• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.98-102
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• 2008

The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at $650^{\circ}C$ were 29 and $23\;{\mu}C/cm^2$, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.368-369
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• 2006

Ferroelectric thin films have attracted much attention for applications in nonvolatile ferroelectric random access memories(NVFeRAM) from the view points of high speed operation, low power consumption, and large scale Integration[1,2]. Among the FRAM, BLT is of particular interest. as it is not only crystallized at relatively low processing temperature, but also shows highly fatigue resistance and large remanent polarization Meanwhile, these submicron ferroelectric capacitors were fabricated by a damascene process using Chemical mechanical polishing (CMP). BLT capacitors were practicable by a damascene process using CMP. The P-E hysteresis were measured under an applied bias of ${\pm}5V$ by using an RT66A measurement system. The electric properties such as I-V were determined by using HP4155A analysers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.719-722
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• 2004

In this work, we applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film. We compared the structural characteristics of BST $(Ba_{0.6}Sr_{0.4}TiO_3)$ films before and after the CMP process. Their dependence on slurry composition was also investigated. Finally, we suggest the self-developed titania $(TiO_2)$ mixed abrasive slurry (MAS) for FRAM applications. Our experimental results on the ferroelectric film are encouraging for the next generation of FRAM applications.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.6
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.596-600
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• 1998

A method for the nondestructive read-out of the memory in ferroelectric thin films is demonstrated using the detection second harmonic currents introduced in the ferrolelectric capacitor as a response to an ac signal. The sign and phase of the second harmonic current depends on the polarized state +$P_r or -P_r$, The studied ferroelectric PZT thin film is found to have desirable features for the use as a memory element. This method and material seems as a promising approach for the nonvolatile memory storage.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.107-108
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• 2006

In this work, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) ferroelectric film was fabricated by the sol-gel method. However, there have been serious problems in CMP in terms of repeatability and defects in patterned wafer. Especially, dishing & erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the lifetime of the semiconductor. Cross-sections of the wafer before and after CMP were examined by Scanning electron microscope(SEM). Process characteristics of non-dishing and erosion were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.140-141
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• 2007

To fabricate the metal-ferroelectric-insulator-semiconductor (MFIS) structure for the ferroelectric random access memory (FRAM) application, we prepared the ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ (SBT) and the insulator LaZrOx (LZO) thin films on the silicon substrate using a sol-gel method. In this study, we will investigate the feasibility of the SBT/LZO/Si structure as one of the promising gate configuration for the 1-transistor (1-T) type FRAM, by measurements of the electrical properties and the physical properties.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2211-2212
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.579-580
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) Precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately 60fm. And the densification of the PZT thick films increased with increasing the number of sol coatings.