• Journal of Microbiology and Biotechnology
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• v.22 no.3
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• pp.343-351
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• 2012

In this paper, the kinetics of a cloned special glucosidase, named ginsenosidase type III hydrolyzing 3-O-glucoside of multi-protopanaxadiol (PPD)-type ginsenosides, were investigated. The gene (bgpA) encoding this enzyme was cloned from a Terrabacter ginsenosidimutans strain and then expressed in E. coli cells. Ginsenosidase type III was able to hydrolyze 3-O-glucoside of multi-PPD-type ginsenosides. For instance, it was able to hydrolyze the 3-O-${\beta}$-D-(1${\rightarrow}$2)-glucopyranosyl of Rb1 to gypenoside XVII, and then to further hydrolyze the 3-O-${\beta}$-D-glucopyranosyl of gypenoside XVII to gypenoside LXXV. Similarly, the enzyme could hydrolyze the glucopyranosyls linked to the 3-O-position of Rb2, Rc, Rd, Rb3, and Rg3. With a larger enzyme reaction $K_m$ value, there was a slower enzyme reaction speed; and the larger the enzyme reaction $V_{max}$ value, the faster the enzyme reaction speed was. The $K_m$ values from small to large were 3.85 mM for Rc, 4.08 mM for Rb1, 8.85 mM for Rb3, 9.09 mM for Rb2, 9.70 mM for Rg3(S), 11.4 mM for Rd and 12.9 mM for F2; and $V_{max}$ value from large to small was 23.2 mM/h for Rc, 16.6 mM/h for Rb1, 14.6 mM/h for Rb3, 14.3 mM/h for Rb2, 1.81mM/h for Rg3(S), 1.40 mM/h for Rd, and 0.41 mM/h for F2. According to the $V_{max}$ and $K_m$ values of the ginsenosidase type III, the hydrolysis speed of these substrates by the enzyme was Rc>Rb1>Rb3>Rb2>Rg3(S)>Rd>F2 in order.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1029-1033
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• 1997

A prototype MFSFET using ferroelectric fluoride BaMgF$_4$as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultrai-high vacuum system at a substrate temperature of below 30$0^{\circ}C$ and an in-situ post-deposition annealing was conducted for 20 seconds at $650^{\circ}C$ in the same chamber. The interface state density of the BaMgF$_4$/Si(100) interface calculated by a MFS capacitor fabricated on the same wafer was about 8$\times$10$^{10}$ /cm$^2$.eV. The I$_{D}$-V$_{G}$ characteristics of the MFSFET show a hysteresis loop due to the ferroelectric nature of the BaMgF$_4$film. It is also demonstrated that the I$_{D}$ can be controlled by the “write” plus which was applied before the measurements even at the same “read”gate voltage.ltage.

• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2479-2480
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• 2009

• New & Renewable Energy
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• v.2 no.3
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.73-77
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• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

• Journal of the military operations research society of Korea
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• v.8 no.1
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• pp.77-98
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• 1982

Experiments have been performed for estimating the individual muscle capabilities of the biceps brachii and the quadriceps femoris muscle. The surface EMG has been recorded on the bellies of the biceps brachii and the quadriceps femoris muscle during isometric contractions at $50\%,\;75\%,\;and\;100\%$ MVC. The rectified EMG amplitudes of the maximum voluntary contraction (MVC) were in the range of $2.8\~3.0\;mV\;and\;6.9\~7.2\;mV$ the biceps brachii and the quadriceps femoris, respectively. In the biceps brachii, Type S motor units were recruited in the range of $41\~49\%$ MVC; and Type F motor units were recruited in the range of $51\~59\%$ MVC, In the quadriceps femoris, Type S, Type SF, and Type F motor units were recruited in the ranges of $31\~38\%,\;33\~48\%$, and $21\~29\%$ MVC respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.952-954
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• 2003

We report the photo-(PL) and electroluminescence (EL) properties of new conjugated compounds based on carbazolyl vinylene moiety, 3,3'-(1,4-phenylene di-2,1-ethenediyl) bis[9-ethyl-(E,E)-9H-carbazole](PEEC) and 3,3'-([1,1'-biphenyl]-4,4'-diyldi-2,1-ethenediyl)bis[9-ethyl-9H-carbazole](BPEEC), as emitting materials. The ITO/m-MTDATA/NPB/BPEEC/Alq3/LiF/Al device shows bluish-green EL spectrum at 490nm and turn-on voltage at 8V. PEEC shows bluish-green EL around ${\lambda}$ max=496nm and turn-on voltage at 6V and 2.4 Cd/A efficiency in ITO/m-MTDATA/NPB/PEEC/Alq3/LiF/Al device.

• Proceedings of the Safety Management and Science Conference
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• 2003.11a
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• pp.335-343
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• 2003

In the electrode fabrication of unit cell, it was ascertained that electrochemical characteristics were greatly increased with 90 wt.% of BP-20, 5 wt.% of Super P and 5 wt.% of mixed binder [P(VdF-co-HFP) : PVP =7 : 3] The self-discharge of unit cell showed that diffusion process was controlled by the ion concentration difference of initial electrolyte due to the characteristics of Electric Double Layer Capacitor (EDLC) charged by ion adsorption in the beginning, but this by current leakage through the double-layer at the electrode/electrolyte interface had a minor effect and voltages of curves were remained constant regardless of electrode material. The electrochemical characteristics of 2.3 V/3,000 F grade EDLC were as follows: 0.35 m of DC-ESR (100 A discharge), 0.14 mof AC-ESR (AC amplitude 100 mV), 2.80 Wh/kg (3.73 Wh/L) of energy density and 4.64 kW /kg (6.19 kW/L) of power density. Power output was compatible with electric vehicle applications, uninterrupted power supply and engine starter, in due consideration of Ragone relations.

• ETRI Journal
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• v.31 no.6
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• pp.755-764
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• 2009

This paper presents a switched self-biasing and a tail current-shaping technique to suppress the 1/f noise from a tail current source in differential cross-coupled inductance-capacitance (LC) voltage-controlled oscillators (VCOs). The proposed LC VCO has an amplitude control characteristic due to the creation of negative feedback for the oscillation waveform amplitude. It is fabricated using a 0.13 ${\mu}m$ CMOS process. The measured phase noise is -117 dBc/Hz at a 1 MHz offset from a 4.85 GHz carrier frequency, while it draws 6.5 mA from a 0.6 V supply voltage. For frequency tuning, process variation, and temperature change, the amplitude change rate of the oscillation waveform in the proposed VCO is 2.1 to 3.2 times smaller than that of an existing VCO with a fixed bias. The measured amplitude change rate of the oscillation waveform for frequency tuning from 4.55 GHz to 5.04 GHz is 131 pV/Hz.

• Journal of the Korean institute of surface engineering
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• v.55 no.5
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• pp.292-298
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• 2022

In this study, PEO (plasma electrolytic oxidation) film formation behavior of AZ31 Mg alloy under application of 300 Hz pulse current was studied by the analyses of V-t curve, arc generation behavior, PEO film thickness and morphology of PEO films with treatment time in 0.05 M NaOH + 0.05 M Na₂SiO₃ + 0.1 M NaF solution. PEO films was observed to grow after 10 s of application of pulse current together with generation of micro-arcs. PEO film grew linearly with treatment time at a growth rate of about 5.58 ㎛/min at 200 mA/cm² of pulse current but increasing rate of film formation voltage became lowered largely with increasing treatment time after passing about 250 V, suggesting that resistivity of PEO films during micro-arc generation decreases with increasing film formation voltage at more than 250 V.