• Korean Journal of Bronchoesophagology
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• v.3 no.2
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• pp.253-260
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• 1997

Successful regeneration of a cartilage framework using perichondrium has been reported by several authors but there are some arguments surrounding mucosal regeneration. Some authors report that regeneration of mucosa is completed by ingrowth from neighboring tissue but others insist that it occurs via metaplasia from the squamous epithelium. This study was designed to investigate the differences, especially in mucosal regeneration between nonvascularized and vascularized flaps via immunohistochemical study. A morphologic study was carried out to elucidate the characteristics o( the regenerated mucosa which was sutured on the vascularized perichondrium and fabricated in a rabbit ear. A nonvascularized perichondrial-mucosal composite flap with the same dimension was transferred in the control group. BrdU was labelled on both normal mucosa and grafted mucosa in the experimental group without my statistically significant differences. In cytokeratin stain, it was regarded that mucosal coverage of the control group occurred by ingrowth from the neighboring mucosa. It can be conceived that metaplasia of the grafted mucosa occurs in a vascularized composite flap transferred group.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.34-39
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• 2014

The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.236-239
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• 2002

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.559-561
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• 2003

We report a new excimer laser annealing method which successfully results in a single grain boundary formation in the channel of polycrystalline silicon thin film transistor. The proposed method is based on lateral grain growth and employs aluminum patterns which act as selective beam mask and lateral heat sink. The maximum grain size obtained by the proposed method is about 1.6${\mu}{\textrm}{m}$ in the length. The grainboundaries should be arranged parallel with the direction of current flow for the best device performance, so we propose a new device fabrication method and a new poly-Si TFT structure. Poly-Si TFT fabricated by the proposed method exhibits considerably improved electrical characteristics, such as high field effect mobility exceeding 240 $cm^2$/Vsec.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.51-58
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• 1996

This report describes thick traveling-wave electrode formation and microwave transmission characteristics of the fabricated electrodes. Effective refractive indices of the microwave in the 5 micron CPW type traveling-wave electrodes is around 2.45 according to the results of time domain S parameter measurements. The bandwidth of the electrodes is about 10 GHz and could be extended to 15 GHz through optimization of the process. The developed process technique that enables plating of micropatterns upto 20 micron can be applied to broadband optical intensity modulators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.426-426
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• 2007

We report the field emission characteristics of transparent single-walled carbon nanotube (SWNT) film printed using an inkjet. Pure SWNTs dispersed in dimethylformamide were printed in a transparent layer on indium-tin oxide-coated glass and annealed at $350^{\circ}C$. After taping treatment, SWNTs were oriented vertically on the substrate. The front and the back of the fabricated device produced simultaneous emissions of identical quality. In addition, inkjet printing directly achieved a patterned emission, without a secondary pattern process. This method allows simple fabrication using only SWNTs, without the use of other additives.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.164-168
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• 2005

We report high performance poly (3-hexylthiophene) organic field-effect transistors fabricated on a plastic substrate. The polymer active channel layer was directly printed by the rubber stamp printing method with a pre-patterned elastomer stamp. As a result. organic transistors having average field-effect mobility of 0.079 $cm^2/Vs$ and on/off ratio of $10^4{\sim}10^5$ were realized on a plastic substrate. Also, through the investigation of the molecular ordering of rubber-stamp-printed poly (3-hexylthiophene) films using synchrotron grazing-incidence X-ray diffraction measurements, the films were found to have edge-on structure which is favorable in realizing high performance organic transistors.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.149-152
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• 1991

We report a new method of fabricating a Ti:LiNb03 waveguide with no out-diffusion by coating the waveguide with $SiO_2$ thin film. It was coated before diffusion process, and the $LiO_2$ out-diffusion was prevented in the diffusion process. We compare the near field patterns of the guided modes between the typical waveguide and the waveguide fabricated by new method proposed here.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.269-269
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• 2013

Redox cycling in between the two working electrodes in an electrochemical cell can lead a great signal enhancement. In this work, we report on a systematic examination of current amplification along with the decrease in the gap distance of a nanogap device which was fabricated by the combination of photo and chemical lithography [1]. The gap distance was controlled by the chemical lithographic process of surfacecatalyzed growth of metallic layer on pre-defined electrodes with wider initial gap. Enhancement of the redox current of ferri/ferrocyanide was observed upon gap distance reduction and the current is amplified about a thousand times in this redox system when the gap distance was decreased from 200 nm to 30 nm. The experimental results were discussed on the basis of the cyclic voltammetry (CV), atomic force microscopy (AFM) and scanning electron microscopy (SEM).

• Journal of Surface Science and Engineering
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• v.47 no.6
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• pp.362-367
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• 2014

We report the design, fabrication of a $Si_3N_4$ probe and calculation of its mechanical properties for DPN(dip pen nanolithography), which consists of dual tips. Concept of dual tip probe is to employ individual tips on probe as either an AFM tip for imaging or a writing tip for nano patterning. For this, the dual tip probe is fabricated using low residual stress $Si_3N_4$ material with LPCVD deposition and MEMS fabrication process. On the basis of FEM analysis we show that the functionality of dual tip probe for imaging is dependent on the dimensions of dual tip probe, and high ratio of widths of beam areas is preferred to minimize curvature variation on probe.