• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.1
• /
• pp.138-144
• /
• 2008

Micro-machining of a brittle material such as glass, silicon, etc., is important in micro fabrication. Particularly, micro-abrasive jet machining (${\mu}-AJM$) has become a useful technique for micro-machining of such materials. The ${\mu}-AJM$ process is mainly based on the erosion of a mask which protects brittle substrate against high velocity of micro-particle. Therefore, fabrication of an adequate mask is very important. Generally, for the fabrication of a mask in the ${\mu}-AJM$ process, a photomask based on the semi-conductor fabrication process was used. In this research a rapid mask fabrication technology has been developed for the ${\mu}-AJM$. By scanning the focused UV laser beam, a micro-mask pattern was fabricated directly without photolithography process and photomask. Two kinds of mask patterns were fabricated using SU-8 and photopolymer (Watershed 11110). Using fabricated mask patterns, abrasive-jet machining of Si wafer were conducted successfully.

• Journal of Electrical Engineering and Technology
• /
• v.10 no.3
• /
• pp.1138-1143
• /
• 2015

Effects of fabrication process variations on impedance of microelectrodes integrated on a neural probe were examined through equivalent circuit modeling and SPICE simulation. Process variation and the corresponding range were estimated based on experimental data. The modeling results illustrate that the process variation induced by metal etching process was the dominant factor in impedance variation. We also demonstrate that the effect of process variation is frequency dependent. Another process variation that was examined in this work was the thickness variation induced by deposition process. The modeling results indicate that the effect of thickness variation on impedance is negligible. This work provides a means to predict the variations in impedance values of microelectrodes on neural probe due to different process variations.

• 제어로봇시스템학회:학술대회논문집
• /
• 1989.10a
• /
• pp.421-426
• /
• 1989

Many of semiconductor manufacturing companies persuit automation of wafer fabrication to improve the yields and quality of their products. Development of real-time control system for wafer fabrication and wafer/cassette automatic transfer-system is the most important part to achieve the purpose. In this paper, SECS protocol proposed by SEMI is briefly reviewed and an implementation method of real-time monitoring and control system is suggested as one of the possible ways for wafer fabrication automation. The system consists of process equipments supporting SECS.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2002.02a
• /
• pp.98-100
• /
• 2002

We developed the Centrifugal Forming Process(CFP) for HTS tube fabrication. The self-designed equipment for CFP is devided into 3 main parts depending on its role and functions. the melting part by heating of high inductive frequency, centrifugal forming part for the tube and efficient microstructure control of Bi2212 phase and molding part for tube detachment after heat treatment. In this paper we will introduce self designed Centrifugal Forming Process for HTS tube fabrication and discuss about the results related mold materials in terms of high Tc superconductor.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.32 no.7
• /
• pp.602-609
• /
• 2008

This paper presents experimental optimization of process parameters for a newly developed SFF(Solid Freeform Fabrication) system. Two critical process parameters, layering thickness and curing period, which have a large effect on the quality of the product, are optimized through experiments. Specimens are produced using layering thicknesses of 60, 80, 100, 120, 140, and $160\;{\mu}m$ and curing periods of 0, 10, 20, and 30 minutes under the same processing conditions, i.e., build-room temperature, feed-room temperature, roller speed, laser power, scan speed, and scan spacing. The specimens are tested to compare and analyze performance indices such as thickness accuracy, flatness, stress-strain characteristics, and porosity. The experimental result indicates that layering thickness of $80{\sim}100\;{\mu}m$ and curing period of $20{\sim}30$ minutes are recommended for the developed industrial SFF system.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.31 no.1 s.256
• /
• pp.50-54
• /
• 2007

Nickel nano and microstructures are fabricated with simple process. The fabrication process consists of nickel deposition, lithography, nickel ion etching and plasma ashing. Well-aligned nickel nanowalls and nickel self-encapsulated microchannels were fabricated. We found that the ion etching condition as a key fabrication process of nickel nanowalls and self-encapsulated microchannels, i.e., 40 sccm Ar flow, 550 W RF power, 15 mTorr working pressure, and $20^{\circ}C$ water cooled platen without using He backside cooling unit and with using it, respectively. We present the experimental results and discuss the formational conditions and the effect of nickel redeposition on the fabrication of nickel nano and microstructures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.12
• /
• pp.771-775
• /
• 2015

In this paper, we designed and fabricated low cost imprinting process for micro patterning on FCCL (flexible copper clad laminate). Compared to conventional imprinting process, developed fabrication method processing imprint and UV photolithography step simultaneously and it does not require resin etch process and it can also reduce the fabrication cost and processing time. Based on proposed method, patterns with $10{\mu}m$ linewidth are fabricated on $180mm{\times}180mm$ FCCL. Compared to conventional methods using LDI (laser direct imaging) equipment that showed minimum line with $10{\sim}20{\mu}m$, proposed method shows comparable pattern resolution with very competitive price and shorter processing time. In terms of mass production, it can be applied to fabrication of large-area low cost applications including FPCB.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.1
• /
• pp.38-41
• /
• 2019

Proton beam writing is a direct writing lithography technique for semiconductor fabrication process. The advantage of this technique is that the proton beam does not scatter as they travel through the matter and therefore maintain a straight path as they penetrate into the resist. The experiment has been carried out at Accelerator Mass Spectrometry facility. The focused proton beam with the fluence of $100nC/mm^2$ was exposed on the PMMA coated silicon sample to make a pattern on a photo resist. The results show the potential of proton beam writing as an effective way to produce semiconductor fabrication process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2004.10a
• /
• pp.103-106
• /
• 2004

The new rheology fabrication process has been developed to rheo die casting and rheo forming process. Thixoforming process has disadvantages in terms of induction reheating process, scrap recycling, loss of raw material and cycle time. Therefore, to reduce the number of process, new rheology fabrication process with specially designed the rotational barrel type equipment has been proposed to apply in various part productions. The barrel type equipment, which could continuously fabricate the rheology materil, was specially designed to have a function to control cooling rate, shear rate and temperature. During the continuous rotation of barrel with a constant temperature, the shear rate is controlled with the rotation speed. The barrel surface has both the induction heating system and the cooling system to control the temperature of molten metal. By using this system, the effect of the rotation speed and the rotation time on the microstructure was widely examined. The possibility for the rheoforming process was investigated with microstructural characteristic.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.05a
• /
• pp.545-546
• /
• 2010