• Bulletin of the Korean Chemical Society
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• 제18권1호
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• pp.56-61
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• 1997

Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.504-508
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• 2003

New banana-shaped achiral compounds, 4-chloro-1,3-phenylene bis [4-4(3-fluoro-9-alkenyloxy) phenyl-iminomethylbenzoate]s and 4-chloro-1,3-phenylene bis [4-4-(3-fluoro-10-alkanyloxy) phenyliminomethyl benzoate]s were synthesized by varying the substituent (X=H, F, or Cl); their electrooptical properties are described. The smectic phases, including a switchable chiral smectic C ($SmC^{\ast}$) phase, were characterized by differential scanning calorimetry, polarizing optical microscopy, and triangular method. The presence of vinyl end group at the terminals of linear side wings in the banana-shaped molecules induced a decrease in melting temperature. The smectic phase having the undecenyloxy group such $as-(CH_2)_9CH=CH_2$ showed ferroelectric switching, and its value of spontaneous polarization on reversal of an applied electric field was 2250 $nC/cm^2$, while the value of spontaneous polarization of the smectic phase having the decanyloxy group such as $-(CH2)_9CH_3$ was 3700 $nC/cm^2$. We could obtain the ferroelectric phase with low isotropic temperature by varying the end group at the terminals of linear side wings in the banana-shaped achiral molecules.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.127-130
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• 2003

4-bit 강유전체 위상변위기를 이용하여 10 GHz, 상온에서 작동하는 위상배열 안테나를 설계 및 제작하였다. 이 안테나는 빔 스캔을 위하여 전압에 대한 비선형특성을 보이는 강유전체 Bal-xSrxTiO3 (BST)를 기본으로 하는 위상변위기를 이용하였다. 우리는 펄스레이져 증착법으로 MgO (001) 기판위에 걸맞게 증착된 BST 박막을 일반적인 사진공정과 식각법을 이용하여 동일평판형 전극을 가진 위상변위기를 만들었다. 일반적인 동일평판형 강유전체 위상변위기의 경우 연결 전송선로의 임피던스와의 차이로 인해 반사손실과 이로 인한 부가적인 삽입손실이 발생한다. 이런 손실들을 줄이기 위해 입력과 출력 포트에 임피던스 매칭을 하였다. 이렇게 테이퍼링되어 만들어진 동일평판형 위상변위기는 이전의 구조에 비해 반사 손실과 삽입 손실 값에서 각각 약 10, 2 dB 정도씩의 개선을 보였다. 이 구조로 전송선로의 길이를 길게하여 만든 1-bit 강유전체 위상변위기는 10 GHz, 150 V의 전압변화에서 180도의 차등위상변위를 보였으며 최대 삽입손실과 최대 반사손실은 각각 약 10 dB, 20 dB 이다. 안테나 모듈은 4개의 마이크로스트림 패치 안테나와 4개의 강유전체 위상변위기로 이루어졌는데 10 GHz, 150 V의 전압변화에서 약 15도의 빔 스캔을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.349-352
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• 1989

Poling piezoelectric ceramic-polymer composites with 0-3connectivity is difficult because of the high dielectric constant of most of the ferroelectric filler materials, and the high resistivity of the polymer matrix. To aid in poling this type of composite, conductivity of the polymer phase can be controlled by adding small amount of a semiconductor phase such as germanium, carbon or silicon. In this study, flexible piezoelectric composites of $PbTiO_3$ powder and Eccogel polymer were developed using small amounts of a semiconducting phase. These composites were poled rapidly at low voltages, resulting in properties superior to composites prepared without a conductive phase. The effect of addition of various conductive phase with different volume percentage on the dielectric and piezoelectric properties of the composite are discussed here.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.496-503
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• 1994

In recent years Sol-Gel processing provides an interesting alternative method for the fabrication of ferroelectric thin layers and powder. PZT powder was prepared from an alkoxide-based solution by a Sol-Gel method. Gelation of synthesized complex solutions, microstructure, thermal analysis and crystallization behaviors of the calcined powder were studied in accordance with a water content and a catalyst. Especially gelation and crystallization behavior were analysed with the change of pH. The gelation time decreased as the pH of the mixed solution increased. For PZT powder with 650.deg. C heat treatment, 100% perovskite phase was formed by using either acidic or basic catalyst. By using either acidic or basic catalyst, we were able to get very fine powders of uniform shape with an average particle size of 0.8-1.mu.m.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.37-37
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• 2003

Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.717-720
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• 2001

Ferroelectric lead ziroconate titanate (PZT) thin film were fabricated on the different bottom electrodes. Both Ru and Ru/RuO$_2$bottom electrodes were deposited by RF-magnetron sputteirng method. The structure phase and surface morphology of the PZT thin film were largely affected by the bottom electrode. It was observerd that used of Ru/RuO$_2$double electrode reduced leakage current and better ferroelectric properties compare with RuO$_2$bottom electrode. From these results, Ru/RuO$_2$hybride bottom electrode is thought to be the available structure for the bottom electrode.

• 한국세라믹학회지
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• 제33권6호
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• pp.623-630
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• 1996

A Sol-gel derived ferroelectric PbTiO3 thin film was synthesized by using diethanolamine (DEA) as a comple-xing agent. Surface chemical analyses were examined in order to study the effect of heating temperature on the composition of thin film by EPMA and XPS. A rapid volatilization of lead was observed in the films fired at $700^{\circ}C$ or higher and the ratio of Pb:Ti was found to be 34:66. A depth profile by Ar+ showed that the Ar sputtering decreased Pb amount of inner part of the film resulting in Ti-rich phase near the surface of the film.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1112-1117
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• 2003

Polarized Fourier transform infrared (IR) absorption is used to probe molecular conformation in a ferroelectric liquid crystal (FLC) during the reorientation induced by the external field. Spectra of planar aligned cells of FLC W314 are measured as functions of IR polarizer orientation and electric field applied to the FLC. The time evolution of the dichroism of the absorbance due to biphenyl core and alkyl tail molecular vibration modes, is observed. Static IR dichroism experiments show a W314 dichroism structure in which the principal axis of dielectric tensor from molecular core vibration are tilted further from the smectic layer normal than those of the tail. This structure indicates the effective binding site in which the molecules are confined in the Sm-C phase has, on average, "zig-zag" shape and this zig-zag binding site structure is rigidly maintained while the molecular axis rotates about the layer normal during field-induced switching.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.865-870
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• 2003

The MFIS (Metal-Ferroelectric-Insulator-Semiconductor) capacitors were fabricated using a metalorganic decomposition method. Thin layers of CeO$_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the CeO$_2$ layer. The morphology of films and the interface structures of the BLT and the CeO$_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 2.82 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.