• Steel and Composite Structures
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• 제29권5호
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• pp.647-657
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• 2018

Geometric imperfections may be created during the production process or setting borders of single-layer graphene sheets (SLGSs). Vacancy defects are an instance of geometric imperfection, so investigating the effect of these vacancies on the mechanical properties of single-layer graphene is extremely important. Since very few studies have been conducted on the structure of imperfect graphene (with the vacancy defect) as an anisotropic structure, further study of this defective structure seems imperative. Due to the vacancy defects and for the proper assessment of mechanical properties, the graphene structure should be considered anisotropic in certain states. The present study investigates the effects of site and size of vacancy defects on the mechanical properties of graphene as an anisotropic structure using the lekhnitskii interaction coefficients and Molecular Dynamic approach. The effect of temperature on the severity of the SLGS becoming anisotropic is also investigated in this study. The results reveal that the amount of temperature has a big effect on the severity of the structure getting anisotropic even for a graphene without any defects. The effect of aspect ratio, temperature and also size and site of vacancy defects on the material properties of the graphene are studied in this research work. According to the present study, using material properties of flawless graphene for imperfect structure can lead to inaccurate results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.278.1-278.1
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• 2013

Among the prerequisites for stable neural interfacing are the long-term stability of electrical performance of and the excellent biocompatibility of conducting materials in implantable neural electrodes. Reduced graphene oxide offers a great potential for a variety of biomedical applications including biosensors and, particularly, neural interfaces due to its superb material properties such as high electrical conductivity, decent optical transparency, facile processibility, and etc. Nonetheless, there have been few systematic studies on the graphene-based neural interfaces in terms of biocompatibility of electrode materials and long term stability in electrical characteristics. In this research, we prepared the primary culture of rat hippocampal neurons directly on reduced graphene oxide films which is chosen as a model electrode material for the neural electrode. We observed that the viability of primary neuronal culture on the present structure is minimally affected by nanoscale graphene flakes below. These results implicate that the multilayer films of reduced graphene oxides can be utilized for the next-generation neural interfaces with decent biocompatibility and outstanding electrical performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.380.2-380.2
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• 2014

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.368-368
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• 2010

Monolayers of graphite can be grown by fine controlled surface graphitization on the surfaces of various metallic and semiconducting materials. Epitaxial graphene grown on polished silicon carbide crystal surfaces has drawn much attention due to well known vacuum annealing procedures from surface analysis methods, especially scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). In this study, we have grown single layer and few layer graphene on silicon terminated 6H-SiC(0001) crystals. The growth of graphene layers were observed by low energy electron diffraction(LEED) patterns. Scanning tunneling microscopy and spectroscopy measurements were performed to illustrate the electronic structure which may display some clue on the influence of the underlying structure. Spatially resolved STS results acquired at the edges of epitaxial graphene show in detail the electron density of states, which is compared to theoretical calculations. STM measurements were also done on graphene films grown by chemical vapor deposition(CVD) and transferred onto a SiC(0001) crystal. These observations may provide a hint for the understanding of carrier scattering at the edges.

• 한국결정성장학회지
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• 제22권2호
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• pp.84-91
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• 2012

Single and few-layer graphene nanosheets (GNs) have successfully synthesized by a modified Hummer's method followed by chemical reduction of exfoliated graphene oxide (GO) in the presence of hydrazine monohydrate. GO and GNs were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), X-ray diffractions (XRD), Raman spectroscopy, Transmission electron microscopy (TEM), Atomic force microscopy (AFM), Optical microscopy (OM) and by electrical conductivity measurements. The result showed that electrical conductivity of GNs was significantly improved, from $4.2{\times}10^{-4}$ S/m for GO to 12 S/m for GNs, possibly due to the removal of oxygen-containing functional group during chemical reduction. In addition, the $NO_2$ gas sensing characteristics of GNs are also discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.80-80
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• 2010

Graphene has attracted tremendous attention for the last a few years due to it fascinating electrical, mechanical, and chemical properties. Up to now, several methods have been developed exclusively to prepare graphene, which include micromechanical cleavage, polycrystalline Ni employing chemical vapor deposition technique, solvent thermal reaction, thermal desorption of Si from SiC substrates, chemical routes via graphite intercalation compounds or graphite oxide. In particular, polycrystalline Ni foil and conventional chemical vapor deposition system have been widely used for synthesis of large-area graphene. [1-3] In this study, synthesis of mono-layer graphene on a Ni foil, the mixing ratio of hydrocarbon ($CH_4$) gas to hydrogen gas, microwave power, and growth time were systemically optimized. It is possible to synthesize a graphene at relatively lower temperature ($500^{\circ}C$) than those (${\sim}1000^{\circ}C$) of previous results. Also, we could control the number of graphene according to the growth conditions. The structural features such as surface morphology, crystallinity and number of layer were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), transmission electron microscopy (TEM) and resonant Raman spectroscopy with 514 nm excitation wavelength. We believe that our approach for the synthesis of mono-layer graphene may be potentially useful for the development of many electronic devices.

• 한국재료학회지
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• 제28권5호
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• pp.279-285
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• 2018

Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1095-1099
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• 2009

As a substitute material for silicon, we synthesized few layer graphene (FLG) by CVD process with a 300-nm-thick nickel film deposited on the silicon substrate and found out the lowest temperature for graphene synthesis. Raman spectroscopy study showed that the D peak (wave length : ${\sim}1,350\;cm^{-1}$) of graphene was minimized and then the 2D one (wave length : ${sim}2,700\;cm^{-1}$) appeared when rapid thermal anneal is carried out with the $C_2H_2$ treated nickel film. This study demonstrates that a high quality FLG formed at a low temperature of $400^{\circ}C$ is applicable as CMOS devices and transparent electrode materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.9-10
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• 2010

Since the discovery of graphene by mechanical exfoliation from graphite[1], various fabrication methods are available today such as chemical exfoliation, epitaxial graphene on SiC substrates, etc. In view of industrialization, the mechanical exfoliation method may not be an option. Epitaxial graphene on SiC substrates, in this respect, is by far more practical because the method consists of conventional thermal treatments familiar to semiconductor industry. Still, the use of the SiC substrate itself, and hence the incompatibility with the Si technology, lessens the importance of this technology in its future industrialization. In this context, we have tackled the problem of forming graphene on Si substrates (GOS). Our strategy is to form an ultrathin (~80 nm) SiC layer on top of a Si substrate, and to graphitize the top SiC layers by a vacuum annealing. We have actually succeeded in forming the GOS structure [2,3,4]. Raman-scattering microscopy indicates presence of few-layer graphene (FLG) formed on our annealed SiC/Si heterostructure, with the G ($1580\;cm^{-1}$) and the G'($2700\;cm^{-1}$) bands, both related to ideal graphene, clearly observed. Presence of the D ($1350\;cm^{-1}$) band indicates presence of defects in our GOS films, whose elimination remains as a challenge in the future. To obtain qualified graphene films on Si substrate, formation of qualified SiC films is crucial in the first place, and is achieved by tuning the growth parameters into a process window[5]. With a potential for forming graphene films on large-scale Si wafers, GOS is a powerful candidate as a key technology in bringing graphene into silicon technology.

• 한국표면공학회지
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• 제54권3호
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• pp.124-132
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• 2021

Graphene which grown on the cobalt or nickel sputtered copper foil depending on the annealing time was studied. Graphene on the copper foil grown by chemical vapor deposition was compared to those on cobalt or nickel sputtered copper foil by using a RF (Radio Frequency) magnetron sputtering at room temperature. FLG(few-layer graphene) was identified independent of substrates by Raman and X-Ray Photoelectron Spectroscopy analyses. On copper foil, size and area fraction of the graphene growth increased until 30 minutes annealing and then didn't changed. Comparing to that, graphene on the cobalt refined till 50 minutes annealing, after then the effect disappeared which means a similar shape to that on copper foil. On nickel the graphene refined irrespective of annealing time that is possibly because of the complete solid solution of nickel with copper.