• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Journal of Electrochemical Science and Technology
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• v.2 no.4
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• pp.193-197
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• 2011

The influences of the thickness and microstructure of Fe layer on the electrochemical performances of Fe/Si multilayer thin film anodes were investigated. The Fe/Si multilayer films were prepared by electron beam evaporation, in which Fe layer was deposited with/without simultaneous bombardment of Ar ion. The kinetics of Li insertion/extraction reactions in the early stage are slowed down with increasing the thickness of Fe layer, but such a slowdown seems to be negligible for thin Fe layers less than about $500{\AA}$. When the Fe layer was deposited with ion bombardment, even the $300{\AA}$ thick Fe layer significantly suppress Li diffusion through the Fe layer. This is attributed to the dense microstructure of Fe layer, induced by ion beam assisted deposition (IBAD). It appears that the Fe/Si multilayer films prepared with IBAD show good cyclability compared to the film deposited without IBAD.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.584-584
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• 2000

Electronic structures of ordered Fe$_3X (X = Al, Si), and their derivative ternary alloys of Fe_2TX (T = 3d transition metal) have been investigated by using the linearized muffin-tin orbital (LMTO) band method. The role of the coupling between substituted transition metal and its neighbors is investigated by calculating the magnetic moments and local density of states (LDOS). It is shown that it is essential to include the coupling beyond nearest neighbors in obtaining the magnetic moment of Fe alloy. The preferential sites of T impurities in Fe_3X are determined from the total energy calculations. The derivative ternary alloys of Fe_2TX have characteristic electronic structures of semi-metal for Fe_2VAI and (nearly) half-metal for Fe_2TAI (T = Cr, Mn) and Fe_2TSi (T = V, Cr, Mn)

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.1-8
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• 2017

Fe-9.8Si-6.0Al mother alloy was manufactured using by Fe-3.5Si recycled scrap and Si powder. And then, soft magnetic alloy powder of $D_{50}$ size and sphere type were prepared by gas atomization process. To obtain the soft magnetic powder of a high aspect ratio, in the first, we conducted the ball milling process for 8 hours. And heat treatment was performed under $650^{\circ}C$, 2 hours and $N_2$ atmosphere condition for reducing the residual stress of the powder. Based on these process, we made around $50{\mu}m$ diameter Fe-9.8Si-6.0Al powder, which morphology and shape was a similar to the commercial Fe-Si-Al powder. Finally, the soft magnetic sheets were prepared by tape casting process using by those powders. The permeability of the tape casting sheet was measured, and we confirmed the possibility of reusing to the soft magnetic materials of Fe-Si electric sheet scrap.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.1-6
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• 2007

This study investigated the magnetic properties of $Ni_{80}Fe_{20}/SiO_2$ laminates with shape-induced magnetic anisotropy. The multilayer films were deposited on Si or upilex substrates, from separate $Ni_{80}Fe_{20}$ and $SiO_2$ (at %) alloy targets using a rf diode sputtering system. $Ni_{80}Fe_{20}/SiO_2$ laminates with a various number of bilayers (N) were prepared. The laminates with ellipse array patterns were prepared using photolithographic technique. The magnetic properties were measured at room temperature using a B-H hysteresisgraph and a high frequency permeameter. The several steps during domain wall reversal were observed in multilayer films, attributing to inter-magnetic layer coupling. Intrinsic uniaxial anisotropy field increases with N. The experimental values of the total anisotropy field are found to be in good agreement with the calculated values. This study utilized the shape anisotropy of the laminated film objects with small ellipse array patterns to induce a larger uniaxial anisotropy so as to maximize their operating frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2000.04a
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• pp.16-16
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• 2000

분무주조법으로 제조된 Al-25Si-(Fe,V) 합금빌렛의 미세조직을 광학현미경, 주사전자현미경, 투과전자현미경으로 분석하였으며, 빌렛내에서 관찰되는 2차상의 형성거동을 정확히 분석하기 위해 over-sprayed 분말의 미세조직을 분무주조 빌렛과 함께 관찰하였다. 먼저 분무주조 빌렛을 표면으로부터 중심부까지 관찰한 결과, 분무주조 빌렛의 미세조직은 표면부 10mm 가량을 제외하고는 매우 균일한 미세조직을 보여주었다. 이에 본 연구에서는 분무주조 빌렛의 표면부와 중심부, 그리고 over-sprayed 분말조직으로 구분하여 각각에서 관찰되는 2차상을 관찰하였으며, 이를 바탕으로 분무주조 빌렛내에 형성된 2차상의 형성기구를 규명하고자 하였다. Over-sprayed 분말의 미세조직은 기지조직내에 균일하게 분포된 침상의 $\delta$-AlFeSi 상과 각형의 Si 입자로 구성되어 있었다. 반면, 분무주조 빌렛의 경우, 그 중심부에서는 기자조직내에 균일하게 분포된 막대형의 $\beta$-AlFeSi과 부정형의 조대한 Si입자가 관찰되었으며, 표면부에서는 부정형의 Si 입자와 함께 막대형의 $\beta$-AlFeSi/$\delta$-AlFeSi 복합상이 관찰되었다. 특히, 빌렛 표면부의 $\beta$-AlFeSi 상과 $\delta$-AlFeSi 상간에는 일정한 방위관계가 존재하였으며, 이러한 결과는 분무주조 빌렛내에 분포된 $\beta$-AlFeSi상들이 분무액적내에 형성된 준안정 $\delta$-AlFeSi 상으로부터 상분해되어 형성되었음을 제시한다. 이상의 분무주조 조직과 over-sprayed 분말의 미세조직으로부터 분무주조 빌렛의 최종 주조조직은 반응고상태의 분무액적 조직에 의해 지배됨을 알 수 있다.r plate)의 단면 미세조직 사진으로써 모재부와 오버레이충을 함께 보여주고 있다. 모재와 오버레이 충간의 경계면은 모재 일부가 용융된 후 웅고하면서 형성됨으로 인해서 도금이나 용사층과는 달리 매우 견고하게 결합되어 있다. 따라서 계면부의 탈락이라는 문 제점은 거의 없어 심한 응력을 받는 기계구조물 및 부품에도 본 기술은 널리 적용되고 있다. 그리고 사진 1에서 알 수 있는 바와 같이 모재와는 전혀 상이한 재료를 자유로이 선택하여 표면 유효층 일부만 오버레이시키며I 주조 및 단조가 불가능한 재료까지도 표면부에 오버레이 시킴으로 서 부품 및 설비의 제조에 있어 재료비의 절감과 제품의 수명이 획기적으로 개선될 수 있다. 그리고 최근에는 도금 빛 용사 둥과 같은 표면처리를 할 경우임의 소재 표면에 도금 및 용 사에 용이한 재료를 오버레이용접시킨 후 표면처리를 함으로써 보다 고품질의 표면층을 얻기위한 시도가 이루어지고 있다. 따라서 국내, 외의 오버레이 용접기술의 적용현황 및 대표적인 적용사례, 오버레이 용접기술 및 용접재료의 개발현황 둥을 중심으로 살펴봄으로서 아직 국내에서는 널리 알려지지 않은 본 기 술의 활용을 넓이고자 한다. within minimum time from beginning of the shutdown.및 12.36%, $101{\sim}200$일의 경우 12.78% 및 12.44%, 201일 이상의 경우 13.17% 및 11.30%로 201일 이상의 유기의 경우에만 대조구와 삭제 구간에 유의적인(p<0.05) 차이를 나타내었다.는 담수(淡水)에서 10%o의 해수(海水)로 이주된지 14일(日) 이후에 신장(腎臟)에서 수축된 것으로 나타났다. 30%o의 해수(海水)에 적응(適應)된 틸라피아의 평균 신사구체(腎絲球體)의 면적은 담수(淡水)에 적응된 개체의 면적보다 유의성있게 나타났다. 해수(海水)에 적응(適應)된 틸라피아의 신단위(腎單位)의 사

• Journal of the Korean Chemical Society
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• v.56 no.4
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• pp.478-483
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• 2012

We successfully synthesized $Fe_3O_4/SiO_2$ nanoparticles with ultrathin silica layer of $1.0{\pm}0.5$ nm that was fine controlled by changing concentration of $Fe_3O_4$. Among various reaction conditions for silica coating, increasing concentration of $Fe_3O_4$ was more effective approach to decrease silica thickness compared to water-to-surfactant ratio control. Moreover, we found that concentration of the 1-octanol is also important factor to produce the homogeneous $Fe_3O_4/SiO_2$ nanoparticles. The present approach could be available to apply on preparation of other core/shell nanoparticles with ultrathin silica layer.