• 제목/요약/키워드: Field emission device

검색결과 178건 처리시간 0.026초

Surface Emitting Terahertz Transistor Based on Charge Plasma Oscillation

  • Kumar, Mirgender;Park, Si-Hyun
    • Current Optics and Photonics
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    • 제1권5호
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    • pp.544-550
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    • 2017
  • This simulation based study reports a novel tunable, compact, room temperature terahertz (THz) transistor source, operated on the concept of charge plasma oscillation with the capability of radiating within a terahertz gap. A vertical cavity with a quasi-periodic distributed-Bragg-reflector has been attached to a THz plasma wave transistor to achieve a monochromatic coherent surface emission for single as well as multi-color operation. The resonance frequency has been tuned from 0.5 to 1.5 THz with the variable quality factor of the optical cavity from 5 to 290 and slope efficiency maximized to 11. The proposed surface emitting terahertz transistor is able to satisfy the demand for compact solid state terahertz sources in the field of teratronics. The proposed device can be integrated with Si CMOS technology and has opened the way towards the development of silicon photonics.

Fabrication of PZT Tubular Structures by a Template-wetting Process

  • Shaislamov, U.A.;Hong, S.K.;Yang, B.
    • 한국세라믹학회지
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    • 제44권5호
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    • pp.141-143
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    • 2007
  • Nanotubes and microtubes of ferroelectric lead zirconate titanate (PZT) were synthesized by means of a simple and convenient process called a template-wetting process. Nanoporous alumina and macroporous Si were used as template materials to fabricate the corresponding tubes. For the improvement of the wetting properties of the wetting solution, the PZT solution was mixed with a polymer. The polymer was removed completely during annealing. The grain growth processes of the PZT nanotubes during baking and furnace annealing were examined by means of field emission electron microscope (FE-SEM) and X-ray diffractometry (XRD).

Fabrication of Nanopatterns by Using Diblock Copolymer

  • KANG GIL BUM;KIM SEONa-IL;KIM YONG TAE;KIM YOUNG HHAN;PARK MIN CHUL;KIM SANG JIN;LEE CHANG WOO
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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    • pp.183-187
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    • 2005
  • Thin films of diblock copolymers may be suitable for semiconductor device applications since they enable patterning of ordered domains with dimensions below photolithographic resolution over wafer-scale area. We obtained nanometer-scale cylindrical structure of dibock copolymer of polystyrene-block-poly(methylmethacrylate), PS-b-PMMA, also demonstrate pattern transfer of the nanoporous polymer using both reactive ion etching. The size of fabricated naonoholes were about 10 nm. Fabricated nanopattern surface was observed by field emission scanning electron microscope (FESEM).

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Simulation Study on Measuring Pulverized Coal Concentration in Power Plant Boiler

  • Chen, Lijun;Wang, Yang;Su, Cheng
    • Journal of Information Processing Systems
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    • 제15권1호
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    • pp.189-202
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    • 2019
  • During thermal power coal-fired boiler operation, it is very important to detect the pulverized coal concentration in the air pipeline for the boiler combustion stability and economic security. Because the current measurement methods used by power plants are often involved with large measurement errors and unable to monitor the pulverized coal concentration in real-time, a new method is needed. In this paper, a new method based on microwave circular waveguide is presented. High Frequency Electromagnetic Simulation (HFSS) software was used to construct a simulation model for measuring pulverized coal concentration in power plant pipeline. Theoretical analysis and simulation experiments were done to find the effective microwave emission frequency, installation angle, the type of antenna probe, antenna installation distance and other important parameters. Finally, field experiment in Jilin Thermal Power Plant proved that with selected parameters, the measuring device accurately reflected the changes in the concentration of pulverized coal.

VOC Analyzer를 이용한 파티클보드로부터 방산되는 휘발성유기화합물의 간이 측정방법 개발 (Development of Simple Test Method using VOC Analyzer to Measure Volatile Organic Compounds Emission for Particleboards)

  • 안재윤;김수민;김진아;김현중;문석중
    • Journal of the Korean Wood Science and Technology
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    • 제34권4호
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    • pp.22-30
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    • 2006
  • VOC Analyzer는 톨루엔, 에틸벤젠, 자일렌, 스틸렌 등 4가지 방향족 탄화수소 가스를 측정하기 위한 휴대용 장비이다. VOC Analyzer는 반도체 가스 센서가 존재하는데 이 센서는 가스크로마토그래프에 필요했던 캐리어 가스를 필요 없게 하였다. 게다가 반도체 가스 센서는 가스 성분에 대해 초고감도이기 때문에 전형적인 가스 포집기나 복잡한 장비가 필요 없다. 다른 측정방법과 비교하면 VOC Analyzer는 실험의 반복과 결과의 도출이 용이하기 때문에 건축자재에서 톨루엔, 에틸벤젠, 자이렌, 스티렌을 측정하는데 유용하다. VOC Analyzer는 기본적 공기 중의 4가지 VOC를 측정하는 것인데, 본 연구에서 재료, 파티클보드에서 방산되는 VOC를 분석하는 방법을 고안하였다. 시편을 밀봉하여 96시간 후에 측정할 때 최대 VOC 값, 즉 안정화 된 VOC 방산량을 측정할 수 있다. 건축자재의 TVOC 방산을 측정 시 다른 방법에 비해 쉽고, 빠르며 경제적인 시험 방법이라 VOC Analyzer를 이용한 시험 방법을 개발하였다. VOC Analyzer는 건축 자재로부터 방산되는 VOC에 대해 빠른 측정과 쉬운 시험방법이 요구되는 곳에 널이 사용 될 것이라 기대한다. 더욱이 VOC Analyzer는 현재에 사용되고 있는 표준 방법 보다 더 쉽고, 빠르고, 경제적인 기술로의 적용이 가능하였다.

전계 방출 소자용으로 제조한 단결정 실리콘 기판에 증착된 실리콘 질화막에 대한 특성 연구 (Characteristics of $SiN_x$ films on wet-etched Si for field emission device)

  • 정재훈;주병권;이윤희;오명환;장진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1137-1139
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    • 1995
  • $SiN_x$ films deposited on bare Si and wet-etched Si by RPCVD were fabricated to investigated the effect of wet-etched surface of Si on the characteristics of the interface between $SiN_x$ and Si. FT-IR spectra on each film showed similar characteristics. However, it was confirmed that the electric characteristics(I-V, C-V) of the interface between $SiN_x$ and Si have been degraded by the wet etching process of Si, which is applied for the formation of Si field emitter array. Therefore, we suggest that the stacked structure of insulating layer with good interface characteristics is desirable for FED application.

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다이오드형 실리콘 전계방출소자의 제작 및 특성평가 (Fabrication and Characterization of Diode-Type Si Field Emitter Array)

  • 박흥우;주병권;김성진;정재훈;박정호;오명환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1440-1441
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    • 1995
  • We fabricated diode-type silicon field emitter array device and tested the current-voltage characteristics. Silicon oxide layer having the thickness of $1{\mu}m$ is grown in the (100) oriented n-type silicon substrates. Oxide layer is patterned by the mask with $10{\mu}m$ diameter circles. Silicon substrate is then etched using NAF 1 solution to form the sharp tip arrays as an electron source. In the UHV test station, we tested the current-voltage characteristics for the samples. Turn-on voltage was about 140V and maximum emission current was $310{\mu}A$ at 164V. We studied about silicon bonding process for future work, too.

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PEDOT 기상중합 원단을 이용한 멀티 레이어 압력 센서 개발 (Development of Multi-layer Pressure Sensor using PEDOT Vapor Phase Polymerization)

  • 임승주;배종혁;장성진;임지영;박근혜;고재훈
    • 센서학회지
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    • 제27권3호
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    • pp.186-191
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    • 2018
  • Smart textile industries have been precipitously developed and extended to electronic textiles and wearable devices in recent years. In particular, owing to an increasingly aging society, the elderly healthcare field has been highlighted in the smart device industries, and pressure sensors can be utilized in various elderly healthcare products such as flooring, mattress, and vital-sign measuring devices. Furthermore, elderly healthcare products need to be more lightweight and flexible. To fulfill those needs, textile-based pressure sensors is considered to be an attractive solution. In this research, to apply a textile to the second layer using a pressure sensing device, a novel type of conductive textile was fabricated using vapor phase polymerization of poly(3,4-ethylenedioxythiophene) (PEDOT). Vapor phase polymerization is suitable for preparing the conductive textile because the reaction can be controlled simply under various conditions and does not need high-temperature processing. The morphology of the obtained PEDOT-conductive textile was observed through the Field Emission Scanning Electron Microscope (FESEM). Moreover, the resistance was measured using an ohmmeter and was confirmed to be adjustable to various resistance ranges depending on the concentration of the oxidant solution and polymerization conditions. A 3-layer 81-point multi-pressure sensor was fabricated using the PEDOT-conductive textile prepared herein. A 3D-viewer program was developed to evaluate the sensitivity and multi-pressure recognition of the textile-based multi-pressure sensor. Finally, we confirmed the possibility that PEDOT-conductive textiles could be utilized by pressure sensors.

광감제가 코팅된 자성유체의 제조와 광역학 치료용 장치의 구성 (Preparation of Photosensitizer-Coated Ferrofluids and Fabrication of a Device for Photodynamic Therapy)

  • 권순광;김종오;김종희
    • 한국재료학회지
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    • 제12권3호
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    • pp.215-219
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    • 2002
  • For the purpose of annihilating tumor in body, hematoporphyrin as a photosensitizer was coated onto magnetic particles of $Fe_3O_4$ prepared by coprecipitation which could be concentrated around the tumor by magnetic field. The photosensitizer was applied differently before, during and after adsorbing the 1st surfactant on the particles. Its added amount was $5{\times}10^{-4}/mol$, and the coating reaction proceeded at temperatures of 60, 70 and 8$0^{\circ}C$. The amounts of photosensitizer coated on the magnetic particles were obtained by calculating an optical density with the maximum UV spectrum. As a result of the UV analysis, the coating amount of photosensitizer increased with higher reaction temperatures. When applied at 8$0^{\circ}C$ after adsorbing the 1st surfactant, the photosensitizer was coated with a maximum value of $3.8{\times}10^{-3}/mo1/$\ell$$. The TGA analysis revealed that the ferrofluids included the particles of 30.115 g/$\ell$. It was suggested that the magnetite particles was coated with photosensitizer of $1.26{\times}10^{-4}/mo1/g$. A small-sized device for magnetic field and light emission was designed, in which LED sheets coverts the permanent magnet of Nd-Fe-B. The LED sheet was connected in series circuit and also protected with a silicon tube. The power was supplied with rechargable battery of 9V and 100-120mA.

Metal tip FEA 의 제조시 식각 용액이 게이트 산화막에 미치는 영향 (The effect of wet-etching process on the gate insulator for fabrication of metal tip FEA)

  • 정유호;정재호;박흥우;송만호;이윤희;주병권;오명환;김철주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1450-1452
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    • 1996
  • In order to optimize the characteristics of gate insulator for FED(field emission device), we investigated the effect of wet-etching process on the gate insulator for fabrication of FED. We used the general three types of etchants for fabrication of the metal tip FEA(field emitter array), they are MO and oxide etchants to form the gate hole, and Al etchant to remove the release layer. In the result of the breakdown field of the insulator by the measure of the current-voltage characteristics, the breakdown field of insulator for immersing in oxide etchant was rapidly lowering with increasing etching time, but that for immersing in Al etchant was slow lowering. Also, in comparing cleaning with non-cleaning samples, the breakdown field of the cleaning samples was higher than that of non-cleaning samples.

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