Magnetization Frequency Dependence of Enhanced Inductively Coupled Plasma and Etching Characteristics

자화주파수에 따른 플라즈마 및 산화막식각특성에 관한 연구

The semiconductor's design rule becomes more stringent, hence the silicon-dioxide etching technique is important issue. In this work we compared the etching characteristics of different three types of Plasma source, Normal ICP, magnetized ICP and E-IC $P^{TM}$. The E-IC $P^{TM}$ source shows higher etch rate at lower pressure and this is advantageous for the fine pattern process. The etching characteristics were varied with external magnetic field frequency at I-lCP and this is examined with Nanospe $c^{TM}$ and SEM. We designed Langmuir probe system for time resolved diagnosis. ion density of E-ICP is varying periodically with the applied external magnetic field frequencyquency