• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1186-1189
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• 2005

Focused Ion Beam machining is an attractive approach to produce nano-scale 3D structures. However, like other beam-based manufacturing processes, the redeposition of the sputtered material during the machining deteriorates the geometric accuracy of ion beam machining. In this research a new approach to reduce the geometric error in FIB machining is introduced. The observed redeposition phenomena have been compared with existing theoretical model. Although the redeposition effect has good repeatability the prediction of exact amount of geometric error in ion beam machining is difficult. Therefore, proposed method utilizes process control approach. Developed algorithm measures the redeposition amount after every production cycle and modifies next process plan. The method has been implemented to a real FIB machine and the experimental results demonstrated considerable improvement of five micrometer-sized pocket machining.

• Design & Manufacturing
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• v.14 no.2
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• pp.56-61
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• 2020

Recently, research for machining next-generation micro semiconductor processes and micro patterns has been actively conducted. In particular, it is applied to various industrial fields depending on the machining method in the case of FIB (Focused ion beam) milling. In this study, intends to deal with FIB milling machining technology for ultra-precision diamond tool fabrication technology. Ultra-precision diamond tools require nano-scale precision, and FIB milling is a useful method for nano-scale precision machining. However, FIB milling has a problem of Gaussian characteristics that are differently formed according to the beam current due to the input of an ion beam source, and there are process conditions to be considered, such as a side clearance angle problem of a diamond tool that is differently formed according to the tilting angle. A series of process steps for fabrication a ultra-precision diamond tool were studied and analyzed for each process. It was confirmed that the effect on the fabrication process was large depending on the spot size of the beam and the current of the beam as a result of the experimental analysis.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.109-110
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• 2008

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.969-975
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• 2002

Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.495-496
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• 2006

Electrostatically actuated nanoscale tweezers are fabricated on micro processed electrodes using FIB-CVD. Heavily doped electrode works as interconnection platform for controlling nanoscale devices. Short bent pillars are deposited to control the gap distance of main tweezers fabricated on bent ones. Two types of tweezers which have different gap distances are fabricated and tweezing motion was successfully demonstrated. The threshold voltages at snap-down of the pillars are dependent on the initial gap distance of the unactuated pillars, and the measured values were 93V for 3.6um and 30V for 2.2um. The dimension of nano tweezers and initial gap distances are controllable as demonstrated and we expect more complicated 3-dimensional shapes are also possible.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.193-196
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• 1993

A procedure for preparing cross-sectional specimens for transmission electron microscopy(TEM)by focused ion beam(FIB)milling of specific regions of semiconductor devices is outlined. This technique enables TEM specimens to be pripared at precisely preselected area. In-situ #W thin film deposition on the top surface of desired site is complementally used to secure the TEM specimens to be less wedge shaped, which is main shortcoming of previous FIB-assisted TEM sample preparation technique. This technique is quite useful for the TEM sample priparation for fault finding and the characterization of fabrication process associated with submicron contact technologies.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.4
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• pp.128-133
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• 2009

Focused-ion-beam (FIB) system is capable of both machining and measuring in nano-scale; hence nano-scale focusing quality is important. This paper investigates design parameters of two electrostatic lenses in order to achieve the best ion beam focusing performance. Commercial SIMION simulator is used to optimize the dimensions of the condenser and objective lenses and investigate the influence of assembly error on focusing quality The simulation results show that the beam focusing quality is not influenced by angle deviation within ${\pm}0.02\;deg$ and geometrical eccentricity within ${\pm}50$ micrometers.

• Korean Journal of Materials Research
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• v.6 no.6
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• pp.605-609
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• 1996

MOS 소자의 얇은산화막(thin oxide)불량을 화학적으로 식각하지 않고 불량부위를 광전자방사(photon emission)반응을 이용하여 위치를 확인하고, 이곳을 FIB로 절단하여 불량부위의 단면을 관찰했다. 20nm 두께의 SiO2불량은 셀(cell)영역의 위치에 따른 의존성은 없고, 불량은 저전계의 입자(particle)성 불량과 중간전계의 Si 기판 핏(pit)과 관련된 불량이 주였다. 고전계에서는 전형적인 SiO2 산화막의 절연파괴가 일어난 것이 관찰된다.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.4
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• pp.419-426
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• 2020

Understanding the pore structure including pore shape and connectivity in unconventional reservoirs is essential to increase the recovery rate of unconventional energy resources such as shale gas and oil. In this study, we found analysis condition to probe the nanoscale pore structure in shale reservoirs using Focused Ion Beam (FIB) and Ion Milling System (IMS). A-068 core samples from Liard Basin are used to probe the pore structure in shale reservoirs. The pore structure is analyzed with different pretreatment methods and analysis condition because each sample has different characteristics. The results show that surface milling by FIB is effective to obtain pore images of several micrometers local area while milling a large-area by IMS is efficient to observe various pore structure in a short time. Especially, it was confirmed that the pore structure of rocks with high content of carbonate minerals and high strength can be observed with milling by IMS. In this study, the analysis condition and process for observing the pore structure in the shale reservoirs is established. Further studies are needed to perform for probing the effect of pore size and shape on the enhancement of shale gas recovery.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.3
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• pp.615-620
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• 2008

We fabriacted thermal evaporated $10nm-Ni_{1-x}Co_x$(x=0.2, 0.6, and 0.7) films on 70 nm-thick polysilicon substrate with $0.5{\mu}m$ line width. NiCo composite silicide layers were formed by rapid thermal annealing (RTA) at the temperatures of $700^{\circ}C$ and $1000^{\circ}C$. Then, we checked the microstructure evaluation of silicide patterns. A FIB (focused ion beam) was used to micro-mill the interconnect patterns with low energy condition (30kV-10pA-2 sec). We investigated the possibility of selective removal of silicide layers. It was possible to remove low resistance silicide layer selectively with the given FIB condition for our proposed NiCo composite silicides. However, the silicides formed from $Ni_{40}Co_{60}$ and $Ni_{30}Co_{70}$ composition showed void defects in interconnect patterns. Those void defects hinder the selective milling for the NiCo composite silicides.