• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.171-171
• /
• 2007

Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.

• Journal of KIISE:Computing Practices and Letters
• /
• v.14 no.4
• /
• pp.378-388
• /
• 2008

Flash memory has been attracting attention as the next mass storage media for mobile computing systems such as notebook computers and UMPC(Ultra Mobile PC)s due to its low power consumption, high shock and vibration resistance, and small size. A storage system with flash memory excels in random read, sequential read, and sequential write. However, it comes short in random write because of flash memory's physical inability to overwrite data, unless first erased. To overcome this shortcoming, we propose an SSD(Solid State Disk) architecture with two novel features. First, we utilize non-volatile FRAM(Ferroelectric RAM) in conjunction with NAND flash memory, and produce a synergy of FRAM's fast access speed and ability to overwrite, and NAND flash memory's low and affordable price. Second, the architecture categorizes host write requests into small random writes and large sequential writes, and processes them with two different buffer management, optimized for each type of write request. This scheme has been implemented into an SSD prototype and evaluated with a standard PC environment benchmark. The result reveals that our architecture outperforms conventional HDD and other commercial SSDs by more than three times in the throughput for random access workloads.

• Korean Journal of Materials Research
• /
• v.30 no.2
• /
• pp.99-104
• /
• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.140-141
• /
• 2007

To fabricate the metal-ferroelectric-insulator-semiconductor (MFIS) structure for the ferroelectric random access memory (FRAM) application, we prepared the ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ (SBT) and the insulator LaZrOx (LZO) thin films on the silicon substrate using a sol-gel method. In this study, we will investigate the feasibility of the SBT/LZO/Si structure as one of the promising gate configuration for the 1-transistor (1-T) type FRAM, by measurements of the electrical properties and the physical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.87-90
• /
• 2002

In recent year, BLT($Bi_{3.25}La_{0.75}Ti_{3}O_{12}$) has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $Bi_{3.25}La_{0.75}Ti_3O_{12}$ Target with a ceramic process. The BLT target was sintered at ${1100^{\circ}C}$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric properly as a functions of post annealing temperatures. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample of ${700^{\circ}C}$. This sample exhibited the (117) preferred crystal orientation, current density of $3{\times}10^{-8}A/cm^2$, a remanent polarization of $8{\mu}C/cm^2$ and a coercive field of 42.1 KV/cm respectively.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.05a
• /
• pp.190-193
• /
• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_{3}O_{12}$, thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si(100) substrates by a MOCVD process. Fabricated BGT thin films were found to be random oriental ions, which were confirmed by X-ray diffraction and scanning electron microscope analysis. The remanent polarization value ($2P_r$) of the BGT thin film annealed at $720^{\circ}C$ was $45.13{\mu}C/cm^2$, at an applied voltage of 5 V. The BGT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied voltage of 5 V. These results indicate that the randomly oriented BGT thin film is a promising candidate among ferroelectric materials useful in lead-free nonvolatile ferroelectric random access memory applications.

• Proceedings of the Korean Society of Computer Information Conference
• /
• 2013.07a
• /
• pp.343-344
• /
• 2013

본 연구에서는 RF sputtering법을 이용하여 Si기판 위에 SBN 박막을 증착시켜서, 온도 범위 600~800[$^{\circ}C$]에서 열처리를 하였는데, 650[$^{\circ}C$]에서 열처리된 박막의 경우 표면거칠기는 약 0.42[nm]로 나타났으며, 누설전류밀도는 전압 범위 -5~+5[V]에서 10-5[$A/cm^2$] 이하로 안정된 값을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.574-577
• /
• 2002

In recent year, BLT$(Bi_{3.25}La_{0.75}Ti_3O_{12})$ has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $(Bi_{3.25}La_{0.75}Ti_3O_{12})$ Target with a ceramic process. The BLT target was sintered at $1100^{\circ}C$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric property as a functions of post annealing time. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample for 30 minutes. This sample exhibited the (117) preferred crystal orientation, current density of $2{\times}10^{-8}A/cm^2$, a remanent polarization of $10{\mu}C/cm^2$ and a coercive field of 62.1 KV/cm respectively.

• Proceedings of the KIEE Conference
• /
• 2005.11a
• /
• pp.87-89
• /
• 2005

$Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and ferroelectric properties of the BYT thin films. Increasing the annealing temperature, the peak intensity of (117) increased and c-axis orientation decreased. The BYT thin films crystallized well at $600^{\circ}C$ for 30min. No secondary phases observed in the XRD pattern. At annealing temperature of $700^{\circ}C$, the thin films had no cracks and the grain was uniform. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The remnant polarization of the $Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$ capacitor reached $1.8uC/cm^2$ at an applied field about 400kV/cm. The BYT thin films can be used as capacitors in Ferroelectric Random Access Memory device.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.257-257
• /
• 2016

최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.