• Journal of Astronomy and Space Sciences
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• v.33 no.4
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• pp.319-321
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• 2016

Reviewing the two MeV-GeV investigations in the field of the HESS J1745-303 performed using Fermi Large Area Telescope data, we confirmed that the emission peak comfortably coincides with 'Region A' in the TeV regime, which is the brightest part of this feature. The MeV-TeV spectrum can be precisely described by a single power-law. Also, recent investigation has shown that the MeV-GeV feature is elongated from 'Region A' toward the north-west, which is similar to the case of largescale atomic/molecular gas distribution.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.24-24
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• 2003

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.63-69
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• 1996

D.c conductivity and optical transmittance of amorphous ($As_2Se_3$)Ag, (x =0, 2, 5, 10mol%) thin films were measured in order to find effects of Ag additives on electrical and optical properties of the films. The d.c. activation energy and the optical gap decreased with increasing Ag contents the Urbach tail was approximately unchangeable for variation of Ag contents. For Ag contents of 5mol% and less, the rate of decrease of the d.c activation energy was more rapidly than that of the optical gap with increasing Ag contents. For Ag contents more than 5mol%, the rate of decrease of the d.c activation energy and the optical gap were nearly the same each other with decreasing Ag contents. So it was appeared that the Fermi level of the films comes close to the mobility edge for Ag contents of 5mol% and less, and the mobility edge comes close the Fermi level for Ag contents more than 5mol%.

• Progress in Superconductivity
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• v.12 no.2
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• pp.99-103
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• 2011

We performed angle resolved photoelectron spectroscopy (ARPES) studies on Ru doped $BaFe_2As_2$ with various Ru contents. Ru, which is doped into a parent compound $BaFe_2As_2$ and substitute Fe, does not donate or accept electrons. However, it induces superconductivity. From ARPES data along the high symmetry cuts and Fermi surface maps, we investigate the electron correlation and carrier density at the Fermi level. We observe that the Fermi velocity increases with Ru doping, suggesting reduction in electron correlation. In addition, we address issues on local vs. itinerant pictures for the magnetism in $BaFe_2As_2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.108-111
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• 2009

We have determined the electronic energy level alignment at the interface between 4,4'-bis-N-phenyl-1-naphthylamino biphenyl (NPB) and 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HAT-CN) using ultraviolet photoelectron spectroscopy (UPS). The highest occupied molecular orbital (HOMO) of 20 nm thick HAT-CN film was located at 3.8 eV below the Fermi level. Thus the lowest unoccupied molecular orbital (LUMO) is very close to the Fermi level. The HOMO position of NPB was only about 0.3 eV below Fermi level at NPB/HAT-CN interface. This enables an easy excitation of electrons from the NPB HOMO to the HAT-CN LUMO, creating electron-hole pairs across this organic-organic interface. We also study the interaction of HAT-CN with a few metallic surfaces including Ca, Cu, and ITO using UPS and ab-inito electronic structure calculation techniques.

• Progress in Superconductivity
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• v.14 no.1
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• pp.11-16
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• 2012

Based on fully self-consistent dynamical mean field theory (DMFT) method, we investigate electronic structure and Fermi surface nesting property of LiFeAs and NaFeAs, focusing on the correlation effect of iron 3d orbital. For LiFeAs, good nesting property by density functional theory (DFT) method is much suppressed by DFT+DMFT method due to the orbital-dependent renormalization magnitude. NaFeAs shows a similar behavior, but a better nesting is obtained than LiFeAs from DFT+DMFT Fermi surfaces. Our result is consistent with the observed superconducting (spin density wave) ground state of LiFeAs (NaFeAs).

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.477-482
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• 2019

The magnetic properties and electronic structures of the B20 crystal structure MnGe and MnSi were investigated using the density functional theory with local density approximation. The low symmetry of the B20 crystal structure plays a very important role to make electromagnetic characteristics of these materials. The important result of the calculations is that it can be observed the appearance of a pair of gaps in the density of states near the Fermi level in both compounds. These features are results from d-band splitting by the low symmetry of the crystal field from B20 crystal structure. It can be seen that there is half-metallic characteristics from the density of states in both compounds. The calculation shows that the value of magnetic moment of MnGe is 5 times bigger than that of MnSi even though they have same crystal structure. The electronic structures of paramagnetic case have a very narrow indirect gap just above the Fermi level in both compounds. These gaps acquire some significance in establishing the stability of the ferromagnetic states within the local density approximation. Calculation shows that the Mn 3d character dominates the density of states near the Fermi level in both materials.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.679-682
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• 2005

Negative-differential conductance (NDC) characteristics as well as negative-differential trans-conductance (NDT) characteristics have been observed in the room temperature I-V characteristics of Field-induced Inter-band Tunneling Effect Transistors (FITETs). These characteristics have been explained with inter-band tunneling physics, from which, inter-band tunneling current flows when the energy bands of degenerately doped regions align, and it does not flow when they don't. FITET is an SOI device and the body region is not directly connected to the external terminal. Therefore, Fermi energy in the body region is determined by electrical coupling among four regions - gate, source, drain and substrate. So, a quasi Fermi energy of the majority carriers in the floating body region can be changed by external voltages, and this causes the energy band movements in the body region, which determine whether the energy bands between degenerately doped junctions aligns or not. This is a key point for an explanation of NDT and NDC characteristics. In this paper, a quasi Fermi energy movement in the floating body region of FITET was investigated by a device simulation. This result was applied for the description of relation between quasi Fermi energy in the body region and external gate bias voltage.

• Nuclear Engineering and Technology
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• v.10 no.3
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• pp.127-136
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• 1978

We have applied the temperature dependent Thomas-Fermi theory to evaluate the equations of state, chemical potentials, entropies, % ionizations, total energies and kinetic energies of an atom, and seveal thermodynamic quantifies of one of metallic substance, Na, for a density range of 0.1$\rho$$_{0}$ ~ 10$\rho$$_{0}$, where $\rho$$_{0}$ is the normal density of Na at its melting point, and for a temperature range of 60.88Ryd. ~0.0216 Ryd., where the system is expected to be in a gaseous or liquid state. The main interest of present work lies in physical quantities at high temperatures and high densities, however, we have included those quantities of Na at sufficiently low temperatures and low densities to show that the approximation is not so crude as one might expect. Particularly, at high temperatures, the calculated equations of state, kinetic energies of an atom, chemical potentials and entropies are compared with those, of an ideal Fermi gas. The results show that, at high temperatures, the agreement seems good for chemical Potentials. However, the differences in, entropy, kinetic energy of an atom, and equation of state are not negligible even at such high temperature as $textsc{k}$T=60.88Ryd.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.40-41
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• 2009