and 4 wall defects by all 5 observers (2 Radiologists, 2 Periodontists, 1 General practitioner), but the diagnosis in 2 wall and 3 wall defects was inaccurate. Modified CDR images had the more diagnostic accuracy than E-speed film and CDR images, but there was no statistical difference among them. Finally, radiologist used modified CDR images more than others and used equalization effect more than the change in contrast and/or brightness.

• Journal of the Korean institute of surface engineering
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• v.35 no.5
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• pp.289-294
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• 2002

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $\mu\textrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$\mu\textrm{m}$~1.8$\mu\textrm{m}$. In the thicker range than 1.8$\mu\textrm{m}$ was measured hardly defects.

• Journal of IKEEE
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• v.18 no.2
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• pp.234-239
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• 2014

This paper proposes a new automatic detection method to inspect mura defects on display film surface using morphological image processing and labeling. This automatic detection method for mura defects on display films comprises 3 phases of preprocessing with morphological image processing, Gabor filtering, and labeling. Since distorted results could be obtained with the presence of non-uniform illumination, preprocessing step reduces illumination components using morphological image processing. In Gabor filtering, mura images are created with binary coded mura components using Gabor filters. Subsequently, labeling is a final phase of finding the mura defect area using the difference between large mura defects and values in the periphery. To evaluate the accuracy of the proposed detection method, detection rate was assessed by applying the method in 200 display film samples. As a result, the detection rate was high at about 95.5%. Moreover, the study was able to acquire reliable results using the Semu index for luminance mura in image quality inspection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.152-153
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• 2007

$CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of Information Display
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• v.1 no.1
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• pp.14-19
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• 2000

Due to distinct properties of plastic substrates such as poor thermal resistance, non-rigidness and high thermal expansion, it is difficult to fabricate plastic film LCDs by conventional LCD processes. Poor thermal resistance and high thermal expansion of substrates induced deformation of substrates surface, mismatch of thermal expansion between ITO electrodes and substrates resulted in defects in the ITO electrodes during the high temperature process. Defects of ITO electrodes and non-uniform cell gap caused by non-rigid and flexible properties were also observed in the pressuring process. Based on in these observations, we used a newly developed material and fabrication process to prevent deformation of substrates, defects of electrodes and to maintain uniform cell gap. The maximum temperature of the process is limited up to $110^{\circ}C$ and pressure loaded during the process is five times less than conventional one. With these invented processes and materials, we obtained highly reliable Plastic Film STN LCDs whose electro-optical characteristics are better than or equivalent to those of typical glass LCDs.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.10 no.1
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• pp.63-68
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• 1980

The purpose of this article is to re-examine the roentgenographic appearance of alveolar osseous in an effort to determine the value of the orthopantomogram in the diagnosis of periodontal disease. A total of 158 osseous lesions from 13 human dry skulls were studied. 14 Ultra-speed periapical films, 2 bitewing films and Kodak panoramic film are used to obtain radiographs of all defects. The bisecting technic was used, with a target-film distance of. 8 inches and exposure factors of 70 kVp, 10MA and 0.4 sec. at anterior teeth, 0.6 see at posterior teeth in exposure time. For orthopantomogram, Panoura Eight-C was used with a exposure factors of 90kVp, 10MA. and 15sec. exposure time. All films were developed in a light. tight darkroom at 68°F for 4½ minutes. Comparison of orthopantomogram and intraoral films on the view-box was carefully studied in relation to the types of osseous defect visually evident; Proximal intraosseous defects, Interproximal craters, Interproximal hemisepta, Furcal defects on multirooted teeth, and Facial or Lingual one-walled defects. The results obtained were as follows; 1. Proximal osseous defects throughout the dental arches and furcal defects on facial and lingual surfaces of multirooted teeth can be identified with a high degree of accuracy from their orthopantomographic appearances. 2. Lesions on facial or lingual surface of the alveolar arches are rather difficult to locate or recognize on the dental radiographs. 3. In determining whether the proximal and furcal lesions are located facially or lingually, Orthopantomogram is superior to the conventional film Orthopantomogram obtained with standardization of head in proper position revealed the complete visualization of alveolar bone without showing occlusal surface of molars and proximal superimposition of teeth. Thus, on the standardized orthopantomograms, The roentgenographic characteristics of each defect were determined.

• Journal of Korea Multimedia Society
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• v.13 no.8
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• pp.1115-1127
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• 2010

In order to increase the productivity in manufacturing TFT-LCD(thin film transistor-liquid crystal display), it is essential to classify defects that occur during the production and make an appropriate decision on whether the product with defects is scrapped or not. The decision mainly depends on classifying the defects accurately. In this paper, we present an effective classification method for film defects acquired in the panel production line by analyzing the intensity distribution and shape feature of the defects. We first generate a binary image for each defect by separating defect regions from background (non-defect) regions. Then, we extract various features from the defect regions such as the linearity of the defect, the intensity distribution, and the shape characteristics considering intensity, and construct a referential image database that stores those feature values. Finally, we determine the type of a defect by matching a defect image with a referential image in the database through the matching cost function between the two images. To verify the effectiveness of our method, we conducted a classification experiment using defect images acquired from real TFT-LCD production lines. Experimental results show that our method has achieved highly effective classification enough to be used in the production line.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.307-311
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• 2010

Positron annihilation lifetime spectroscopy is applied to BaSrFBr : Eu film which is used for the phosphore layer, and afterwards the reliability and self-consistency of source corrections in the positron lifetime spectroscopy is investigated using a $^{22}Na$ positron emitter covered by thin foils. The positron lifetime showed no significant change through the various proton irradiation energies. It is unusual that the measurements of the defects indicate that most of the defects were likely to have been generated by X-ray radiation. This may have resulted from the Bragg peaks of the proton characteristics. The Bragg peak does not affect the defect signals enough to distinguish the lifetimes and intensities in a material that is includes multi-grains. The lifetime ($\tau_1$) associated with positron annihilations in the Ba, Br, and Eu of the sample was about 250 ps, and due to the annihilations at F-centers or defects from the irradiated protons in sample, the lifetime ($\tau_2$) was about 500 ps.

• Journal of Information Display
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• v.8 no.2
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• pp.25-31
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• 2007

MgO thick film for ac-PDPs was formed via electrophoresis deposition process and its effect on luminance and luminance efficiency were evaluated. The electrophoresis deposition process of MgO thick film was optimized through parametric study and defects levels in MgO powders was evaluated using cathodoluminescence spectra measurements. The results demonstrate a possibility of using MgO thick film as electron emission layer for ac-PDPs.