• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.207-210
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• 2001

Metal-organic VPE (MOVPE) epitaxial growth procedure and related device fabrication technique are reported for GaInP-based epitaxial materials and devices. For GaInP/GaInAs two-dimensional electron-gas field-effect transistor (TEGFET), a promising epitaxial stacking structure resulting in enhanced electron mobility is given. In conjunction with this, a new device fabrication technique to improve luminous intensity of GaInP-based LED is also shown.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.253-256
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• 2002

In Currently, OTFTS are actively studied around the world because they are expected to create new novel applications, which can not be implemented by the conventional Si semiconductor, due to the unique characteristics of organic materials. In this paper, the hole field effect mobility has been improved to the level of a-Si TFTs with 0.3cm2/V.sec, simply applying the surface treatment process on the gate with organic molecules. In addition, the model has been suggested and the temperature dependence of hole mobility analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.342-345
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• 2009

Bright light-emitting single crystal organic field-effect transistors (FETs) based on highly luminescent oligo(p-phenylenevinylene) (OPV) derivatives are demonstrated. Although OPV single crystal FETs show both p - and n - type FET operation, we found that an increase in the conjugation length of the OPV derivatives from three phenylene rings to five phenylene rings results in an improvement in the electron mobility by an order of magnitude, while retaining the high hole mobility with intense electroluminescence.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.310-311
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• 2009

New X-shaped crystalline molecules have been synthesized through various coupling reactions and their electronic properties were investigated. They exhibit good solubility in common organic solvents and good self-film forming properties. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform and preferred orientations of molecules. They also exhibited high field effect mobilities in thin film transistor (TFT) and good device performances.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1561-1563
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• 2008

We report an optical second harmonic generation measurement that allows direct probing of dynamical carrier motion in organic field effect transistors. Carrier injection and transport process are discriminated. The mobility and contact resistance of pentacene FETs are determined from the visualized diffusion-like carrier motion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.695-698
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• 2008

We investigated the characteristics of Strained-Si-on-Insulator (sSOI) MOSFETs with 0.7% tensile strain. The sSOI MOSFETs have superior subthreshold swing under 70 mV/dec and output current. Especially, the electron and hole were increased in sSOI MOSFET. The electron and hole mobility in sSOI MOSFET were 286$cm^2/Vs$ and 151$cm^2/Vs$, respectively. The carrier mobility enhancement is due to the subband splitting by 0.7% tensile strain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.378-381
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• 2001

The electron drift mobility of poly(4,4'-cyclohexylidenediphenyl carbonate) (PC-Z) doped with 3,5-dimethy-3,5-di-t-butylstilbenequinone(MBSQ), 3,5,3,5-tetra-t-butyl stilbenequinone(TBSQ) and 3,5,3,5-tetra-methyl stilbenequinone(TMSQ) was measured by the time-of-flight technique. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel, Arrhenius formulations and non-Arrhenius type of temperature dependence. It was assumed that the hopping sites were Gaussian distribution. Mobility and activation energy of MBSQ were increased with increasing dopant. However, mobilities and activation energy of TBSQ and TMSQ were increased and decreased, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.378-381
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• 2001

The electron drift mobility of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethy-3,5-di-t-butylstilbenequinone(MBSQ), 3,5,3,5-tetra-t-butyl stilbenequinone(TMSQ) and 3,5,3,5-tetra-methyl stilbenequinone(TMSQ) was measured by the time-of-flight technique. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel, Arrhenius formulations and non-Arrhenius type of temperature dependence. It was assumed that the hopping sites were Gaussian distribution. Mobility and activation energy of MBSQ were increased with increasing dopant. However, mobilities and activation energy of TBSQ and TMSQ were increased and decreased, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.47-52
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• 2007

Organic field-effect transistors (OFETS) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with varying channel length. The CuPc FET device was made a top-contact type and the channel length was a $100\;{\mu}m,\;50\;{\mu}m,\;40\;{\mu}m,\;and\;30\;{\mu}m$ and the channel width was a fixed at 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with varying channel length (L) and we calculated the effective mobility. Also, we measured a capacitance-voltage (C-V) by applied bias voltage with varying frequency at 43, 100, 1000 Hz.