• Title/Summary/Keyword: Field effect

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Edge wave propagation in an Electro-Magneto-Thermoelastic homogeneous plate subjected to stress

  • Kakar, Rajneesh;Kakar, Shikha
    • Structural Engineering and Mechanics
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    • v.53 no.6
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    • pp.1201-1214
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    • 2015
  • This paper introduces the combined effect of electric field, magnetic field and thermal field on edge wave propagating in a homogeneous isotropic prestressed plate of finite thickness and infinite length. The dispersion relation of edge wave has been obtained by using classical dynamical theory of thermoelasticity. The phase velocity has been computed and shown graphically for various initial stress parameter, electro-magneto parameter, electric parameter and thermoelastic coupling parameter.

High-Performance Single-Crystal Organic Nanowire Field-Effect Transistors of Indolocarbazole Derivatives

  • Park, Gyeong-Seon;Jeong, Jin-Won;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.368-368
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    • 2012
  • We report solution-processed, high-performance single-crystal organic nanowire transistors fabricated from a novel indolocarbazole (IC) derivative. The direct printing process was utilized to generate single-crystal organic nanowire arrays enabling the simultaneous synthesis, alignment and patterning of nanowires using molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. These new molecules are particularly suitable for p-channel organic field-effect transistors (OFETs) because of the high level of crystallinity usually found in IC derivatives. Selected area diffraction (SAED) and X-ray diffraction (XRD) experiments on these solution-processed nanowires showed high crystallinity. Transistors fabricated with these nanowires gave a hole mobility as high as 1.0 cm2V-1s-1 with nanowire arrays with the direct printing process.

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A basic study on human error proneness in computerized work environment (전산화된 작업환경에서 인간의 오류성향에 관한 기초연구)

  • Jeong, Gwang-Tae;Lee, Yong-Hui
    • Journal of the Ergonomics Society of Korea
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    • v.19 no.1
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    • pp.1-9
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    • 2000
  • This study was performed to investigate some characteristics on human error proneness in the computerized work environment. Our concerning theme was on human error likelihood according to personal temperament. Two experiments were performed. The first experiment was to study the effect of field- independence/dependence on error likelihood. The second experiment was on error proneness. These experiments were performed in information search task. which was most frequent task in computerized work environment such as the control room of nuclear power plant. Ten subjects were participated in this study. Analyzed results are as follows. Field-independence/dependence had a significant effect in both information search time and error frequency. Error proneness had a significant effect in both factors, too. And, a positive correlation was found between error frequency and information search time. These results will be utilized as a basis to study operator's error proneness in the computerized control room of nuclear power plant. later on.

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Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

  • Park, Sung-Hoon;Lee, Jae-Gil;Cho, Chun-Hyung;Choi, Yearn-Ik;Kim, Hyungtak;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.215-220
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    • 2016
  • Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.

Sensitivity Improvement and Operating Characteristics Analysis of the Pressure Sensitive Field Effect Transistor(PSFET) Using Highly-Oriented ZnO Piezoelectric Thin Film

  • Lee, Jeong-Chul;Cho, Byung-Woog;Kim, Chang-Soo;Nam, Ki-Hong;Kwon, Dae-Hyuk;Sohn, Byung-Ki
    • Journal of Sensor Science and Technology
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    • v.6 no.3
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    • pp.180-187
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    • 1997
  • We demonstrate the improvement of sensitivity and analysis of operating characteristics of the piezoelectric pressure sensor using ZnO piezoelectric thin film and FET(field effect transistor) for sensing applied pressure and transforming the pressure into electrical signals, respectively. The sensitivity of the PSFET(pressure sensitive field effect transistor) was improved by using highly-oriented ZnO film perpendicular to the substrate surface and the operating characteristics was investigated by monitoring output voltage with time in various static pressure levels.

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Electrical Properties of CuPc Field-effect Transistor Using CuPc Derivate Material (CuPc 유도체를 사용한 OFET의 전기적 특성 연구)

  • Lee, Ho-Shik;Park, Young-Pil;Cheon, Min-Woo;Kim, Tae-Gon;Kim, Young-Phyo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.279-280
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    • 2009
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

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Bipolar Characteristics of Organic Field-effect Transistor Using F16CuPc with Active Layer ($F_{16}CuPC$를 활성층으로 사용한 유기전계효과트랜지스터의 바이폴라 특성연구)

  • Lee, Ho-Shik;Park, Young-Pil;Cheon, Min-Woo;Kim, Tae-Gon;Kim, Young-Phyo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.303-304
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    • 2009
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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Numerical Analysis of Inverted Staggered-Type Hydrogenated Amorphous Silicon Thin Film Transistor (Inverted Staggered-Type 비정질 실리콘 박막트랜지스터의 수치적 분석)

  • Oh, Chang-Ho;Park, Jin-Seok;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1990.11a
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    • pp.93-96
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    • 1990
  • The characteristics of an inverted staggered-type hydrogenated amorphous silicon thin film transistor has been analyzed by employing numerical simulation. The field effect mobility and threshold voltage are characterized as a function of density of deep and tail states and lattice temperature. It has been found that the density of deep states plays an important role of determining the threshold voltage, while the field effect mobility are very sensitive to the slope of band tail states. Also, the numerically temperature dependence of field effect mobility and threshold voltage has been in good agreements with the experimental results.

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Real-Tim Sound Field Effect Implementation Using Block Filtering and QFT (Block Filtering과 QFT를 이용한 실시간 음장 효과구현)

  • Sohn Sung-Yong;Seo Jeongil;Hahn Minsoo
    • MALSORI
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    • no.51
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    • pp.85-98
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    • 2004
  • It is almost impossible to generate the sound field effect in real time with the time-domain linear convolution because of its large multiplication operation requirement. To solve this, three methods are introduced to reduce the number of multiplication operations in this paper. Firstly, the time-domain linear convolution is replaced with the frequency-domain circular convolution. In other words, the linear convolution result can be derived from that of the circular convolution. This technique reduces the number of multiplication operations remarkably, Secondly, a subframe concept is introduced, i.e., one original frame is divided into several subframes. Then the FFT is executed for each subframe and, as a result, the number of multiplication operations can be reduced. Finally, the QFT is used in stead of the FFT. By combining all the above three methods into our final the SFE generation algorithm, the number of computations are reduced sufficiently and the real-time SFE generation becomes possible with a general PC.

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Effect of Cu substitution on Superconductivity in $(Ru_{1-x}Cu_x)Sr_2(Eu_{1.34}Ce_{0.66})Cu_2O_z$ System (Cu 치환에 따른 $(Ru_{1-x}Cu_x)Sr_2(Eu_{1.34}Ce_{0.66})Cu_2O_z$ 계의 초전도 특성)

  • Lee, H.K.
    • Progress in Superconductivity
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    • v.11 no.1
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    • pp.67-71
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    • 2009
  • The effect of Cu substitution on the structural and superconducting properties of the $(Ru_{1-x}Cu_x)Sr_2(Eu_{1.34{\cdot}}Ce_{0.66})Cu_2O_z$ system with x = 0, 0.25 and 0.5 prepared under ambient pressure have been investigated. The X-ray diffraction patterns indicated that the Ru ions are replaced by the Cu ions. It is found that the Cu substitution for Ru significantly reduces the ferromagnetic component of field-cooled magnetic susceptibility, but results in a small change in diamagnetic onset transition temperature of zero-field-cooled magnetic susceptibility. In contrast to the Ru $Sr_2(Eu_{1.34{\cdot}}Ce_{0.66})Cu_2O_z$, bulk Meissner effect is observed in the field-cooled magnetization measurements of the Cu doped samples. The experimental results are discussed in connection with the spontaneous vortex phase interpretation.

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