• Title/Summary/Keyword: Field effect

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The Effect of Vibration during Welding on the Fatigue Strength of Weldment (용접중 진동이 용접재의 피로강도에 미치는 영향)

  • Lee Jin Hyeong;Jang Gyeong Ho;Sin Yeong Ui;Jeon Jun Tae;Lee Dae Hyeong;Choe Myeong Gi
    • Proceedings of the KWS Conference
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    • v.43
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    • pp.153-155
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    • 2004
  • Vibration occurs due to the wind and vehicles, etc., in the field welded joints of steel bridges. However, the effect of vibration on the fatigue strength of field welded joints in steel bridge are not yet clearly understood. In this paper, the effect of vibration on the fatigue strength of welded joints was elucidated in order to improve reliability in the field welded joints of steel bridge. The base material used in this investigation was SM 490A steel of weldable grade. Flux Cored Arc Welding(FCAW) process was used to fabricate the doubte 'V' butt joints. Welding was performed on the steel under the mechanical vibration of given frequency. The applied frequency was resonant frequency. Also, weldments formed under no vibration were fabricated. Fatigue tests were conducted using a servo hydraulic controlled 50ton1 capacity UTM with a frequency of 5Hz under constant amplitude loading.

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Controllability of Threshold Voltage of ZnO Nanowire Field Effect Transistors by Manipulating Nanowire Diameter by Varying the Catalyst Thickness

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.3
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    • pp.156-159
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    • 2013
  • The electrical properties of ZnO nanowire field effect transistors (FETs) have been investigated depending on various diameters of nanowires. The ZnO nanowires were synthesized with an Au catalyst on c-plane $Al_2O_3$ substrates using hot-walled pulsed laser deposition (HW-PLD). The nanowire FETs are fabricated by conventional photo-lithography. The diameter of ZnO nanowires is simply controlled by changing the thickness of the Au catalyst metal, which is confirmed by FE-SEM. It has been clearly observed that the ZnO nanowires showed different diameters simply depending on the thickness of the Au catalyst. As the diameter of ZnO nanowires increased, the threshold voltage of ZnO nanowires shifted to the negative direction systematically. The results are attributed to the difference of conductive layer in the nanowires with different diameters of nanowires, which is simply controlled by changing the catalyst thickness. The results show the possibility for the simple method of the fabrication of nanowire logic circuits using enhanced and depleted mode.

A Study on the Dispersion of Fuel Particles in the Homogeneous Turbulent Flow Field (균일 난류 유동장내에서 연료입자의 퍼짐에 관한 연구)

  • 김덕줄;최연우
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.18 no.5
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    • pp.1330-1337
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    • 1994
  • This study is to predict the lateral dispersion of the particles with time in a vertical pipe. Particle is released downward and located in the center of a pipe through which stationary, homogeneous turbulent air is flowing. We assume that gas turbulence velocities have a Gaussian probability density distribution and the presence of particle is not to alter turbulent structures. Particle trajectory is computed by numerically integrating the particle Lagrangian equation of motion, with a random sampling to determine the fluctuating air velocity experienced by each particle, which considered inertia effect and crossing-trajectories effect. The result shows characterestics of particle dispersion according to flow field condition and droplet size by using the parameters and scales, which expressed characterestics of flow field and particle. Predictions agree reasonably with experimental data.

Effect of electromagnetic field exposure on the reproductive system

  • Gye, Myung-Chan;Park, Chan-Jin
    • Clinical and Experimental Reproductive Medicine
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    • v.39 no.1
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    • pp.1-9
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    • 2012
  • The safety of human exposure to an ever-increasing number and diversity of electromagnetic field (EMF) sources both at work and at home has become a public health issue. To date, many in vivo and in vitro studies have revealed that EMF exposure can alter cellular homeostasis, endocrine function, reproductive function, and fetal development in animal systems. Reproductive parameters reported to be altered by EMF exposure include male germ cell death, the estrous cycle, reproductive endocrine hormones, reproductive organ weights, sperm motility, early embryonic development, and pregnancy success. At the cellular level, an increase in free radicals and $[Ca^{2+}]i$ may mediate the effect of EMFs and lead to cell growth inhibition, protein misfolding, and DNA breaks. The effect of EMF exposure on reproductive function differs according to frequency and wave, strength (energy), and duration of exposure. In the present review, the effects of EMFs on reproductive function are summarized according to the types of EMF, wave type, strength, and duration of exposure at cellular and organism levels.

Observation of bubble dynamics under water in high-magnetic fields using a high-speed video camera

  • Lee, Seung-Hwan;Minoru Takeda
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2004.04a
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    • pp.291-298
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    • 2004
  • The observations of rapid motion of bubbles under water for approximately 50 ms or less in high-magnetic fields of 10 T have been carried out successfully for the first time. The observation system constructed is composed of a high-speed video camera, a telescope, a cryostat with a split-type superconducting magnet, a light source, a mirror and a transparent sample cell. Using this system, the influence of magnetic field on the path and shape of single bubbles of O$_2$ (paramagnetism) and N$_2$ (diamagnetism) has been examined carefully. Experimental values describing the path are in good agreement with theoretical values calculated on the basis of the magneto-Archimedes effect, despite the effect of magnetism on the bubble. However, no effect of magnetism on the shape of the bubble is observed. In addition, the influence of magnetic field on drag coefficient of the bubble is discussed.

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The Thickness Dependence of Edge Effect in Thin Insulating Films

  • Song Jeong-Myen;Moon Byung-Moo;Sung Yung-Kwon
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.4
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    • pp.13-17
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    • 2003
  • This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

Low temperature curable organic gate insulator for organic field-effect transistors

  • Kim, Joo-Young;Jung, Myung-Sup;Lee, Sang-Yoon;Kim, Jong-Min;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.664-666
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    • 2008
  • Low-temperature curable organic insulator was prepared through blending of polyimide type base resin and cross-linking agent. The newly developed resin can be formed into films using a wet process and cured at $130^{\circ}C$. Using the low temperature cured film as the gate dielectric layer, the field effect mobility of $0.15\;cm^2/V{\cdot}s$ was obtained from a pentacene field effect transistor in the saturation regime and no hysteresis behavior was observed in transfer curves.

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Air stable n-type organic field effect transistors using a perfluoropolymer insulator

  • Jang, Jun-Hyuk;Kim, Ji-Whan;Park, Noh-Hwal;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.276-279
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    • 2008
  • Air stable n-type organic field effect transistors (OFETs) based on CB60B are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of $0.05\;cm^2P/V\;s$ in ambient air. Replacing the gate dielectric material by $SiO_2$ resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in ambient air.

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Electric characteristics of Schottky barrier Field Effect Transistors with Halogen and Deuterium lamp (쇼트키 장벽 트랜지스터의 빛 조사에 따른 전기적 특성 연구)

  • Hwang, Min-Young;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.348-348
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    • 2010
  • Nanostructures have great potential in various devices due to the their promising electronic and optical properties. Nano-patterned the front surface of a solar cell generally results in improved performance, mostly due to an increase in the short-circuit current by the incident photons strike the cell surface at an angle. In this work, we investigate AFM-assisted nano-patterned field effect transistors (FETs) with vairous silicon oxide distance value D, from ${\sim}0.5{\mu}m$ to $1{\mu}m$. Also, we compared the electro-optical characteristics of the patterned FETs and the non-patterned FETs (reference device) based on both 2-dimensional simulation and experimental results for the wavelength from 100nm to 900nm. In addition, we report electric characteristics for illuminated surface in schottky barrier field effect transistors (SB-FETs).

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Electrical Properties of CuPc Field-effect Transistor (CuPc를 이용한 전계효과트랜지스터의 전기적 특성)

  • Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.410-411
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    • 2008
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

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