• Korean Journal of Clinical Laboratory Science
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• v.37 no.2
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• pp.123-128
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• 2005

Magnetoencephalography (MEG) is the measurement of the magnetic fields produced by electrical activity in the brain, usually conducted externally, using extremely sensitive devices such as Superconducting Quantum Interference Device (SQUID). MEG needs complex and expensive measurement settings. Because the magnetic signals emitted by the brain are on the order of a few femtoteslas (1 fT = 10-15T), shielding from external magnetic signals, including the Earth's magnetic field, is necessary. An appropriate magnetically shielded room is very expensive, and constitutes the bulk of the expense of an MEG system. MEG is a relatively new technique that promises good spatial resolution and extremely high temporal resolution, thus complementing other brain activity measurement techniques such as electroencephalography (EEG), positron emission tomography (PET), single-photon emission computed tomography (SPECT) and functional magnetic resonance imaging (fMRI). MEG combines functional information from magnetic field recordings with structural information from MRI. The clinical uses of MEG are in detecting and localizing epileptic form spiking activity in patients with epilepsy, and in localizing eloquent cortex for surgical planning in patients with brain tumors. Magnetoencephalography may be used alone or together with electroencephalography, for the measurement of spontaneous or evoked activity, and for research or clinical purposes.

• Journal of Korea Society of Industrial Information Systems
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• v.11 no.4
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• pp.66-71
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• 2006

Carbon nanofibers have synthesized a low temperature using DC Ar plasma and Fe-Phthalocyanine, and a characteristic difference of the synthesized CNF according to the location of the substrate was investigated. The carbon nanofibers had about 100nm diameter and up to $10{\mu}m$ length. These were grown in random orientation. There are two shapes in the CNFs, screw and straight line shapes. Furthermore, we found the selective growth of nanofibers on the scratched substrates. The density of CNFs synthesized on the position (a) were higher than that synthesized on the position (b) [See the Fig. 2]. Also, the length of CNFs was different. In the shape, CNFs with screw and straight line shape were synthesized in the position (a), but. only CNFs with straight line shape were synthesized in the position (b). The difference have an important effect on the field emission characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.293-293
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• 2010

Carbon nanotubes (CNTs) have attracted considerable attention as possible routes to device miniaturization due to their excellent mechanical, thermal, and electronic properties. These properties show great potential for devices such as field emission displays, CNT based transistors, and bio-sensors. The metals such as nickel, cobalt, gold, iron, platinum, and palladium are used as the catalysts for the CNT growth. In this study, diamond-like carbon (DLC) was used for CNT growth as a nonmetallic catalyst layer. DLC films were deposited by a radio frequency (RF) plasma-enhanced chemical vapor deposition (RF-PECVD) method with a mixture of methane and hydrogen gases. CNTs were synthesized by a hot filament plasma-enhanced chemical vapor deposition (HF-PECVD) method with ammonia (NH3) as a pretreatment gas and acetylene (C2H2) as a carbon source gas. The grown CNTs and the pretreated DLC filmswere observed using field emission scanning electron microscopy (FE-SEM) measurement, and the structure of the grown CNTs was analyzed by high resolution transmission scanning electron microscopy (HR-TEM). Also, using energy dispersive spectroscopy (EDS) measurement, we confirmed that only the carbon component remained on the substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.377-377
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• 2014

We demonstrate the high temperature-dependent electrical behavior at 2D multilayer MoS2 transistor. Our previous reports explain that the extracted field-effect mobility of good device was inversely proportional to the increase of temperature. Because scattering mechanism is dominated by phonon scattering at a well-designed MoS2 transistor, having, low Schottky barrier. However, mobility at an immature our $MoS_2$ transistor (${\mu}m$ < $10cm^2V^{-1}s^{-1}$) is proportional to the increase temperature. The existence of a big Schottky barrier at $MoS_2-Ti$ junction can reduce carrier transport and lead to lower transistor conductance. At high temperature (380K), the field-effect mobility of multilayer $MoS_2$ transistor increases from 8.93 to $16.9cm^2V^{-1}sec^{-1}$, which is 2 times higher than the value at room temperature. These results demonstrate that carrier transport at an immature $MoS_2$ with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier at high temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.321-326
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• 2021

We fabricated BiAlO thin film by a solution process with a brush coating to be used as liquid crystal (LC) alignment layer. Solution-processed BiAlO was coated on the glass substrate by brush process. Prepared thin films were annealed at different temperatures of 80℃, 180℃, and 280℃. To verify whether the BiAlO film was formed properly, X-ray photoelectron spectroscopy analysis was performed on Bi and Al. Using a crystal rotation method by polarized optical microscopy, LC alignment state was evaluated. At the annealing temperature of 280℃, the uniform homogenous LC alignment was achieved. To reveal the mechanism of LC alignment by brush coating, field emission scanning electron microscope was used. Through this analysis, spin-coated and brush coated film surface were compared. It was revealed that physical anisotropy was induced by brush coating at a high annealing temperature. Particles were aligned in one direction along which brush coating was made, resulting in a physical anisotropy that affects a uniform LC alignment. Therefore, it was confirmed that brush coating combined with BiAlO thin film annealed at high temperature has a significant potential for LC alignment.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.155-163
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• 2011

Carbon nanotubes (CNT) have been attracted much attention since they have been expected to be used in various areas by virtue of their outstanding physical, electrical, and chemical properties. In order to make full use of their prominent electric conductivity in some areas such as electron emission sources, device interconnects, and electrodes in energy storage devices, direct growth of CNT with vertical alignment is definitely beneficial issue because they can maintain mechanical stability and high conductivity at the interface between substrates. Here, we report direct growth of vertically aligned CNT (VCNT) on Cu foils using thermal chemical vapor deposition and characterize the field emission property of the VCNT. The VCNT's height was controlled by changing the growth temperature, growth time, and catalytic layer thickness. Optimum growth condition was found to be $800^{\circ}C$ for 20 min with acetylene and hydrogen mixtures on Fe catalytic layer of 1 nm thick. The diameter of VCNT grown was smaller than that of usual multi walled CNT. Based on the result of field emission characterization, we concluded that the VCNT on Cu foils can be useful in various potential applications where high conductivity through the interface between CNT and substrate is required.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.183-191
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• 2017

In this study, surface morphology and mechanical property of TiN and DLC coated pedicle screw have been investigated by field-emission scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, vickers hardness test, axial gripping, and axial torsional gripping capacity test. From the EDS and XRD results, the composition and crystal structure of TiN and DLC coated surface were verified. The hardness value was increased by TIN and DLC coating, and the DLC coating surface has the highest value. The gripping capacity also showed higher value for TiN and DLC coated specimen than that of non-coated (Ti alloy) surface. The surface morphology of gripping tested specimen showed rougher scratched surface from Ti alloy than TiN and DLC coated layer.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1226-1227
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• 2008

In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.

• Transactions of the Society of Information Storage Systems
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• v.10 no.2
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• pp.32-38
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• 2014

Heat emission from the laser diode used in the optical disc drive and the defects from the increased temperature at the system have attracted attentions from the field of the information storage device. Thermoelectric refrigerator is one of the fine solutions to solve these thermal problems. The refrigeration performance of thermoelectric device is dependent on the thermoelectric material's figure-of-merit. Meanwhile, high electrical contact resistivity between metal electrode and p- and n-type thermoelectric materials in the device would lead increased total electrical resistance resulting in the degeneracy in performance. This paper represents the manufacturing process of the PbTe-based material which has one of the highest figure-of-merit at medium-high-temperature, ~ 600K to 900 K, and the nickel contact layer for reduced electrical contact resistance at once, and the results showing the decent contact structure and figure-of-merit even after the long-term operation environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.303-306
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• 1998

Electroluminescence is occurred when phosphor is located in electric field. Object of this research show powder electroluminescent device (PELD) for high brightness compared with conventional PELD. Single layer of PELD structured as follow (ITO/phosphor + dielectric/silver paste). To investigate optical properties of PELDS, EL spectrum, CIE coordinate system, Brightness of PELDs was measured. The suitable ratio between phosphor and dielectric in single layer of PELD was 7:3(phosphor: dielectric). At 200 V4OO Hz, high performance of PELD which had ratio of 7:3