• Title/Summary/Keyword: Field ring

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Analysis of Rectangular Ring Microstrip Antenna (사각 링 마이크로스트립 안테나 해석)

  • 서동국;박병우
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.1
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    • pp.60-67
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    • 2004
  • In this paper, a rectangular ring microstrip patch antenna has been analyzed by using desegmentation method and evaluation impedance matrices from Green's functions fur rectangular segment and desegmentation method for analysis of planar electro-magnetic structures is discussed. As the rectangular ring cavity could be seen as a structure subtracted a small rectangular cavity from a large one, the overall impedance matrix was obtained by applying a multiport connection method to the individual impedance matrices expressed as a term of Green's function fer rectangular segment. The electromagnetic fields can be solved from a vector potential which is satisfied it's eight boundary conditions. The electric field distribution at each edges was expressed as a histogram table with exciting modes. These results can be used to analyze the operational modes for a rectangular ring microstrip antennas.

Removal of Ring Artifact in Computed Tomography (전산화단층촬영장치에서 링 아티팩트 제거)

  • Chon, Kwon Su
    • Journal of the Korean Society of Radiology
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    • v.9 no.6
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    • pp.403-408
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    • 2015
  • Hard X-ray has been widely used in medical and industrial fields because it can be applied to observe the inside of a sample. Computed tomography provides sectional images of the sample through the reconstruction of the projection images. The quality of sectional images strongly depends on that of projection images. Ring artifact appeared on the seconal image can be made by the abnormal pixels of the detector used. In this study, we examine the ring artifact ratio in the circle phantom as a function of detection error of the detector used in computed tomography. The ring artifact increased with the increment of detection error under parallel and fan beam geometries and strongly increased near the center of rotation. The corrections, dead pixel and flat field corrections, for the images taken with the detector are required before the image reconstruction process to reduce the ring artifact in the computed tomography.

Analysis of the Effect of the Etching Process and Ion Injection Process in the Unit Process for the Development of High Voltage Power Semiconductor Devices (고전압 전력반도체 소자 개발을 위한 단위공정에서 식각공정과 이온주입공정의 영향 분석)

  • Gyu Cheol Choi;KyungBeom Kim;Bonghwan Kim;Jong Min Kim;SangMok Chang
    • Clean Technology
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    • v.29 no.4
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    • pp.255-261
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    • 2023
  • Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

Lean Burn Combustion Characteristics of Propane Premixed Flame in Electric Field (전기장 인가에 따른 프로판 예혼합 화염의 희박연소 특성)

  • Minseok Kim;Junyoung Choi;Taehun Kim;Hyemin Kim
    • Journal of ILASS-Korea
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    • v.28 no.1
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    • pp.24-31
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    • 2023
  • In this study, characteristics of a propane-air premixed flame sin DC electric field was investigated. The stainless steel Bunsen burner and the stainless steel ring were used as electrode, and the high voltage supply was used for applying electric field. Flammability range increased significantly when the positive voltage was applied because of extension of LBO limit, while it shrank when the negative voltage was applied. The reason for this was not much related to the burning velocity, but the induced flow around the burner by electric field. withNOx production slightly increased after positive voltage was applied in identical equivalence ratio. Nevertheless, it was advantageous to apply the positive electric field to reduce the NOx since the extension of LBO limit makes the burner possible to operate in very low equivalence ratio.

An analysis on the torque of hysteresis-motor concerned with penetration-effect of magnetic -field and eddy-current (자계 및 와전류 침수효과를 고려한 히스테리시스 전동기의 토오크에 대한 해석법)

  • 정연택
    • 전기의세계
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    • v.29 no.9
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    • pp.594-598
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    • 1980
  • This paper describes an analytical method on the starting torque of hysteresis motor, taking account of penetration effects of magnetic-field and eddy-current into the rotor, to the elliptical approximation method of hysteresis-loop. By the above method, it have obtained the torque of rotor ring with non-magnetic and non-conductive material arbor, and the results are concerned and compared with that of computed by aid of callibration factor, k=1+exp(-2t$_{r}$/.delta.).)

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CENTRAL SEPARABLE ALGEBRAS OVER REGULAR DOMAIN

  • Choi, Eun-Mi;Lee, Hei-Sook
    • Bulletin of the Korean Mathematical Society
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    • v.36 no.3
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    • pp.503-512
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    • 1999
  • Over a field k, every schur k-algebra is a cyclotomic algebra due to Brauer-Witt theorem. Similarly every projective Schur k-division algebra is itself a radical algebra by Aljadeff-Sonn theorem. We study the two theorems over a certain commutative ring, and prove similar results over regular domain containing a field.

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FORMULAS OF GALOIS ACTIONS OF SOME CLASS INVARIANTS OVER QUADRATIC NUMBER FIELDS WITH DISCRIMINANT D ≡ 1(mod 12)

  • Jeon, Daeyeol
    • Journal of the Chungcheong Mathematical Society
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    • v.22 no.4
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    • pp.799-814
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    • 2009
  • A class invariant is the value of a modular function that generates a ring class field of an imaginary quadratic number field such as the singular moduli of level 1. In this paper, using Shimura Reciprocity Law, we compute the Galois actions of some class invariants from the generalized Weber functions $\mathfrak{g}_0,\mathfrak{g}_1,\mathfrak{g}_2$ and $\mathfrak{g}_3$ over quadratic number fields with discriminant $D{\equiv}1$ (mod 12).

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GALOIS ACTIONS OF A CLASS INVARIANT OVER QUADRATIC NUMBER FIELDS WITH DISCRIMINANT D≡64(mod72)

  • Jeon, Daeyeol
    • Journal of the Chungcheong Mathematical Society
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    • v.26 no.1
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    • pp.213-219
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    • 2013
  • A class invariant is the value of a modular function that generates a ring class field of an imaginary quadratic number field such as the singular moduli of level 1. In this paper, we compute the Galois actions of a class invariant from a generalized Weber function $g_1$ over imaginary quadratic number fields with discriminant $D{\equiv}64(mod72)$.

EXAMPLES OF NEAR-RING NEUMANN SYSTEMS

  • McQuarrie, B.C.;Malone, J.J.
    • Kyungpook Mathematical Journal
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    • v.28 no.1
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    • pp.39-44
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    • 1988
  • In 1940, B. H. Neumann, working with a system more general than a near-field, proved that the additive group of such a system (and of a near-field) is commutative. The algebraic structure he used is known as a Neumann system (N-system). Here, the prime N-systems are classified and for each possible characteristic, examples of N-systems which are neither near-fields nor rings are given. It is also shown that a necessary condition for the set of all odd polynomials over GF(p) to be an N-system is that p is a Fermat prime.

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LOCAL DERIVATIONS OF THE POLYNOMIAL RING OVER A FIELD

  • Yon, Yong-Ho
    • Bulletin of the Korean Mathematical Society
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    • v.36 no.2
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    • pp.247-257
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    • 1999
  • In this article, we give an example of local derivation, that is not derivation, on the algebra F(x1,…, xn) of rational functions in x1, …, xn over an infinite field F, and show that if X is a set of symbols and {x1,…, xn} is a finite subset of X, n$\geq$1, then each local derivation of F[x1,…, xn] into F[X] is a F-derivation and each local derivation of F[X] into itself is also a F-derivation.

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