• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 춘계학술대회
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• pp.527-528
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• 2017

터널 전계 효과 트랜지스터(tunnel field effect transistor; TFET)의 게이트를 소스 영역으로 오버랩 시킨 구조에서 가우시안으로 P형 도핑한 경우의 전류특성을 조사했다. 제안된 구조는 채널을 P형 도핑하여 험프를 제거하고 가우시안 도핑하여 드레인 벌크영역에서 나타나는 역방향성(ambipolar) 전류를 최소화시켰다. 소스-채널-드레인을 P-P-N으로 구성된 TFET의 구동전류는 P-I-N TFET와 동일하나 문턱전압 이하 기울기(Subthreshold Swing; SS)에서 5배 높은 효율이 관찰되었으며 차단전류는 가우시안 도핑 결과가 일정한 도핑에 비해 약 10배 감소하였고, 역방향성 전류는 100배 감소하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.277.1-277.1
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• 2016

We report on synthesis of large-area MoS2 using chemical vapor deposition (CVD). Relatively uniform MoS2 are obtained. To fabricate field-effect transistor (FET) devices, MoS2 films are transferred to another SiO2/Si substrate using polystyrene (PS) and patterned using oxygen plasma. In addition, to reduce contact resistance, synthesis of graphene used as channel. Device characteristics are presented and compared with the reported results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.120.1-120.1
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• 2015

We investigate the degradation pattern of Black phosphorus (BP) field effect transistor (FETs) investigated by using an mechanically exfoliated BP that react O2 and water vapor in ambient condition, degradation. The BP FETs was electrically measured every 20 minutes (1cycle) in the air, the total cycle is 100. We show electrical changes with Mobility, On/off ratio, Current and a significant positive shift in the threshold voltage. We extracted the current level at Vgs-Vth = 0, -10, -20 and fitting with Swiss-cheese model. This model suggested that Swiss-cheese model is well fitted with degradation pattern of BP FETs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.167.1-167.1
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• 2015

We investigate the degradation pattern of Black phosphorus (BP) field effect transistor (FETs) was investigated by using an mechanically exfoliated BP that react O2 and water vapor in ambient condition, degradation. The BP FETs was electrically measured every 20 minutes (1cycle) in the air, the total cycle is 100. We show electrical changes with Mobility, On/off ratio, Current and a significant positive shift in the threshold voltage. We extracted the current level at Vgs-Vth = 0, -10, -20 and fitting with Swiss-cheese model. This model suggested that Swiss-cheese model is well fitted with degradation pattern of BP FETs.

• International Journal of Aeronautical and Space Sciences
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• 제11권3호
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• pp.201-205
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• 2010

DC/DC Switching power converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. A switching converter utilizes one or more energy storage elements such as capacitors, or transformers to efficiently transfer energy from the input to the output at periodic intervals. The fundamental boost converter studied here consists of a power metal-oxide semiconductor field effect transistor switch, an inductor, a capacitor, a diode, and a pulse-width modulation circuit with oscillator, amplifier, and comparator. A buck converter containing a switched-mode power supply is also studied. In this paper, the electrical characteristics of DC/DC power converters are simulated by simulation program with integrated circuit emphasis (SPICE). Furthermore, power efficiency was analyzed based on the specifications of each component.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.180-180
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• 2003

FRAM (Ferroelectric Random Access Memory)은 DRAM(Dynamic Random Access Memory)in 커패시터 재료을 상유전체 물질에서 강유전체 물질로 대체하여 전원 공급이 차단되어도 정보를 기억할 수 있고, 데이터의 고속처리가 가능하고 저소비전력과 집적화가 뛰어난 차세대 메모리 소자이다. 본 연구에서는 n-Well/P-Si(100) 기판위에 $Y_2$O$_3$ 박막을 중간층 (buffer layer)으로 사용하여 (Bi,La) Ti$_3$O$_{12}$ (BLT) 강유전체 박막을 졸-겔 방법으로 형성하여 MFM(I)S(Metal Ferroelectric Metal (Insulation) Silicon) 구조의 커패시터 및 전계효과형 트랜지스터(Field Effect Transistor) 소자를 제작하였다. 제작된 소자에 대해 형상학적, 전기적 특성을 조사, 분석하였다.

• Journal of Microbiology and Biotechnology
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• 제13권3호
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• pp.373-377
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• 2003

Various groups of industrial and agricultural pollutants (heavy metal ions, cyanides, and pesticides) can be detected by enzymes. Since heavy metal ions inhibit urease, cyanides inhibit peroxidase, organophosphorus and carbamate pesticides inhibit butyrylcholinesterase, these enzymes were co-immobilized into a bovine serum albumin gel on the surface of an ion-sensitive field effect transistor to create a bioprobe that is sensitive to the compounds mentioned above. The sensitivity of the present sensor towards KCN corresponded to $1\;\mu\textrm{M}$ with 1 min of incubation time. The detection limits for Hg(II) ions and the pesticide carbofuran were 0.1 and $0.5\;\mu\textrm{M}$, respectively, when a 10 min sensor incubation time in contaminated samples was chosen. The total time for determining the concentrations of all species mentioned did not exceed 20 min.

• 전기의세계
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• 제14권6호
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• pp.1-7
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• 1965

This paper provides the analysis of the differential amplifier using the insulated gate, metala-oxide-semiconductor type field-effect-transistor(MOS FET), for its active element and the power drift of the amplifer. From these analytical considerations some design standardsn were found for the MOS FET differential amplifier available for the measurement of the very small current (pico-ampare range). A differential amplifier was designed and built in the view of above considerations. Its equivalent input gate voltages of the thermal drift and the power drift were 0.57mV/.deg. C in the range 25.deg. C-60.deg. C and 8.8mV/V in the range of 20% drift of its orginal value, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.40-40
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• 2010

CdSe nanocrystals (NCs) have been decorated on singlewalled carbon nanotubes (SWCNTs) by combining a method of chemically modified substrate along with gate-bias control. CdSe/ZnS core/shell quantum dots were negatively charged by adding mercaptoacetic acid (MAA). The silicon oxide substrate was decorated by octadecyltrichlorosilane (OTS) and converted to hydrophobic surface. The negatively charged CdSe NCs were adsorbed on the SWCNT surface by applying the negative gate bias. The selective adsorption of CdSe quantum dots on SWCNTs was confirmed by confocal laser scanning microscope. The measured photocurrent clearly demonstrates that CdSe NCs decorated SWCNT can be used for photodetector and solar cell that are operable over a wide range of wavelengths.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.51-65
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• 2008

The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metal-ferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.