Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.03b
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- Pages.40-40
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- 2010
Photocurrent of CdSe nanocrystals on singlewalled carbon nanotube-field effect transistor
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Jeong, Seung-Yol
(Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute (KERI)) ;
- Lim, Seung-Chu (Department of Physics, Sungkyunkwan University) ;
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Lee, Young-Hee
(Department of Physics, Sungkyunkwan University)
- Published : 2010.03.26
Abstract
CdSe nanocrystals (NCs) have been decorated on singlewalled carbon nanotubes (SWCNTs) by combining a method of chemically modified substrate along with gate-bias control. CdSe/ZnS core/shell quantum dots were negatively charged by adding mercaptoacetic acid (MAA). The silicon oxide substrate was decorated by octadecyltrichlorosilane (OTS) and converted to hydrophobic surface. The negatively charged CdSe NCs were adsorbed on the SWCNT surface by applying the negative gate bias. The selective adsorption of CdSe quantum dots on SWCNTs was confirmed by confocal laser scanning microscope. The measured photocurrent clearly demonstrates that CdSe NCs decorated SWCNT can be used for photodetector and solar cell that are operable over a wide range of wavelengths.