• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.325-328
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced $\Delta$ Rp increase using buffered N- implantation with tilt and 4X-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N- concentration which is intentionally caused by Ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation.

• Journal of Mechanical Science and Technology
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• v.15 no.8
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• pp.1174-1180
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• 2001

Various experimental data, including mixing areas, cross correlation factors, surface flow patterns on nozzle walls, and far field noise spectra, was used to draw a noise control mechanism in a supersonic jet. In the underexpanded case, mixing of the jet air with ambient air was significantly enhanced as presented before, and mixing noise was also dramatically reduced. Screech tones, in the overexpanded case, were effectively suppressed by trailing edge modifications, although mixing enhancement was not noticeable. From mixing and noise performance of nozzles with modified trailing edges, enhancing mixing through streamwise vortices seems an effective way to reduce mixing noise in the underexpanded flow regime. However, screech tones in the overespanded flow regime is well controlled or suppressed by making shock cells and/or spanwise large scale structures irregular and/or less organized by a proper selection of trailing edges. The noise field in the overexpanded flow regime was greatly affected by the symmetricity of the nozzle exit geometry. In the underexpanded flow regime, the effects of the symmetricity of the nozzle exit on mixing were negligible.

• Wind and Structures
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• v.6 no.4
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• pp.307-324
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• 2003

The paper presents results of studies concerning wind-induced aeolian vibration and fatigue of a 110 kV covered conductor overhead line. Self-damping measurement techniques are discussed: power method is found to be the most reliable technique. A method for compensating tension variations during the self-damping test is presented. Generally used empirical self-damping power models are enhanced and the different models are compared with each other. The Energy Balance Analysis (EBR) is used to calculate the aeolian vibration amplitudes, which thereafter are converted to bending stress for the calculation of conductor lifetime estimate. The results of EBA are compared with field measurements, Results indicate that adequate lifetime estimates are produced by EBA as well as field measurements. Generally the EBA gives more conservative lifetime expectancy. This is believed to result from the additional damping existing in true suspension structures not taken into account by EBA. Finally, the correctness of the line design is verified using Cigre's safe design tension approach.

• Computers and Concrete
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• v.1 no.3
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• pp.227-248
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• 2004

A combined experimental-computational study of a double edge-notched stone specimen subjected to tensile loading is presented. In the experimental part, the load-deformation response and the displacement field around the crack tip are recorded. An Electronic Speckle Pattern Interferometer (ESPI) is used to obtain the local displacement field. The experimental results are used to validate a numerical model for the description of fracture using finite elements. The numerical model uses displacement discontinuities to model cracks. At the discontinuity, a plasticity-based cohesive zone model is applied for monotonic loading and a combined damage-plasticity cohesive zone model is used for cyclic loading. Both local and global results from the numerical simulations are compared with experimental data. It is shown that local measurements add important information for the validation of the numerical model. Consequently, the numerical models are enhanced in order to correctly capture the experimentally observed behaviour.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.37-40
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• 2001

The semiconductor's design rule becomes more stringent, hence the silicon-dioxide etching technique is important issue. In this work we compared the etching characteristics of different three types of Plasma source, Normal ICP, magnetized ICP and E-IC $P^{TM}$. The E-IC $P^{TM}$ source shows higher etch rate at lower pressure and this is advantageous for the fine pattern process. The etching characteristics were varied with external magnetic field frequency at I-lCP and this is examined with Nanospe $c^{TM}$ and SEM. We designed Langmuir probe system for time resolved diagnosis. ion density of E-ICP is varying periodically with the applied external magnetic field frequencyquency

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2003.09a
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• pp.91-94
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• 2003

A field pilot-scale demonstration of an enhanced SVE using hot air injection and extraction was conducted to remove diesel range compounds from subsurface soils at a site in J-city, Korea. The objective of demonstration was to evaluate field ISR by intrinsic microorganism after an application study of hot air-SVE technology and to calculate each first-order kinetic with soil temperature. TPH concentration of contaminated soil at the site was approximately 2, 000~11, 000 mg/kg (average 6, 900 mg/kg) with depths greater than 5 m bgs. The 1st-order reaction rate constants, k were 0.0438(@about5$0^{\circ}C$), 0.0564(@4$0^{\circ}C$), and 0.0685(@33$^{\circ}C$) d-1 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.111-114
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• 2003

Compared to a conventional atomic layer deposition (ALD) grown Al203 film, Plasma enhanced ALD (PEALD) grown AION film was revealed to possess a large breakdown field, which is necessary for stable operation of thin film electroluminescent (TFEL) device. Also, AION is more stable than Al203 films grown by PEALD or by ALD after post-annealing process, which is inevitably required to improve luminance property of phosphor. Furthermore, AION films were applied to insulators of ZnS:Tb TFEL device. Resultant1y, they show better stability than ALD grown insulators under high electric field.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2307-2308
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• 2008

We observed internal space charge behavior for two types of epoxy composites under dc electric fields to investigate the influence of water at high temperature. In the case of glass/epoxy specimen, homocharge is observed at water-treated specimen, and spatial oscillations become clearer in the water-treated specimens. Electric field in the vicinity of the electrodes shows the injection of homocharge. In aramid/epoxy specimens, heterocharge is observed at water-treated specimens, i.e. negative charge accumulates near the anode, while positive charge accumulates near the cathode. Electric field is enhanced just before each electrode. In order to further examine the mechanism of space charge formation, we have developed a new system that allows in situ space charge observation during ion migration tests at high temperature and high humidity. Using this in situ system.

• East Asian mathematical journal
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• v.26 no.2
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• pp.179-190
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• 2010

We study the theoretical background on the relationship between the equality property and operations treated in different sub-areas in secondary school mathematics curriculum respectively studied. Furthermore, we discuss in detail the equality property in rational numbers field $\mathbb{Q}$ and the real numbers field $\mathbb{R}$. Through this study, professional knowledges of school teachers are enhanced so that these aforementioned knowledges are connected smoothly to teaching activities in classrooms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.90-93
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• 1996

The conduction mechanisms of the off-current in low temperature ($\leq$600$^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT's) has been systematically studied. Especially, the temperature and bias dependence of the off-current between unpassivated and passivated poly-Si TFT's was investigated and compared. The off-current of unpassivated poly-Si TFT's is due to a resistive current at low gate and drain voltage, thermal emission current at high gate, low drain voltage, and field enhanced thermal emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation, it was observed that the off-currents were remarkably reduced by plasma-hydrogenation. It was also observed that the off-currents of the passivated poly-Si TFT's are more critically dependent on temperature rather than electric field.