• Korean Journal of Optics and Photonics
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• v.18 no.3
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• pp.216-220
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• 2007

A widely tunable add/drop filter composed of double ring resonators is implemented with high-index-contrast polymer waveguide. To enhance the productivity, directional couplers are designed to have good fabrication tolerance. The refractive indices of the core and cladding in the 1550 nm wavelength are 1.51 and 1.378, respectively. Drop response in comparison with neighborhood peak gets enhanced by more than 2.9 dB at the wavelength where both rings resonate. This filter can be used to build widely tunable laser diode through hybrid-integration with reflective SOA.

• Nuclear Engineering and Technology
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• v.50 no.2
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• pp.253-258
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• 2018

A microcell $UO_2$ pellet, as an accident-tolerant fuel pellet, is being developed to enhance the accident tolerance of nuclear fuels under accident conditions as well as the fuel performance under normal operation conditions. Improved capture-ability for highly radioactive and corrosive fission product (Cs and I) is the distinct feature of a ceramic microcell $UO_2$ pellet, and the enhanced pellet thermal conductivity is that of a metallic microcell $UO_2$ pellet. The fuel temperature can be effectively decreased by enhanced thermal conductivity. In this study, the material concepts of metallic and ceramic microcell $UO_2$ pellets were designed, and the fabrication process of microcell $UO_2$ pellets embodying the designed concept was developed. We successfully implemented the microcell $UO_2$ pellets and produced microcell $UO_2$ pellets. In addition, an assessment of the out-of-pile properties of a microcell $UO_2$ pellet was performed, and the in-reactor performance and behavior of the developed microcell pellets were evaluated through a Halden irradiation test. According to the expectations, the excellent performance of the microcell $UO_2$ pellets was confirmed by the online measurement data of the Halden irradiation test.

• Current Photovoltaic Research
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• v.11 no.2
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• Journal of Wind Energy
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• v.14 no.4
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• pp.50-56
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• 2023

With the abnormal weather phenomena caused by global warming, the frequency and intensity of lightning strikes are increasing, and lightning accidents are becoming one of the biggest causes of failures and accidents in offshore wind turbines. In order to secure generator operation reliability, effective and practical measures are needed to reduce lightning damage. Because offshore wind turbines are tall structures installed at sea, the possibility of direct lightning strikes is very high compared to other structures, and the role of surge protection devices to minimize damage to the electrical and electronic circuits inside the wind turbine is very important. In this study, a varistor, which is a key element for a class 1 surge protection device for direct lightning protection, was developed. The current density was improved by changing the varistor composition, and the distance between the electrode located on the varistor surface and the edge of the varistor was optimized through a simulation program to improve the fabrication process. Considering the combined effects of heat distribution, electric field distribution, and current density on the optimized varistor surface, silver electrodes were formed with a gap of 0.5 mm. The varistor developed in this study was confirmed to have an energy tolerance of 10/350 ㎲, 50kA, which is a representative direct lightning current waveform, and good protection characteristics with a limiting voltage of 2 kV or less.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.187-192
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• 2011

Tilt angle of r-plane wafer is a one of the important factors related with the quality of the GaN epi, so the fine control of the tilt angle is important for the growing of high quality non-polar a-GaN epi. We prepared the R-plane sapphire wafers with slight tilt angles for nonpolar a-plane GaN. The target tilt angles of ${\alpha}$ and ${\beta}$ were 0, -0.1, -0.15, -0.2, -0.4, $-0.6^{\circ}$ and -0.1, 0, $0.1^{\circ}$, respectively. The tilt angles of sliced R-plane sapphire wafers were measured by x-ray and the statistical evaluation of reliability of tilt angles of wafers were performed. The tolerance of the tilt angle was ${\pm}0.03^{\circ}$. R-plane sapphire wafers have relatively large distributions of BOW and TTV data than c-plane sapphire wafers due to the large anisotropy of R-plane. As the tilt angle ${\alpha}$ was increased from -0.1 to $-0.6^{\circ}$, the step widths and heights were decreased from 156 nm to 26 nm and 0.4 nm to 0.2 nm, respectively. The growth and qualities of GaN epi seems to be largely affected by the change of step structure of R-plane sapphire wafers with tilt angle.

• Journal of Korean Society of Steel Construction
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• v.25 no.4
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• pp.431-440
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• 2013

In this study, a standard tensile welded-joint test was conducted to select a welding electrode suitable for recently developed HSA800 steel. Two welding electrodes were available at the time of this study; one was GMAW-based and the other FCAW-based. The tensile test specimens were fabricated by joining 60mm-thick HSA800 plates according to the AWS-prequalified groove welded joint details. Specimens which violate the standard root opening distance (ROD) were also included to see if poor construction tolerance could be accommodated. During fabrication, serious concerns about the welding efficiency of the GMAW-based product were raised by a certified welder. Both welding electrodes showed satisfactory and similar performance from welded joint strength perspective. But groove welded joints made by using the FCAW-based rod consistently showed more ductile and stable behavior. The AISC provisions for PJP joint strength were shown to be very conservative under direct tensile loading. Violating the AWS prequalified ROD by 100% apparently passed the strength criteria, but unusual crater-like fracture surface was observed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.694-704
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• 2011

In this paper, we present a design of a 5th order Chebyshev interdigital band-pass filter using inverter and susceptance slope parameter values obtained from EM simulated multi-port Y-parameters. The shifted length of the resonator is determined when the frequency of the transmission zero is separated far away from the center frequency. For the initial dimensions of the interdigital filter, the filter is decomposed into the individual resonators, and the dimensions are obtained using EM Simulation of the decomposed resonators. However, the interdigital filter with the dimensions determined from the EM simulation of the decomposed resonators shows slightly distorted response from the desired frequency response due to the coupling between non-adjacent resonators. To obtain a EM simulation dataset, EM simulation for this filter is carried out by parameter sweep with constant ratio for the initial values. In this dataset, it is determined the final values for the filter by optimization. The fabricated filter by PCB shows an upper-shift of center frequency of about 70 MHz, which was caused by permittivity changed and tolerance of fabrication.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.1
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• pp.76-84
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• 2012

In this paper, two kinds of E-plane microstrip-to-waveguide transitions are optimally designed and fabricated for combining output power from multiple small-power amplifiers in a WR-28 waveguide because conventional K connectors cause unnecessary insertion loss and adaptor loss. The transition design is based on target specifications such as a center frequency of 35 GHz, bandwidth of ${\pm}500MHz$, 0.1 dB insertion loss and 20 dB return loss. Performance variation caused by mechanical tolerance and assembly deviation is fully evaluated by three dimensional electromagnetic simulation. The fabricated back-to-back transitions with 16 mm and 26.57 mm interstage microstrip lines show insertion loss per transition of ~0.1 dB at 35 GHz and average 0.2 dB over full Ka band. Also the back-to-back transition shows return loss greater than 15 dB, which implies that the transition itself has return loss better than 20 dB.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Korean Journal of Optics and Photonics
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• v.16 no.5
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• pp.440-445
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• 2005

The limitation of measurement accuracy and reliability of autostigmatic null lens system are studied for the cases of using inter-distance of null lenses as the adjustment factor of alignment and fixing the distance by mounting. If we investigate the first case, the wavefront aberration of null lens system is compensated by the adjustment process even though the shape of aspherical surface is not properly fabricated. As the result, it brings about the problem of measurement reliability. However, for the fixing process by mounting null lenses, it doesn't cause the reliability problem because the wavefront aberration of null lens system is not compensated. Further, the fixing process shows nearly same result in measurement accuracy to the adjustment process, that is, $0.0316{\lambda}$ vs. $0.0326{\lambda}$. So, we can conclude the setup for autostigmatic null lens system must be constituted by means of the fixing process. Meanwhile, we introduce and define the alignment aperture on aspheircal mirror, which can be approximated as spherical zone for alignment of null lens system, and besides, we calculate the required fabrication accuracy of the zone for the necessary measurement accuracy.