• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.50-53
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• 2001

In this study, gate leakage current mechanism has been analyzed for GaAs MESFET with different temperatures ranging from 27$^{\circ}C$ to 300$^{\circ}C$ . It is expected that the thermionic and field emission at the MS contact will dominate the current flow. Thermal cycle is applied to test the reliability of the device. From the results, it is proved that thermal stress gradually increases the gate leakage current at the same bias conditions and leads to the breakdown and failure mechanism which is critical in the field equipment. Finally the gate contact under the repeated thermal shock has been tested to check the quality of Schottky barrier and the current will be expressed in the analytical from to associate with the electrical characteristics of the device.

• 마이크로전자및패키징학회지
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• 제6권1호
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• pp.65-73
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• 1999

Lift-off 공정에 의하여 Si-tip FEA를 제조하고 그 동작 특성을 평가하였다. 게이트 및 양극 전압에 따른 방출 전류의 변화, 최대 방출 전류, 히스테리시스 현상, MOSFET형 특성, 전류 표동, 방출된 전자에 의한 형광체 발광, 그리고 소자의 파괴 메카니즘 등이 실험 결과를 토대로 하여 폭 넓게 평가, 분석되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.147-150
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• 1998

Since P-ELD(powders type electroluminescent device) phenomena were found by G.Destriau at first In 1936, lots of studying was performed in order to realize surface emission devices and flat panel display as a backlight. Due to the problem of low luminance and color and so on, it was delayed. Recently using electric field and thermal effect which can change it\`s molecular arrangement, it can be developed using photoelectric properties of P-ELD. P-ELD in this study was prepared by casting method. Basic structure is ITO/Phosphor/insulator/Al sheet, each layer was mixed by binder, which concentration 11p(poise) for phosphor, 8p(poise) fort insulator. Dielectric properties was investigated first and emission properties of P-ELD based on ZnS:Mn,Cu/ZnS:Cu,Br mixture. P-ELD prepared in this work exhibits about 100cd/㎡ 1-kHz simusoidal excitation.

• 센서학회지
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• 제9권3호
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• pp.182-189
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• 2000

미소 공간 내의 진공도를 측정하기 위하여 마이크로 진공 센서를 제작하였다. 동작 원리로서 전계 방출 전류가 진공도에 의존한다는 점을 이용하였고, 이를 위해 측면형 실리콘 전계 방출 소자를 제작하였다. 음극과 게이트, 그리고 양극을 분리하기 위하여 표면 미세가공을 이용하였으며, 제작된 소자는 $10^{-5}{\sim}10^{-8}\;Torr$ 범위의 진공도에서 $1.20{\sim}2.42\;{\mu}A$ 범위의 방출 전류 변화를 보였다.

• Fibers and Polymers
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• 제1권1호
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• pp.25-31
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• 2000

Poly(3-hexyl thiophene)(P3HT) and poly(3-dodecyl thiophene)(P3DT) were polymerized by oxidative coupling with ferric chloride. The P3HT light-emitting device emitted red light and it could be observable in the ordinary indoor light. The device had the turn-on electric field of about 3$\times$$10^7$ V/m. The maximum electroluminescene (EL) intensity was obtained when the thickness of polymer layer was about 130 nm in IT0/P3HT/Al device. The maximum external quantum yield was 0.002%. The maximum luminance was 21 cd/$m^2$. The EL intensity decreases with increasing the crystallinity of the polymer layer. By using the oriented poly(3-alkyl thiophene)(PAT) layer as an electroluminescent layer in the ITO/polymer/Al light-emitting devices, the polarized EL light emission was observed. The EL intensity ratio of parallel to perpendicular direction to the stretch direction for P3HT was about 1.40.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.41-45
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology and successive in-situ photocathode vacuum device fabrication carried out in a process chamber. Performance testing of the device was followed. Light emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The luminescent characteristics of the devices were investigated by measuring the optical parameters as functions of the applied anode voltages. The results showed that this approach could produce a more easily directed and controlled stream of light. These features make these devices suitable for a variety of planar lighting applications.

• 한국재료학회지
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• 제13권5호
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• pp.333-337
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• 2003

We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{－1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.

• 전기화학회지
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• 제1권1호
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• pp.24-27
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• 1998

Electroluminescence (EL) comes from the light emission obtained by the electrical excitation energy passing through a phosphor layer undo. an applied high electrical field $(10^6 V/cm)$. The preparation of white and blue phosphors and characterizations of light emitting alternating current powder electroluminescent devices (ACPELDs) were investigated. In this work, we fabricated two kinds of ELDs, that is, yellow electroluminescent device (B-ELD), blue electroluminescent device (B-ELD). The basic st.uctures of Y-ELD and B-ELD are ITO (Indium Tin Oxide)/phosphor layer/Insulator layer/Carbon electrode and ITO/Phosphor layer/Insulating layer/carbon electrode, respectively. Another structures of ITO/Phosphor and Insulator mixture layer/Backelectrode are introduced. EL spectra and luminance of two types of ELDs were measured by changing voltage at fixed frequency 0.4kHz, 1.5kHz. Blue and yellow phosphors prepared in this work show $50cd/m^2\;and\;30cd/m^2$ of luminance at 400Hz, 150V.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.321-321
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• 2005

• Journal of Information Display
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• 제10권4호
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• pp.143-148
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• 2009

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.