• KSBB Journal
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• v.24 no.1
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• pp.1-8
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• 2009

In the past decade, we have observed rapid advances in the development of biochips in many fields including medical and environmental monitoring. Biochip experiments involve immobilizing a ligand on a solid substrate surface, and monitoring its interaction with an analyte in a sample solution. Metal nanoparticles can display extinction bands on their surfaces. These charge density oscillations are simply known as the localized surface plasmon resonance (LSPR). The high sensitivity of LSPR has been utilized to design biochips for the label-free detection of biomolecular interactions with various ligands. LSPR-based optical biochips and biosensors are easy to fabricate, and the apparatus cost for the evaluation of optical characteristics is lower than that for the conventional surface plasmon resonance apparatus. Furthermore, the operation procedure has become more convenient as it does not require labeling procedure. In this paper, we review the recent advances in LSPR research and also describe the LSPR-based optical biosensor constructed with a core-shell dielectric nanoparticle biochip for its application to label-free biomolecular detections such as antigen-antibody interaction.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.61-66
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• 2012

Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.1
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• pp.53-58
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• 2008

Purpose: To design and fabricate the small sputter coating system for the Ophthalmic lens. Methods: The design of sputter target was done using macleod program for AR coating and mirror coating of Ophthalmic lens with Si target and then the sputter system was fabricated. Results: The optimum condition of AR coating with Si target was [air|$SiO_2$(81.3)|$Si_3N_4$ (102)|$SiO_2$(19.21)|$Si_3N_4$(15.95)|$SiO_2$(102)|glass], for blue color mirror coating [air|$SiO_2$(56.61)|$Si_3N_4$(135.86)|$SiO_2$(67.64)|$Si_3N_4$(55.4)|$SiO_2$(53.53)|$Si_3N_4$(51.28)|glass], for green color coating [air|$SiO_2$(66.2)|$Si_3N_4$(22.76)|$SiO_2$(56.58)|$Si_3N_4$(140.35)|$SiO_2$(152.35)|$Si_3N_4$(70.16)|$SiO_2$(121.87)|glass], for gold color [air|$SiO_2$(83.59)|$Si_3N_4$(144.86)|$SiO_2$(11.82)|$Si_3N_4$(129.93)|$SiO_2$(90.01)|$Si_3N_4$(88.37)|glass]. Conclusions: In the fabrication of sputtering coating apparatus, Dual cathode with same Ti target were coated at the same time on both sides of Ophthalmic lens to lessen the time of coating on Ophthalmic Lens and save the cost of the lens. The distance of target-substrate of cathode was variable from 12.5 cm to 20 cm. Turbo pump was used to take the whole coating process about 15 min. instead of diffusion pump. The lens holder was made to coat 2 pairs lens every coating and was rotated to get the uniformity of thin film.

• Resources Recycling
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• v.12 no.6
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• pp.38-46
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• 2003

In this study, nano-sized Ni-ferrite and $Fe_2$$O_3$＋NiO powder was fabricated by spray pyrolysis process in the condition of 1kg/$\textrm{cm}^2$ air pressure using the Fe-Ni complex waste acid solution generated during the manufacturing process of shadow mask. The average particle size of the produced powder was below 100 nm. The effects of the reaction temperature, the concentration of raw material solution and the nozzle tip size on the properties of powder were studied. As the reaction temperature increased from $800 ^{\circ}C$ to $1100^{\circ}C$, the average particle size of the powder increased from 40 nm to 100 nm, the structure of the powder gradually became solid, yet the distribution of the particle size appeared more irregular. Along with the increase of the reaction temperature, the fraction of the Ni-ferrite phase were also on the rise, and the surface area of the powder was greatly reduced. As the concentration of Fe in solution increased from 20g/l to 200g/l, the average particle size of the powder gradually increased from 30 nm to 60 nm, while the distribution of the particle size appeared more irregular. Along with the increase of the concentration of solution, tie fraction of the Ni-ferrite phase was on the rise, and the surface area of the powder was greatly reduced. Along with the increase of the nozzle tip size, the distribution of the particle size appeared more irregular, yet the average particle size of the powder showed no significant change. As the nozzle tip size increased from 1 mm to 2 mm, the fraction of the Ni-ferrite phase showed no significant change, while the surface area of the powder slightly reduced. As the nozzle tip size increased to 3 mm and 5 mm, the fraction of the Ni-ferrite phase gradually reduced, and the surface area of the powder slightly increased.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.9
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• pp.14-23
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• 2010

This paper reports the fabrication of a DVB-T/H System in Package (SiP) that is able to receive and process the DVB-T/H signal. The DVB-T/H is the European telecommunication standard for Digital Video Broadcasting (DVB). An IC-embedded Printed Circuit Board (PCB) process, interpose a chip between PCB layers, has applied to the DVB-T/H SiP. The chip inserted in DVB-T/H SiP is the System on Chip (SoC) for mobile TV. It is comprised of a RF block for DVB-T/H RF signal and a digital block to convert received signal to digital signal for an application processor. To operate the DVB-T/H IC, a 3MHz DC-DC converter and LDO are on the DVB-T/H SiP. And a 38.4MHz crystal is used as a clock source. The fabricated DVB-T/H SiP form 4 layers which size is $8mm{\times}8mm$. The DVB-T/H IC is located between 2nd and 3rd layer. According to the result of simulation, the RF signal sensitivity is improved since the layout modification of the ground plane and via. And we confirmed the adjustment of LC value on power transmission is necessary to turn down the noise level in a SiP. Although the size of a DVB-T/H SiP is decreased over 70% than reference module, the power consumption and efficiency is on a par with reference module. The average power consumption is 297mW and the efficiency is 87%. But, the RF signal sensitivity is declined by average 3.8dB. This is caused by the decrease of the RF signal sensitivity which is 2.8dB, because of the noise from the DC-DC converter.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.105-110
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• 2008

We have proposed a new structure of poly-silicon thin film transistor(TFT) which was fabricated the LDD region using doping oxide with graded spacer by etching shape retio. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $HT_2$/plasma processes are fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring /analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si Brain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplity of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• Korean Chemical Engineering Research
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• v.52 no.5
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• pp.667-671
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• 2014

In this study, we suggest a facile method to control conditions of single component independently when preparing consisting two-component metal oxides nanofiber by simply dispersing nanoparticles in precursor solution. The well dispersed $SiO_2$ nanoparticles in $TiO_2$ nanofibers were successfully synthesized through a simple electrospinning process. The as-synthesized nanodfibers were investigated via FE-SEM, XRD and EDS for structural studies, furthermore, the analysis of UV-VIS and photocatalytic activity were carried out for demonstrate the effect of $SiO_2$ nanoparticles dispersed in $TiO_2$ nanofibers. As a result, $TiO_2$ nanofibres dispersed with $SiO_2$ nanoparticles have enhanced photocatalytic activity than that of $TiO_2$ nanofibres only. In this strategy, the introduction of $SiO_2$ nanoparticles in $TiO_2$ nanofibers were attribute to enlarge absorption in the visible region (380~440 nm). Additionally, $Br{\o}nsted$ acid sites generated in each metal oxide of Ti and Si increase OH radicals efficiently as well as it limit recombination loss by holding photogenerated electrons for high efficient photocatalytic activity.

• Korean Chemical Engineering Research
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• v.45 no.2
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• pp.149-154
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• 2007

Nanoimprint lithography (NIL) is useful technique because of its low cost and high throughput capability for the fabrication of sub-micrometer patterns which has potential applications in micro-optics, magnetic memory devices, bio sensors, and photonic crystals. Usually, a chemical surface treatment of the stamp is needed to ensure a clean release after imprinting and to protect the expensive original master against contamination. Meanwhile, adhesion promoter between resin and substrate is also important in the nanoscale pattern. In this work, we have investigated the effect of surface treatment using silane coupling agent as release layer and adhesion promoter for UV-Nanoimprint lithography. Uniform SAM (self-assembled monolayer) could be fabricated by vapor deposition method. Vapor phase process eliminates the use of organic solvents and greatly simplifies the handling of the sample. It was also proven that 3-acryloxypropyl methyl dichlorosilane (APMDS) could strongly improve the adhesion force between resin and substrate compared with common planarization layer such as DUV-30J or oxygen plasma treatment.

• Journal of Korean Society of Steel Construction
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• v.17 no.3 s.76
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• pp.325-335
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• 2005

This study tackles the development of an improved detail of partially restrained CFT square column-to-beam connection and the evaluation of its mechanical behavior under monotonic loading. The connection is designed to strengthen shearing capacity at the bottom of the connection due to the ultimate behavior of PR-CC by its detail of the bottom connection and simplify the fabrication process. The suggested connection is the welded bottom beam flange connection(M-2) and is compared with the existing PR-CC of bolted seat angle connection(M-1). Two specimens were fabricated in actual size and tested under monotonic loading. Based on the test results, the welded bottom beam flange connection exhibited about 85% of the stiffness of steel beam. It was similar to the bolted seat angle connection and behaved as PR-CC. The specimen of the supposed connection type failed at the shear connection of web but was similar to the bolted seat angle connection until the failure. It obtained sufficient stiffness and capacity through the reinforcingsteel and the capacity and deformational ability equivalent to the full-plastic moment through the anchor inside the steel tube at the web connection. So, it can be said that the suggested connection exhibits sufficient ductile behavior.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.