• 한국재료학회지
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• 제20권9호
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• pp.483-487
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• 2010

To fabricate $TiO_2$ nanoparticle-based dye sensitized solar cells (DSSCs) at a low-temperature, DSSCs were fabricated using hydropolymer and ZnO nanoparticles composites for the electron transport layer around a low-temperature ($200^{\circ}C$). ZnO nanoparticle with 20 nm and 60 nm diameter were used and Pt was deposited as a counter electrode on ITO/glass using an RF magnetron sputtering. We investigate the effect of ZnO nanoparticle concentration in hydropolymer and ZnO nanoparticle solution on the photoconversion performance of the low temperature fabricated ($200^{\circ}C$) DSSCs. Using cis-bis(isothiocyanato)bis(2,20 bipyridy1-4,40 dicarboxylato) ruthenium (II) bis-tetrabutylammonium (N719) dye as a sensitizer, the corresponding device performance and photo-physical characteristics are investigated through conventional physical characterization techniques. The effect of thickness of the ZnO photoelectrode and the morphology of the ZnO nanoparticles with the variations of hydropolymer to ZnO ratio on the photoconversion performance are also investigated. The morphology of the ZnO layer after sintering was examined using a field emission scanning electron microscope (FE-SEM). 60 nm ZnO nanoparticle DSSCs showed an incident photon-to-current conversion efficiency (IPCE) value of about 7% higher than that of 20 nm ZnO nanoparticle DSSCs. The maximum parameters of the short circuit current density ($J_{sc}$), the open circuit potential ($V_{oc}$), fill factor (ff), and efficiency ($\eta$) in the 60 nm ZnO nanoparticle-based DSSC devices were 4.93 mA/$cm^2$, 0.56V, 0.40, and 1.12%, respectively.

• 마이크로전자및패키징학회지
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• 제19권4호
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• pp.79-83
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• 2012

신뢰성이 우수하며, 소형화가 가능하고, 우수한 열전도도의 은 전극을 이용할 수 있는 LTCC (Low temperature co-fired ceramic) 패키징은 환경 및 열에 약한 플라스틱 패키징을 대체할 것으로 기대받고 있다. 현재 LTCC 패키징의 원료 분말로는 주로 $Al_2O_3$을 사용하는데, 본 연구에서는 $Al_2O_3$보다 열전도도가 2배 우수한 ZnO을 일부 첨가 또는 대체한 조성 변화를 통하여 패키징의 열 특성 변화에 대해 연구하였다. 소량의 ZnO를 첨가하여 열전도도가 최대 25%까지 상승하는 결과가 나타났으며, 이 결과로 LED 수명이 증가할 것으로 예상된다. ANSYS 시뮬레이션 결과 열 유속의 값이 ZnO가 첨가된 경우 최대 56% 증가함을 확인할 수 있었다. 실제 LED 패키징을 제작하여 측정한 결과도 ZnO를 첨가한 LTCC 패키징은 $Al_2O_3$로만 이루어진 패키징보다 열저항이 최대 14.9% 감소하였다.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2002년도 Proceedings
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• pp.396-399
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• 2002

Intense quasi-monochromatic x-ray irradiation from the linear plasma target is described. The plasma x-ray generator employs a high-voltage power supply, a low-impedance coaxial transmission line, a high-voltage condenser with a capacity of about 200 nF, a turbo-molecular pump, a thyristor pulse generator as a trigger device, and a flash x-ray tube. The high-voltage main condenser is charged up to 55 kV by the power supply, and the electric charges in the condenser are discharged to the tube after triggering the cathode electrode. The x-ray tube is of a demountable triode that is connected to the turbo molecular pump with a pressure of approximately 1 mPa. As electron flows from the cathode electrode are roughly converged to the molybdenum target by the electric field in the tube, the weakly ionized plasma, which consists of metal ions and electrons, forms by the target evaporating. In the present work, the peak tube voltage was almost equal to the initial charging voltage of the main condenser, and the peak current was about 20 kA with a charging voltage of 55 kV. When the charging voltage was increased, the linear plasma x-ray source grew, and the characteristic x-ray intensities of K-series lines increased. The quite sharp lines such as hard x-ray lasers were clearly observed. The quasi-monochromatic radiography was performed by a new film-less computed radiography system.

• Bulletin of the Korean Chemical Society
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• 제35권8호
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• pp.2505-2511
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• 2014

Indium oxide nanocrystals ($In_2O_3$ NCs) with sizes of 5.5 nm-10 nm were synthesized by hot injection of the mixture precursors, indium acetate and oleic acid, into alcohol solution (1-octadecanol and 1-octadecence mixture). Field emission transmission electron microscopy (FE-TEM), High resolution X-Ray diffraction (X-ray), Nuclear magnetic resonance (NMR), and Fourier transform infrared spectroscopy (FT-IR) were employed to investigate the size, surface molecular structure, and crystallinity of the synthesized $In_2O_3$ NCs. When covered by oleic acid as a capping group, the $In_2O_3$ NCs had a high crystallinity with a cubic structure, demonstrating a narrow size distribution. A high mobility of $2.51cm^2/V{\cdot}s$ and an on/off current ratio of about $1.0{\times}10^3$ were observed with an $In_2O_3$ NCs thin film transistor (TFT) device, where the channel layer of $In_2O_3$ NCs thin films were formed by a solution process of spin coating, cured at a relatively low temperature, $350^{\circ}C$. A size-dependent, non-monotonic trend on electron mobility was distinctly observed: the electron mobility increased from $0.43cm^2/V{\cdot}s$ for NCs with a 5.5 nm diameter to $2.51cm^2/V{\cdot}s$ for NCs with a diameter of 7.1 nm, and then decreased for NCs larger than 7.1 nm. This phenomenon is clearly explained by the combination of a smaller number of hops, a decrease in charging energy, and a decrease in electronic coupling with the increasing NC size, where the crossover diameter is estimated to be 7.1 nm. The decrease in electronic coupling proved to be the decisive factor giving rise to the decrease in the mobility associated with increasing size in the larger NCs above the crossover diameter.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.429.2-429.2
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• 2014

ZnO nanowire is known as synthesizable and good mechanical properties. And, stimuli-responsive polymer is widely used in the application of tunable sensing device. So, we combined these characteristics to make precise tunable sensing devise. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using nanosphere template with various conditions via hydrothermal process. Also, pH-temperature dependant tuning ability of nanostructure was studied. The brief experimental scheme is as follow. First, Zno seed layer was coated on a si wafer ($20{\times}20mm$) by spin coater. And then $1.15{\mu}m$ sized close-packed PS nanospheres were formed on a cleaned si substrate by using gas-liquid-solid interfacial self-assembly method. After that, zinc oxide nanowires were synthesized using hydrothermal method. Before the wire growth, to specify the growth site, heat treatment was performed. Finally, NIPAM(N-Isopropylacrylamide) was coated onto as-fabricated nanostructure and irradiated by UV light to form the PNIPAM network. The morphology, structures and optical properties are investigated by FE-SEM(Field Emission Scanning electron Microscopy), XRD(X-ray diffraction), OM(Optical microscopy), and WCA(water contact angle).

• 한국재료학회지
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• 제23권6호
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• pp.299-303
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• 2013

In this study, a micro gas sensor for $NO_x$ was fabricated using a microelectromechanical system (MEMS) technology and sol-gel process. The membrane and micro heater of the sensor platform were fabricated by a standard MEMS and CMOS technology with minor changes. The sensing electrode and micro heater were designed to have a co-planar structure with a Pt thin film layer. The size of the gas sensor device was about $2mm{\times}2mm$. Indium oxide as a sensing material for the $NO_x$ gas was synthesized by a sol-gel process. The particle size of synthesized $In_2O_3$ was identified as about 50 nm by field emission scanning electron microscopy (FE-SEM). The maximum gas sensitivity of indium oxide, as measured in terms of the relative resistance ($R_s=R_{gas}/R_{air}$), occurred at $300^{\circ}C$ with a value of 8.0 at 1 ppm $NO_2$ gas. The response and recovery times were within 60 seconds and 2 min, respectively. The sensing properties of the $NO_2$ gas showed good linear behavior with an increase of gas concentration. This study confirms that a MEMS-based gas sensor is a potential candidate as an automobile gas sensor with many advantages: small dimension, high sensitivity, short response time and low power consumption.

• 한국분말재료학회지
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• 제17권4호
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• pp.319-325
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• 2010

Electrical discharge machining (EDM) is an attractive machining technique but it requires electrically conductive ceramic materials. In this study, Alumina matrix composites reinforced with CNTs were fabricated through CNT purification, mixing, compaction and spark plasma sintering (SPS) processes. $Al_2O_3$ nanocomposites with the different CNT concentrations were synthesized. The mechanical and electrical characteristics of $Al_2O_3$/CNTs composites were examined in order to apply the materials to the EDM process. In addition, micro-EDM using wire electrical discharge grinding (WEDG) was conducted under the various EDM parameters to investigate the machining characteristics of machined hole by Field Emission Scanning Electron Microscope (FE-SEM). The results show that $Al_2O_3$/CNTs 10%Vol. was more suitable than the other materials because high conductivity and large discharge energy caused violent sparks resulting in bad machining accuracy and surface quality.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.6-6
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• 2010

Indium Tin Oxide (ITO)를 포함한 Transparent Conduction Oxide (TCO)는 LCD, OLED와 같은 Display, 그리고 Solar Cell 등 광신호와 전기신호간 변환이 필요한 모든 Device에 반드시 필요한 핵심 물질로, 특히 고특성 Display의 투명전극에서 요청되는 95% 이상의 투과도와 $15\;{\Omega}/{\square}$ 이하의 면저항 특성을 동시에 만족할 수 있는 기술은 현재까지 Plasma Sputtering 공정으로 $160^{\circ}C$ 이상에서 증착된 ITO 박막이 유일하다. 그러나, 최근 차세대 기술로서 Plastic Film을 기반으로 하는 Flexible Display 및 Flexible Solar Cell 구현에 대한 요구가 급증하면서, Plastic Film 기판위에 Plasma Damage이 없이 상온에 가까운 저온 ($100^{\circ}C$ 이하)에서 특성이 우수한 ITO 투명전극을 형성 할 수 있는 기술의 확보가 중요한 현안이 되고 있다. 지난 10년 동안 $100^{\circ}C$이하 저온에서 고특성의 ITO 또는 TCO 박막을 얻기위한 다양한 연구와 구체적인 공정이 활발히 연구되어 왔으나, ITO의 결정화 온도 (통상 $150{\sim}180^{\circ}C$)이하에서 증착된 ITO박막은 비정질 상태의 물성적 특성을 보여 원하는 전기적, 광학적 특성확보가 어려웠다. 본 논문에선 기본적으로 절연체 특성을 가져야 하는 산화물인 TCO가 반도체 또는 도체의 물리적 특성을 보여주는 기본원리의 고찰을 토대로, 재료학적 특성상 Crystalline 구조를 보여야 하는 ITO (Complex Cubic Bixbyte Structure)가 Plasma Sputtering 공정으로 저온에서 증착될 때 비정질 구조를 갖게 되는 원인을 규명하고, 이를 바탕으로 저온에서 증착된 ITO가 Crystalline 구조를 유지 할 수 있게 하고, Stress Control에 유리한 Nano-Crystalline 박막을 형성하면서 Crystallinity를 임의로 조절 할 수 있는 새로운 기술인 Magnetic Field Shielding Sputtering (MFSS) 공정과 최근 성과를 소개한다. 한편, 또 다른 새로운 저온 TCO 박막형성 기술로서, 유기반도체와 같은 Process Damage에 매우 취약한 유기물 위에 Plasma Damage 없이 TCO 박막을 직접 형성할 수 있는 Neutral Beam Assisted Sputtering (NBAS) 기술의 원리를 설명하고, 본 공정을 적용한 Top Emission OLED 소자의 결과를 소개한다. 또한, 고온공정이 수반되는 Solar Cell용 투명전극의 경우, 통상의 TCO박막이 고온공정을 거치면서 전기적 특성이 열화되는 원인을 규명하고, 이에 대한 근본적 해결 방법으로 ITO 박막의 Dopant인 Tin (Sn) 원자의 활성화를 증가시킨 Inductively Coupled Plasma Assisted DC Magnetron Sputtering (ICPDMS)의 원리와 박막의 물성적 특성과 내열 특성을 소개한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.