• 한국진공학회지
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• 제17권2호
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• pp.148-155
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• 2008

PMN계 강유전체의 MPB 조성과 공존영역의 확산성을 이해하기 위해 유전 및 초전 특성을 분석하였다. PMN-PT계는 완만한 상전이를 보였으며, 이는 하나의 상유전과 2개의 강유전상이 공존함을 의미한다. 즉, 0.7PMN-0.3PT 조성 부근에서 능면정계와 정방정계의 공존 영역인 조성변태 상경계를 확인하였으며, 이들 조성은 연속적으로 능면정계$\rightarrow$정방정계$\rightarrow$입방정계로 상전이를 하였다. PT>0.325인 조성들은 측정된 진동수 범위에서 진동수 의존성을 보이지 않는 단일상의 강유전 특성을 보였으며, PMN>0.7인 조성들은 큰 진동수 의존성과 확산상전이의 전형적인 완화형 강유전 특성을 보였다. PMN-PT계의 조성변태 상경계 조성들은 우수한 유전 및 초전특성을 나타내었다.

• 한국세라믹학회지
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• 제29권11호
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• pp.870-876
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• 1992

Lead lanthanum zirconate titanate (PLZT, 6/65/35) powders, crack-free and dense thin films have been prepared by polymeric sol-gel process. Pyrolysis of the gel, crystallization and optical transmittance behavior of the PLZT thin film onto sapphire substrate have been studied. Esterification occurs during synthesis of PLZT complexation. Crystalline Pb phase was transiently formed near 450$^{\circ}C$. Content of perovskite phase in the films were increased with increasing thickness of film, but the kinetics of formation of perovskite phase in films was slower than that of powders. Transmittance of the films was decreased with increasing the temperature of heat treatment. Ferroelectric hysteresis loop measurements indicated increments of remanent polarization and coercive field for plenty more of perovskite phase.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.64-67
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• 2011

The effect of Ta substitution on the crystal structure, ferroelectric, and piezoelectric properties of $Bi_{0.5}(Na_{0.82}K_{0.18})_{0.5}Ti_{1-x}Ta_xO_3$ ceramics has been investigated. The Ta doping resulted in a transition from coexistence of ferroelectric tetragonal and rhombohedral phases to an electrostrictive pseudocubic phase, leading to degradations of the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electricfield-induced strain was significantly enhanced by the Ta substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 566 pm/V under an applied electric field 6 kV/mm when 2% Ta was substituted on Ti sites. The abnormal enhancement in strain was attributed to the pseudocubic phase with high electrostrictive constants.

• 한국정보통신학회논문지
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• 제6권6호
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• pp.904-908
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• 2002

본 논문에서는 강유전체 기반, 마이크로스트립 라인을 이용하여 13~170Hz에 걸친 넓은 주파수 범위에서 삽입 손실이 2dB 이하, 반사 손실이 10dB 이상인 4-coupled 가변 위상 천이기를 제안한다 특히, 15GHz에서 위상 천이 편이(DPS)는 0V를 인가하였을 때 $89{\circ}$ 이었고, 인가 전압을 150V로 증가시켰을 때 $115{\circ}$ 이었다. 그러므로 위상 천이 편이의 가변성은 $26{\circ}$에 달한다.

• Coupled systems mechanics
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• 제6권1호
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• pp.29-40
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• 2017

This work employed density functional theory to investigate the structural and ferroelectric properties of the Ruddlesden-Popper (RP) phase of lead titanate, $Pb_2TiO_4$, as well as its phase transitions with epitaxial strain. A wealth of novel structural instabilities, which are absent in the host $PbTiO_3$ material, were identified in the RP phase through phonon soft-mode analysis. Our calculations showed that the ground state of $Pb_2TiO_4$ is antiferroelectric, distinct from the dominant ferroelectric phase in the corresponding host material. In addition, applied epitaxial strain was found to play a key role in the interactions among the instabilities. The induction of a sequence of antiferroelectric and antiferrodistortive (AFD) phase transitions by epitaxial strain was demonstrated, in which the ferroic instability and AFD distortion were cooperative rather than competitive, as is the case in the host $PbTiO_3$. The RP phase in conjunction with strain engineering thus represents a new approach to creating ferroic orders and modifying the interplay among structural instabilities in the same constituent materials, enabling us to tailor the functionality of perovskite oxides for novel device applications.

• 전기학회논문지P
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• 제51권2호
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.286-291
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• 1998

Dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$, ceramics prepared by the columbite precursor method have been investigated as a function of the sintering temperature in the range of 1000∼$1250^{\circ}C$. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ ceramics show typical relaxor ferroelectric behavior. As the sintering temperature increased, the dielectric constant increased and the phase transition temperature shifted to lower temperature. The TCK(temperature coefficient of dielectric constant) and VRK (variation rate of dielectric constant) increased with increasing sintering temperature. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ compositions sintered at $1250^{\circ}C$ appear to be suitable for ferroelectric bolometer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.309-312
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• 2002

Ferroelectric $Sr_{0.3}Ba_{0.7}Nb_{2}O_{6}$ (SBN30) thin films were deposited on Pt/Ti/$SiO_{2}$/Si(100) substrates by ion beam sputtering. During annealing treatment at $750^{\circ}C$, poling was attempted by applying dc voltage bias across polished surfaces. Phase relation, microstructure and crystallization behavior were examined using XRD and FE-SEM. Ferroelectric hysteresis characteristics were also determined where both remanent polarization and coercive values decreased with the increase of bias voltage. The measured remanent polarization and coercive field values at 5 V and 10 V bias were $36{\mu}C/cm^2$, $10{\mu}C/cm^2$ and 100kV /cm, 80kV /cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.85-86
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• 2007

A poly(vinylidene fluoride-trifluoroethyene) (P(VDF-TrFE)) copolymer thin film having ${\beta}$ phase was prepared by sol-gel method. The electrical properties of the film were studied to evaluate the possibility for appling to a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurement revealed that the Au/P(VDF-TrFE)/Si structure with a 4 wt% film had a memory window width of about 0.5V for a bias voltage sweep of 1V.

• 한국전기전자재료학회논문지
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• 제32권1호
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• pp.20-24
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• 2019

Ferroelectric material properties are strongly governed by domain structures and their evolution processes, but the evolution processes of complex domain patterns during a macroscopic electrical poling process are still elusive. In the present work, domain-evolution processes in a PZT ceramic near the morphotropic phase-boundary composition were studied during a step-wise electrical poling using piezoresponse force microscopy (PFM). Electron backscatter diffraction was used with the PFM data to identify the grain boundaries in the region of interest. In response to an externally the applied electric field, growth and retreat of non-$180^{\circ}$ domain boundaries wasere observed. The results indicate that ferroelectric polarization-switching nucleates and evolves in concordance with the pattern of the pre-existing domains.