• Title/Summary/Keyword: FED(field emission display)

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Excitation Based Tunable Emissions from the Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ : $Sm^{3+}/Tb^{3+}$ Phosphors for Novel Inorganic LEDs

  • Raju, G. Seeta Rama;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.156-156
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    • 2011
  • Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were prepared by solvothermal reaction method for light emitting diode (LED) and field emission display (FED) applications. The XRD patterns of these phosphors confirmed their oxyapatite structure in the hexagonal lattice. The visible luminescence properties of these phosphors were investigated by exciting with ultraviolet (UV) or near-UV light and low voltage electron beam. The photoluminescence (PL) properties of $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were investigated as a function of $Sm^{3+}$ concentration. Cathodoluminescence (CL) properties were examined by changing the acceleration voltage. The CGS : $Sm^{3+}$ showed the dominant orange emission due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition. The CGS : $Tb^{3+}/Sm^{3+}$ phosphor showed the green, white and orange emissions when excited with 275, 378, and 405 nm wavelengths, respectively. The chromaticity coordinates of these phosphors were comparable to or better than those of standard phosphors for LED or FED devices.

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The Cathodoluminance Properties of $Y_2SiO_5$:Ce Blue Phosphor with Surface Coatings ($Y_2SiO_5$:Ce 청색 형광체의 표면 코팅에 따른 음극선 발광특성)

  • 음현중;김성우;이임렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.590-593
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    • 1999
  • $Y_2SiO_5$:Ce was considered as blue phosphor for field emission display because it had an excellent resistance against brightness saturation. But unfortunately It hadn't a sufficient brightness to be applied to FED. In this experiment It-$In_2O_3$, MgO and $SiO_2$ were coated onto $Y_2SiO_5$:Ce phosphor in order to improve the cathodoluminance(CL properties. The coating structures were identified to be the crystalline phases of $In_2O_3$ and MgO respectively. They had fine particle-like shape and were distributed on the surface of $Y_2SiO_5$:Ce phosphor. It was found that the CL efficiency of $Y_2SiO_5$:Ce phosphors were decreased after coatings with In20:j and MgO in voltage range from 500 V to 5 kV. But the brightness of $Y_2SiO_5$:Ce phosphor was increased after coating of 5 0 2 . And also the aging test showed that $In_2O_3$ coating improved the life time of $Y_2SiO_5$:Ce phosphor.

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Luminescence Characteristics Of $Gd_2$$O_3$$Eu^3+$/ thin film phosphors by Li-doping (Li 첨가에 의한 $Gd_2$$O_3$$Eu^3+$/ 박막 형광체의 형광 특성)

  • Bae, Jong-Seong;Moon, Byung-Kee;Seo, Hyo-Jin;Jeong, Jung-Hyun;Yi, Soung-soo
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.07a
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    • pp.284-285
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    • 2003
  • Significant research interest in the growth and characterization of $Y_2$O$_3$:Eu$^{3+}$ thin films has been shown over the last few years because of the promise for applications of display devices. Although an Eu-doped oxysulfide (Eu: $Y_2$O$_2$S) which has an efficiency of 13% has been used for a traditional cathode ray tube (CRT) red phosphor, the sulfide system is known to degrade rapidly under the high current densities needed for field-emission display (FED) technology. (omitted)d)

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Fabrication and Characterization of Carbon Nanotube Field Emission Display for HD-TV Applications

  • Lee, Chun-Gyoo;Chi, Eung-Joon;Hwang, Sung-Yeon;Lee, Sang-Jo;Lee, Sang-Jin;Yoon, Tae-Ill;Lee, Byong-Gon;Nam, Joong-Woo;Ryu, Mee-Ae;Han, Ho-Su;Jin, Sung-Hwan;Ahn, Sang-Hyuck;Seo, Hyoung-Cheol;Choi, Jong-Sik;Oh, Tae-Sik;Kang, Sung-Kee;Kim, Jong-Min;Kim, Jung-Woo;Park, Young-Jun;Han, In-Taek;Jin, Yong-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.191-192
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    • 2003
  • For the CNT-FED to be cost-effective, many efforts for the lower voltage operation have been made in the under-gate cathode structure. In this study, the effects of the frit proportion in the CNT paste, cathode electrode width, CNT-to-counter electrode gap, and the CNT length in the cathode structure were examined.

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Vacuum Sealing Technology of the Flat Panel Display by using the Frit Glass Heatable in Vacuum (진공에서 소성 가능한 프릿을 이용한 평판디스플레이 진공실장기술)

  • Kwon, Sang Jik;Yoo, In Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.3
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    • pp.181-185
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    • 2016
  • One of the important issues for fabricating the microelectronic display devices such as FED, PDP, and VFD is to obtain a high vacuum level inside the panel. In addition, sustaining the initial high vacuum level permanently is also very important. In the conventional packing technology using a tabulation method, it is not possible to obtain a satisfiable vacuum level for a proper operation. In case of FED, the poor vacuum level results in the increase of operating voltage for electron emission from field emitter tips and an arcing problem, resultantly shortening a life time. Furthermore, the reduction of a sealing process time in the PDP production is very important in respect of commercial product. The most probable method for obtaining the initial high vacuum level inside the space with such a miniature and complex geometry is a vacuum in-line sealing which seals two glass plates within a high vacuum chamber. The critical solution for the vacuum sealing is to develop a frit glass to avoid the bubbling or crack problems during the sealing process at high temperature of about $400^{\circ}C$ under the vacuum environment. In this study, the suitable frit power was developed using a mixture of vitreous and crystalline type frit powders, and a vacuum sealed CNT FED with 2 inch diagonal size was fabricated and successfully operated.

Characteristics of $ZnGa_2O_4$ phosphor prepared by Precipitation method and Solid-state reaction method (침전법과 고상반응법으로 제조한 $ZnGa_2O_4$ 형광체의 특성)

  • Cha, Jae-Hyeok;Kim, Se-Jun;Kwak, Hyun-Ho;Choi, Hyung-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.383-384
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    • 2007
  • The nano and micro-sized $ZnGa_2O_4$ phosphor were prepared by precipitation method and solid-state method. The luminescence, formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The result of XRD analysis showed that $ZnGa_2O_4$ spinel structure was formed at as-prepared in the case of precipitation method. However, micro-sized phosphor was required high heating treatment to have a satisfactory spinel structure. The CL intensity of nano-sized phosphor was about 4-fold higher than that of micro-sized phosphor. The emission spectra of all $ZnGa_2O_4$ phosphor show a self activated blue emission band at around 420 nm in the wide range of 300~600 nm.

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Luminescent Properties of $SrTiO_3:Pr^{3+}$ Phosphor Coated with $SiO_2$ and $Al_2O_3$ by Sol-Gel Method (졸-겔법에 의한 $SrTiO_3:Pr^{3+}$ 형광체의 $SiO_2$$Al_2O_3$ 코팅에 따른 발광특성)

  • Lee, Dong-Kyu;Lim, Mun-Hyuk;Lee, Jin-Hwa;Kim, Tae-Young
    • Journal of the Korean Applied Science and Technology
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    • v.23 no.3
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    • pp.243-251
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    • 2006
  • Field emission display(FED) is actively investigated in view of the development of full color flat-panel display, which can replace some cathode-ray tube(CRT). Thus, the development of new phosphors appropriate for FED is urgently needed and has been actively investigated. In this work, $SrTiO_3:Pr^{3+}$ phosphor was prepared by sol-gel method and the coating was applied by sol-gel method combined with sonication on these phosphor's surface into diluted precursor solution. It was found that very fine particles of coating material were formed on phosphor's surface. The luminescent intensity of $SrTiO_3:Pr^{3+}$ phosphor coated with $SiO_2$ and $Al_2O_3$ was considerably increased without any noticeable change in color chromaticity. The optimum concentration of coating material was found to be 1wt% and the optimum pH value of the solution was 10.

Vertical Growth of CNTs by Bias-assisted ICPHFCVD and their Field Emission Properties (DC Bias가 인가된 ICPHFCVD를 이용한 탄소나노튜브의 수직 배향과 전계방출 특성)

  • Kim, Kwang-Sik;Ryu, Ho-Jin;Jang, Gun-Eik
    • Journal of the Korean Ceramic Society
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    • v.39 no.2
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    • pp.171-177
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    • 2002
  • In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.

Optical Properties of Mn-doped $ZnGa_2O_4$ for FED phosphor (Field Emission Display 응용을 위한 Mn-doped $ZnGa_2O_4$ 형광체의 광학적특성)

  • Sin, Han;Park, Sung
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1517-1519
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    • 1999
  • FED용 형광체로 사용되는 $ZnGa_2O_4$를 Glycine Nitrate Process로 합성하여 고상 반응법으로 합성한 $ZnGa_2O_4$ 분말과 비교 분석하였다. 또한 Glycine Nitrate Process로 제조시 Mn의 doping 농도를 변화시키면서 각각의 조성비에 따른 발광특성을 알아보았다. TGA 측정 결과 GNP법으로 합성된 $ZnGa_2O_4$의 경우약 $300^{\circ}C$이상에서 무게감량이 없으며, XRD 상분석 결과 연소반응 후 이미 상형성이 이루어짐을 알 수 있었다. PL측정을 결과 GP(Glycine Nitrate Process)로 제조된 $ZnGa_2O_4$ 분말의 발광효율이 고상 반응법으로 제조된 분말보다 우수하였으며, 균일하고 비표면적이 큰 단일상임이 관찰되었고, 더 작은 에너지와 시간으로 제조할 수 있는 장점이 있었다.

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Growth of Carbon Nanotubes using Plasma-Enhanced Chemical Vapor Deposition (플라즈마 CVD 를 이용한 탄소나노튜브의 성장)

  • Bang Y.Y.;Chang W.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.1236-1239
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    • 2005
  • Aligned carbon nanotubes(CNTs) array were synthesized using DC plasma-enhanced chemical vapor deposition. Silicon substrate Ni-coated of 5nm thickness were pretreated by $NH_3$ gas with a flow rate of 180sccm, for 10min. CNTs were grown on the pretreated substrates at $30%\;C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters from 60 to 80 nanometers and lengths about 2.7 micrometers were obtained. Vertical alignment of carbon nanotubes were observed by FESEM.

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