• Title/Summary/Keyword: Feedback circuit

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High-Accuracy Current Mirror Using Adaptive Feedback and its Application to Voltage-to-Current Converter (적응성 귀환을 이용한 고정도 전류 미러와 이를 이용한 전압-전류 변환기)

  • Cha, Hyeong-U;Kim, Hak-Yun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.4
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    • pp.93-103
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    • 2002
  • A new current mirror for high-accuracy current-mode signal processing and integrated circuit design was proposed. The current mirror adopts the technique of an adaptive feedback to reduce the input impedance and the output stage of regulated cascode current mirror to increase the output impedance. Simulation results show that the current mirror has input impedance of 0.9Ω, the output impedance of 415 MΩ, and current gain of 0.96 at the supply voltage Vcc=5V. The power dissipation is 1.5㎽. In order to certify the applicability of the proposed current mirror, a voltage-to-current converter using the current mirror is designed. Simulation results show that the converter has good agreement with theoretical equation and has three times better conversion characteristics when compared with voltage-to-current converter using Wilson current mirror.

Reduced-order Mapping and Design-oriented Instability for Constant On-time Current-mode Controlled Buck Converters with a PI Compensator

  • Zhang, Xi;Xu, Jianping;Wu, Jiahui;Bao, Bocheng;Zhou, Guohua;Zhang, Kaitun
    • Journal of Power Electronics
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    • v.17 no.5
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    • pp.1298-1307
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    • 2017
  • The constant on-time current-mode controlled (COT-CMC) switching dc-dc converter is stable, with no subharmonic oscillation in its current loop when a voltage ripple in its outer voltage loop is ignored. However, when its output capacitance is small or its feedback gain is high, subharmonic oscillation may occur in a COT-CMC buck converter with a proportional-integral (PI) compensator. To investigate the subharmonic instability of COT-CMC buck converters with a PI compensator, an accurate reduced-order asynchronous-switching map model of a COT-CMC buck converter with a PI compensator is established. Based on this, the instability behaviors caused by output capacitance and feedback gain are investigated. Furthermore, an approximate instability condition is obtained and design-oriented stability boundaries in different circuit parameter spaces are yielded. The analysis results show that the instability of COT-CMC buck converters with a PI compensator is mainly affected by the output capacitance, output capacitor equivalent series resistance (ESR), feedback gain, current-sensing gain and constant on-time. The study results of this paper are helpful for the circuit parameter design of COT-CMC switching dc-dc converters. Experimental results are provided to verify the analysis results.

Variable-Speed Prime Mover Driving Three-Phase Self-Excited Induction Generator with Static VAR Compensator Voltage Regulation -Part I : Theoretical Performance Analysis-

  • Ahmed, Tarek;Nagai, Schinichro;Soshin, Koji;Hiraki, Eiji;Nakaoka, Mutsuo
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • v.3B no.1
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    • pp.1-9
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    • 2003
  • This paper deals with the nodal admittance approach steady-state frequency domain analysis of the three-phase self-excited induction generator (SEIG) driven by the variable speed prime mover as the wind turbine. The steady-state performance analysis of this power conditioner designed for the renewable energy is based on the principle of equating the input mechanical power of the three-phase SEIG to the output mechanical power of the variable speed prime mover mentioned above. Us-ing the approximate frequency domain based equivalent circuit of the three-phase SEIG. The main features of the present algorithm of the steady-state performance analysis of the three-phase SEIG treated here are that the variable speed prime mover characteristics are included in the approximate equivalent circuit of the three-phase SEIG under the condition of the speed changes of the prime mover without complex computations processes. Furthermore, a feedback closed-loop voltage regulation of the three-phase SEIG as a power conditioner which is driven by variable speed prime movers such as the wind turbine(WT) employing the static VAR compensator(SVC) circuit composed of the thyristor phase controlled reactor(TCR) and the thyristor switched capacitor(TSC) controlled by the PI controller is designed and considered for wind-turbine driving power conditioner.

Analysis of Leakage Current of a Laser Diode by Equivalent Circuit Model (등가회로 모델에 의한 레이저다이오드의 누설전류 해석)

  • Choi, Young-Kyu;Kim, Ki-Rae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.2
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    • pp.330-336
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    • 2007
  • A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

A Process Detection Circuit using Self-biased Super MOS composit Circuit (자기-바이어스 슈퍼 MOS 복합회로를 이용한 공정 검출회로)

  • Suh Benjamin;Cho Hyun-Mook
    • Journal of the Institute of Convergence Signal Processing
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    • v.7 no.2
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    • pp.81-86
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    • 2006
  • In this paper, a new process detection circuit is proposed. The proposed process detection circuit compares a long channel MOS transistor (L > 0.4um) to a short channel MOS transistor which uses lowest feature size of the process. The circuit generates the differential current proportional to the deviation of carrier mobilities according to the process variation. This method keep the two transistor's drain voltage same by implementing the feedback using a high gain OPAMP. This paper also shows the new design of the simple high gam self-biased rail-to-rail OPAMP using a proposed self-biased super MOS composite circuit. The gain of designed OPAMP is measured over 100dB with $0.2{\sim}1.6V$ wide range CMR in single stage. Finally, the proposed process detection circuit is applied to a differential VCO and the VCO showed that the proposed process detection circuit compensates the process corners successfully and ensures the wide rage operation.

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High-speed CMOS Frequency Divider with Inductive Peaking Technique

  • Park, Jung-Woong;Ahn, Se-Hyuk;Jeong, Hye-Im;Kim, Nam-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.309-314
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    • 2014
  • This work proposes an integrated high frequency divider with an inductive peaking technique implemented in a current mode logic (CML) frequency divider. The proposed divider is composed with a master-slave flip-flop, and the master-slave flip-flop acts as a latch and read circuits which have the differential pair and cross-coupled n-MOSFETs. The cascode bias is applied in an inductive peaking circuit as a current source and the cascode bias is used for its high current driving capability and stable frequency response. The proposed divider is designed with $0.18-{\mu}m$ CMOS process, and the simulation used to evaluate the divider is performed with phase-locked loop (PLL) circuit as a feedback circuit. A divide-by-two operation is properly performed at a high frequency of 20 GHz. In the output frequency spectrum of the PLL, a peak frequency of 2 GHz is obtained witha divide-by-eight circuit at an input frequency of 250 MHz. The reference spur is obtained at -64 dBc and the power consumption is 13 mW.

Integrated Circuit Design and Implementation of a Novel CMOS Neural Oscillator using Variable Negative Resistor (가변 부성저항을 이용한 새로운 CMOS 뉴럴 오실레이터의 집적회로 설계 및 구현)

  • 송한정
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.40 no.4
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    • pp.275-281
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    • 2003
  • A new neural oscillator has been designed and fabricated in an 0.5 ${\mu}{\textrm}{m}$ double poly CMOS technology. The proposed neural oscillator consists of a nonlinear variable resistor with negative resistance as well as simple transconductors and capacitors. The variable negative resistor which is used as a input stage of the oscillator consists of a positive feedback transconductors and a bump circuit with Gaussian-like I-V curve. The proposed neural oscillator has designed in integrated circuit with SPICE simulations. Simulations of a network of 4 oscillators which are connected with excitatory and inhibitory synapses demonstrate cooperative computation. Measurements of the fabricated oscillator chip with a $\pm$ 2.5 V power supply is shown and compared with the simulated results.

The Design of a Low Power and Wide Swing Charge Pump Circuit for Phase Locked Loop (넓은 출력 전압 범위를 갖는 위상동기루프를 위한 저전압 Charge Pump 회로 설계)

  • Pu, Young-Gun;Ko, Dong-Hyun;Kim, Sang-Woo;Park, Joon-Sung;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.8
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    • pp.44-47
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    • 2008
  • In this paper, a new circuit is proposed to minimize the charging and discharging current mismatch in charge pump for UWB PLL application. By adding a common-gate and a common-source amplifier and building the feedback voltage regulator, the high driving charge pump currents are accomplished. The proposed circuit has a wide operation voltage range, which ensures its good performance under the low power supply. The circuit has been implemented in an IBM 0.13um CMOS technology with 1.2V power supply. To evaluate the design effectiveness, some comparisons have been conducted against other circuits in the literature.

CMOS Symmetric High-Q 2-Port Active Inductor (높은 Q-지수를 갖는 대칭 구조의 CMOS 2 단자 능동 인덕터)

  • Koo, Jageon;Jeong, Seungho;Jeong, Yongchae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.10
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    • pp.877-882
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    • 2016
  • In this paper, a novel CMOS high Q factor 2-port active inductor has been proposed. The proposed circuit is designed by cascading basic gyrator-C structural active inductors and attaching the feedback LC resonance circuit. This LC resonator can compensate parasitic capacitance of transistor and can improve Q factor over wide frequency range. The proposed circuit was fabricated and simulated using 65 nm Samsung RF CMOS process. The fabricated circuit shows inductance of above 2 nH and Q factor higher than 40 in the frequency range of 1~6 GHz.

An Input-Powered High-Efficiency Interface Circuit with Zero Standby Power in Energy Harvesting Systems

  • Li, Yani;Zhu, Zhangming;Yang, Yintang;Zhang, Chaolin
    • Journal of Power Electronics
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    • v.15 no.4
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    • pp.1131-1138
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    • 2015
  • This study presents an input-powered high-efficiency interface circuit for energy harvesting systems, and introduces a zero standby power design to reduce power consumption significantly while removing the external power supply. This interface circuit is composed of two stages. The first stage voltage doubler uses a positive feedback control loop to improve considerably the conversion speed and efficiency, and boost the output voltage. The second stage active diode adopts a common-grid operational amplifier (op-amp) to remove the influence of offset voltage in the traditional comparator, which eliminates leakage current and broadens bandwidth with low power consumption. The system supplies itself with the harvested energy, which enables it to enter the zero standby mode near the zero crossing points of the input current. Thereafter, high system efficiency and stability are achieved, which saves power consumption. The validity and feasibility of this design is verified by the simulation results based on the 65 nm CMOS process. The minimum input voltage is down to 0.3 V, the maximum voltage efficiency is 99.6% with a DC output current of 75.6 μA, the maximum power efficiency is 98.2% with a DC output current of 40.4 μA, and the maximum output power is 60.48 μW. The power loss of the entire interface circuit is only 18.65 μW, among which, the op-amp consumes only 2.65 μW.