• Nuclear Engineering and Technology
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• v.5 no.2
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• pp.77-82
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• 1973

A method of obtaining the partition function for a system of electrons is developed by defining a new density matrix, in which the Fermi statistics is explicitly incorporated. The corresponding Bloch equation is formulated and a practical method of solving the equation is obtained for weak potential. This theory is applied to structurally disordered ststems which might be reasonable models for liquid metals.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1612-1618
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• 2018

In this work, the ground-state properties of an interacting electron gas confined in a two-dimensional quantum dot system with the Gaussian potential ${\upsilon}(r)=V_0(1-{\exp}(-r^2/p))$, where $V_0$ and p are confinement parameters, are determined numerically by using the Thomas-Fermi approximation. The shape of the potential is modified by changing the $V_0$ and the p values, and the influence of the confining potential on the system's properties, such as the chemical energy, the density profile, the kinetic energy, the confining energy, etc., is analyzed for both the non-interacting and the interacting cases. The results are compared with those calculated for a harmonic potential, and excellent agreement is obtained in the limit of high p values for both the non-interacting and the interacting cases.

• Nuclear Engineering and Technology
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• v.10 no.3
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• pp.127-136
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• 1978

We have applied the temperature dependent Thomas-Fermi theory to evaluate the equations of state, chemical potentials, entropies, % ionizations, total energies and kinetic energies of an atom, and seveal thermodynamic quantifies of one of metallic substance, Na, for a density range of 0.1$\rho$$_{0}$ ~ 10$\rho$$_{0}$, where $\rho$$_{0}$ is the normal density of Na at its melting point, and for a temperature range of 60.88Ryd. ~0.0216 Ryd., where the system is expected to be in a gaseous or liquid state. The main interest of present work lies in physical quantities at high temperatures and high densities, however, we have included those quantities of Na at sufficiently low temperatures and low densities to show that the approximation is not so crude as one might expect. Particularly, at high temperatures, the calculated equations of state, kinetic energies of an atom, chemical potentials and entropies are compared with those, of an ideal Fermi gas. The results show that, at high temperatures, the agreement seems good for chemical Potentials. However, the differences in, entropy, kinetic energy of an atom, and equation of state are not negligible even at such high temperature as $textsc{k}$T=60.88Ryd.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.29-32
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• 2000

In this paper, an analytical model for I-V characteristics of a HEMTs is Proposed. The developed model takes into account the temperature dependence of drain current. In high-speed ICs for optical communication systems and mobile communication systems, temperature variation affects performance; for example the gain, efficiency in analog circuits and the delay time, power consumption and noise mrgin in digital circuits. To design such a circuit taking into account the temperature dependence of the current-voltage characteristic is indispensible. This model based on the analytical relation between surface carrier density and Fermi potential including temperature dependent coefficients.

• Journal of Magnetics
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• v.13 no.1
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• pp.7-10
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• 2008

The structural and magnetic properties of functionalized carbon chains doped with 4d transition metals, such as Ru, Rh, and Pd, were investigated using the full-potential linearized augmented plane wave (FLAPW) method. The carbon nanowire doped with Ru exhibited a ferromagnetic ground state with a sizable magnetic moment, while those doped with Rh and Pd had nonmagnetic ground states. For the Ru-doped chain, the density of states at the Fermi level showed large spin polarization, which suggests that the doped nanowire could be used for spintronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.11-11
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• 2011

In this talk, I will discuss roles of pseudo vector and scalar potential in changing physical properties of graphene systems. First, graphene under small uniaxial strain is shown to be described by the generalized Weyl's Hamiltonian with inclusion of pseudo vector and scalar potential simultaneously [1]. Thus, strained graphene is predicted to exhibit velocity anisotropy as well as work function enhancement without any gap. Second, if homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap [2]. This phenomenon is made possible by generation of inequivalent pseudo scalar potentials in the two graphene layers. Third, when very tiny lateral interlayer shift occurs in bilayer graphene, the Fermi surfaces of the system are shown to undergo Lifshitz transition [3]. We will show that this unexpected hypersensitive electronic topological transition is caused by a unique interplay between the effective non-Abelian vector potential generated by sliding motions and Berry's phases associated with massless Dirac electrons.

• Journal of Magnetics
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• v.7 no.4
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• pp.132-137
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• 2002

The electronic structures and magnetism of the non-oxide perovskite MgCFe$_3$(001) surface were investigated by using the all-electron full-potential linearized augmented plane wave (FLAPW) method within the generalized gradient approximation (GGA). We considered both of the MgFe terminated (MgFe-Term) and the CFe terminated (CFe-Term) surfaces. We found that the minority spin d-bands of Fe(S) of the MgFe-Term are strongly localized and Fermi level (EF) lies just below the sharp peak of the minority spin d-band of Fe(S), while the minority spin d-bands of Fe(S) of the CFe-Term are not localized much and Fermi level (E$_F$) lies in the middle of two peaks of the minority spins. The majority Fe(S) d-band width of MgFe- Term is narrower than that of the CFe-Term. It is found that the magnetic moment of Fe(S) of the MgFe- Term is 2.51 ${\mu}$$_B$, which is much larger than that of 1.97 ${\mu}$$_B$ of the CFe-Term.

• Bulletin of the Korean Chemical Society
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• v.32 no.6
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• pp.1980-1984
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• 2011

A temperature- and coverage-dependant quasi-reversible change in two-photon photoemission (2PPE) of chemisorbed 1-phenyl-1-propyne (PP) on Cu(111) is reported. For PP on Cu(111) at 300 K probed at a photon energy of 4.13 eV, two broad peaks of comparable intensity show final state energies of 7.25 and 7.75 eV above the Fermi level. The former peak could be assigned to the first image potential state (IS, n = 1) and/or unoccupied molecular orbital (UMO), located at 3.1 eV above the Fermi level. The latter is plausibly attributed to a mix of unoccupied higher-order IS (and/or UMO) and occupied surface state (SS) of Cu(111). With decreasing the temperature, the former 2PPE peak shows a shift in position by about 0.2 eV, and the latter exhibits a dramatic increase in intensity. In the system, intermolecular interactions (and/or order-disorder transition) of PP and substrate lattice temperature may play a significant role in change in photoexcitation lifetime (or excitation cross-section), and the unoccupied molecular orbital (UMO)-metal (IS) charge transfer coupling. Our unique 2PPE results provide a deeper insight for understanding photoexcitation charge transfer with temperature in an organic molecule/metal system.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.12-15
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• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.