• Title/Summary/Keyword: Field plate

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Two-dimensional Simulation Study on Optimization of Gate Field Plate Structure for High Breakdown Voltage AlGaN/GaN-on-Si High Electron Mobility Transistors (고내압 전력 스위칭용 AlGaN/GaN-on-Si HEMT의 게이트 전계판 구조 최적화에 대한 이차원 시뮬레이션 연구)

  • Lee, Ho-Jung;Cho, Chun-Hyung;Cha, Ho-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.12
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    • pp.8-14
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    • 2011
  • The optimal geometry of the gate field plate in AlGaN/GaN-on-Si HEMT has been proposed using two-dimensional device simulation to achieve a high breakdown voltage for a given gate-to-drain distance. It was found that the breakdown voltage was drastically enhanced due to the reduced electric field at the gate corner when a gate field plate was employed. The electric field distribution at the gate corner and the field plate edge was investigated as functions of field plate length and insulator thickness. According to the simulation results, the electric field at the gate corner can be successfully reduced even with the field plate length of 1 ${\mu}m$. On the other hand, when the field plate length is too long, the distance between field plate and drain electrode is reduced below a critical level, which eventually lowers the breakdown voltage. The highest breakdown voltage was achieved with the field plate length of 1 ${\mu}m$. According to the simulation results varying the $SiN_x$ film thickness for the fixed field plate length of 1 ${\mu}m$, the optimum thickness range of the $SiN_x$ film was 200 - 300 nm where the electric field strength at the field plate edge counterbalances that of the gate corner.

Improving The Breakdown Characteristics of AlGaN/GaN HEMT by Optimizing The Gate Field Plate Structure (게이트 필드플레이트 구조 최적화를 통한 AlGaN/GaN HEMT 의 항복전압 특성 향상)

  • Son, Sung-Hun;Kim, Tae-Geun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.5
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    • pp.1-5
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    • 2011
  • In this paper, we optimize the gate field plate structure to improve breakdown characteristics of AlGaN/GaN HEMT by two-dimensional device simulator. We have simulated using three parameters such as field-plate length, types of insulator, and insulator thickness and thereby we checked change of the electric field distribution and breakdown voltage characteristics. As optimizing field-plate structure, electric fields concentrated near the gate edge and field-plate edge are effectively dispersed. Therefore, avalanche effect is decresed, so breakdown voltage characteristic is increased. As a result breakdown characteristics of optimized gate field-plate structure are increased by about 300% compared to those of the standard structure.

Experimental nonlinear vibrations of an MRE sandwich plate

  • Zhang, Jiawei;Yildirim, Tanju;Alici, Gursel;Zhang, Shiwu;Li, Weihua
    • Smart Structures and Systems
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    • v.22 no.1
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    • pp.71-79
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    • 2018
  • The nonlinear vibration analysis of a magneto-rheological elastomer (MRE) sandwich plate is conducted experimentally. Experiments have been performed in order to construct the frequency-response curves in the vicinity of the fundamental natural frequency of an MRE sandwich plate (plate A) in either the absence or presence of a localised external magnetic field at 3 different geometrical locations, for both small and medium magnetic fields. Furthermore, experiments have also been conducted on a pure aluminium plate (plate B) with an equal thickness to the MRE sandwich plate (plate A) in order to examine the influence of the MRE layer on the nonlinear dynamics of the system. An electrodynamic shaker was used to directly force each system and the displacement at the centre of the plate was measured. Meanwhile, permanent magnets were used to apply a localised magnetic field for the experiments where the MRE sandwich plate was subject to an external magnetic field. It was observed all the MRE systems displayed strong hardening-type nonlinear behaviour, however, with increasing magnetic field this behaviour transitioned to a weak hardening-type nonlinearity.

Analytical model for the formation of electric fields in parallel-plate capacitors

  • Taehun Jang;Jungmin Moon;Hye Jin Ha;Sang Ho Sohn
    • Journal of Science Education
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    • v.46 no.2
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    • pp.212-221
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    • 2022
  • In this study, we propose an analytical model to elucidate the formation of electric fields between two parallel conducting plates. Using nine Gaussian surfaces, we investigated the charge redistributions and electric fields formed by parallel conducting plates when two charged plates get close together. The electric charges are redistributed via a new electrostatic equilibrium to create the electric field of each plates. As a result, the electric field start from + electrode plate to - electrode plate via inducing a new electrostatic equilibrium, implying that the application of Gaussian surfaces to only one of the electrodes of parallel-plate capacitors is deserved. The results will help undergraduate students understand the charge redistribution and the electric field formation in parallel-plate capacitors in a reasonable manner.

GaAs Schottky Diode with Taper Field Plate (경사진 Field Plate 구조 GaAs 쇼트키 다이오드)

  • King, Sung-Lyong;Yang, Hoie-Yoon;Choi, Yearn-Ik
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1618-1620
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    • 1997
  • A GaAs schottky diode with taper field plate is proposed to increase breakdown voltage. Breakdown voltage is calculated by device simulator MEDICI. The GaAs schottky diode with taper gate which has $5.7^{\circ}$ taper angle have shown 45% increase in the breakdown voltage compared with conventional field plate GaAs schottky diode.

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A Study on the SOI LDMOS with a Tapered Field Plate (경사진 Field Plate을 갖는 SOI LDMOS에 관한 연구)

  • Na, Jong-Min;Choi, Yearn-Ik
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.367-369
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    • 1995
  • An SOI LDMOS(Silicon-On-Insulator Lateral Double diffused MOSPET) with a tapered field plate is proposed and investigated in terms of the breakdown voltage and on-resistance using 2-D simulator, MEDICI. The results of conventional SOI LDMOS with a stepped field plate are reported for the comparison. Simulated breakdown voltage of the proposed LDMOS is found to be higher than that of conventional LDMOS since surface electric field can be reduced due to the field plate over the tapered oxide. On-resistance of proposed LDMOS is found to be lower than that of conventional LDMOS by 10%.

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A parametric study on buckling loads and tension field stress patterns of steel plate shear walls concerning buckling modes

  • Memarzadeh, P.;Azhari, M.;Saadatpour, M.M.
    • Steel and Composite Structures
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    • v.10 no.1
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    • pp.87-108
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    • 2010
  • A Steel Plate Shear Wall (SPSW) is a lateral load resisting system consisting of an infill plate located within a frame. When buckling occurs in the infill plate of a SPSW, a diagonal tension field is formed through the plate. The study of the tension field behavior regarding the distribution and orientation patterns of principal stresses can be useful, for instance to modify the basic strip model to predict the behavior of SPSW more accurately. This paper investigates the influence of torsional and out-of-plane flexural rigidities of boundary members (i.e. beams and columns) on the buckling coefficient as well as on the distribution and orientation patterns of principal stresses associated with the buckling modes. The linear buckling equations in the sense of von-Karman have been solved in conjunction with various boundary conditions, by using the Ritz method. Also, in this research the effects of symmetric and anti-symmetric buckling modes and complete anchoring of the tension field due to lacking of in-plane bending of the beams as well as the aspect ratio of plate on the behavior of tension field and buckling coefficient have been studied.

Cut out effect on nonlinear post-buckling behavior of FG-CNTRC micro plate subjected to magnetic field via FSDT

  • Jamali, M.;Shojaee, T.;Mohammadi, B.;Kolahchi, R.
    • Advances in nano research
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    • v.7 no.6
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    • pp.405-417
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    • 2019
  • This research is devoted to study post-buckling analysis of functionally graded carbon nanotubes reinforced composite (FG-CNTRC) micro plate with cut out subjected to magnetic field and resting on elastic medium. The basic formulation of plate is based on first order shear deformation theory (FSDT) and the material properties of FG-CNTRCs are presumed to be changed through the thickness direction, and are assumed based on rule of mixture; moreover, nonlocal Eringen's theory is applied to consider the size-dependent effect. It is considered that the system is embedded in elastic medium and subjected to longitudinal magnetic field. Energy approach, domain decomposition and Rayleigh-Ritz methods in conjunction with Newton-Raphson iterative technique are employed to trace the post-buckling paths of FG-CNTRC micro cut out plate. The influence of some important parameters such as small scale effect, cut out dimension, different types of FG distributions of CNTs, volume fraction of CNTs, aspect ratio of plate, magnitude of magnetic field, elastic medium and biaxial load on the post-buckling behavior of system are calculated. With respect to results, it is concluded that the aspect ratio and length of square cut out have negative effect on post-buckling response of micro composite plate. Furthermore, existence of CNTs in system causes improvement in the post-buckling behavior of plate and different distributions of CNTs in plate have diverse response. Meanwhile, nonlocal parameter and biaxial compression load on the plate has negative effect on post-buckling response. In addition, imposing magnetic field increases the post-buckling load of the microstructure.

Study on the Breakdown of the Transformer Insulating Oil in Nonuniform Electric Field (불평등 전계에서 변압기 절연유 절연파괴 연구)

  • Ha-Young Cho;Soon-Hyung Lee;Mi-Yong Hwang;Yong-Sung Choi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.3
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    • pp.280-285
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    • 2023
  • A breakdown voltage and breakdown electric field of the transformer insulating oil of liquid dielectric were studied in uniform electric field and non-uniform electric field and the transformer insulating oil was observed by the process reached breakdown. Insulation performance evaluation of the liquid dielectric was evaluated at the electrode spacing of 2.5 mm under the conditions of domestic and international standards (KS C IEC 60156), so a comparative review was conducted at the electrode spacing of 2.5 mm. When the electrode spacing is 2.5 mm, the average breakdown voltage is 38.5 kV for sphere-sphere electrodes, 26.6 kV for plate-plate electrodes, 22.9 kV for needle-needle electrodes, and 24.3 kV for sphere-needle electrodes. 23.7 kV for the sphere-plate electrode, and 20.7 kV for the needle-plate electrode. From these results, it can be seen that the average value of the breakdown voltage at the electrode spacing of 2.5 mm, in ascending order, is sphere-sphere, plate-plate, sphere-needle, sphere-plate, needle-needle and needle-plate. It was found that the breakdown voltage of the unequal field was lower than that of the equal field.

A Study on the Safety Plan for Usage of the Construction Field Work Plate (건설현장 작업발판의 안전 사용방안에 관한 연구)

  • Go, Seong-Seok;Yeo, Sang-Ku;Choi, Don-Hoeng
    • Journal of the Korean Society of Safety
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    • v.26 no.3
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    • pp.34-42
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    • 2011
  • Death disaster among the disasters in construction field is mainly occurred by crash, and the work plate is the main objects causing crash. This study was performed by interview with workers in construction field to evaluate the consciousness on safety and to analyze the type of use and the state. Finally the problems while using work plate were appeared with its requirements for the improved use. Based on the results from this study, amendments were proposed for some parts of regulation related, and further four types of development on the safe work plate were presented. It is expected that the safer construction environment could be composed by using the results.