A Study on Electric Property of BLT thin films as a function of the Post Annealing Time

열처리 시간에 따른 BLT 박막의 전기적 특성에 관한 연구

  • 김응권 (성균관대학교 정보통신대학원 전자소자연구실) ;
  • 김현덕 (성균관대학교 정보통신대학원 전자소자연구실) ;
  • 최장현 (성균관대학교 정보통신대학원 전자소자연구실) ;
  • 김홍주 (성균관대학교 정보통신대학원 전자소자연구실) ;
  • 송준태 (성균관대학교 정보통신대학원 전자소자연구실)
  • Published : 2002.07.08

Abstract

In recent year, BLT$(Bi_{3.25}La_{0.75}Ti_3O_{12})$ has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $(Bi_{3.25}La_{0.75}Ti_3O_{12})$ Target with a ceramic process. The BLT target was sintered at $1100^{\circ}C$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric property as a functions of post annealing time. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample for 30 minutes. This sample exhibited the (117) preferred crystal orientation, current density of $2{\times}10^{-8}A/cm^2$, a remanent polarization of $10{\mu}C/cm^2$ and a coercive field of 62.1 KV/cm respectively.

Keywords