• Title/Summary/Keyword: F.V.M.

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1V 2.56-GS/s 6-bit Flash ADC with Clock Calibration Circuit (클록 보정회로를 가진 1V 2.56-GS/s 6-bit Flash ADC)

  • Kim, Sang-Hun;Lee, Han-Yeol;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.436-439
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    • 2011
  • 본 논문은 클록 보정회로를 가진 1V 2.56-GS/s 6-bit flash analog-to-digital converter (ADC) 제안한다. 제안하는 ADC 구조에서 아날로그 블록은 단일 T/H와 2단의 프리앰프, 그리고 비교기를 사용된다. 2단의 프리앰프와 비교기의 출력에 옵셋의 크기를 줄이기 위하여 저항 평균화 기법을 적용하였다. 디지털 블록은 quasi-gray rom base 구조를 사용한다. 3입력 voting 회로로 flash ADC에서 발생하기 쉬운 bubble error를 제거하였으며, 고속 동작을 위해 단일 클록을 사용하는 TSPC F/F로 구현한다. 제안하는 flash ADC는 클록 듀티 비를 조절할 수 있는 클록 보정회로를 사용한다. 클록 보정 회로는 비교기 클록 듀티 비를 조절하여 리셋 시간과 evaluation 시간의 비율을 최적화함으로 dynamic 특성을 확보한다. 제안한 flash ADC는 1V 90nm의 CMOS 공정에서 설계되었다. Full power bandwidth인 1.2 GHz 입력에 대하여 ADC 성능을 시뮬레이션을 통해 확인하였다. 설계된 flash ADC의 면적과 전력소모는 각각 $800{\times}400\;{\mu}m^2$와 193.02mW 이다.

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Metal Vapor Laser Research II. (금속증기레이저 연구 II)

  • 이재경;정환재;임기건;이형종;정창섭;김진승
    • Korean Journal of Optics and Photonics
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    • v.3 no.3
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    • pp.178-182
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    • 1992
  • An air-cooled discharge-heated copper-vapor laser system with its inter-electrode distance of 45 cm has been developed by utilizing an alumina ceramic plasma tube of 1.6 cm in diameter and 50 cm in lengih. For operating the laser, a dc high voltage power supply with output rating of 6 kV and 500 mA, a resonant charging circuitry consisting partly of an 1.8 H inductor assembly and a 5 nF storage capacitor, and a thyratron driver operating up to 7 kHz have also been developed. The present laser system starts lasing at the tube temperature of about $1350^{\circ}C$ and an maximum average output power of 0.7 W has been obtained at 12 kV, 4.5 kHz. 50 mbar of Ne buffer gas pressure, and at the tube temperature of $1460^{\circ}C$.

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CONSTRUCTION OF Γ-ALGEBRA AND Γ-LIE ADMISSIBLE ALGEBRAS

  • Rezaei, A.H.;Davvaz, Bijan
    • Korean Journal of Mathematics
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    • v.26 no.2
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    • pp.175-189
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    • 2018
  • In this paper, at first we generalize the notion of algebra over a field. A ${\Gamma}$-algebra is an algebraic structure consisting of a vector space V, a groupoid ${\Gamma}$ together with a map from $V{\times}{\Gamma}{\times}V$ to V. Then, on every associative ${\Gamma}$-algebra V and for every ${\alpha}{{\in}}{\Gamma}$ we construct an ${\alpha}$-Lie algebra. Also, we discuss some properties about ${\Gamma}$-Lie algebras when V and ${\Gamma}$ are the sets of $m{\times}n$ and $n{\times}m$ matrices over a field F respectively. Finally, we define the notions of ${\alpha}$-derivation, ${\alpha}$-representation, ${\alpha}$-nilpotency and prove Engel theorem in this case.

FCXO ; A Fuzzy Compensated Crystal Oscillator

  • de los Mozos, Mario Reyesr;Valderrama, Elena;Arguelles, Javier
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 1993.06a
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    • pp.842-844
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    • 1993
  • We present a F.L.C. (Fuzzy Logic Controller) to control of the oscillation frequency of a V.C.X.O. (Voltage Controled Crystal Oscillator). This F.C.X.O. maintains stable its oscillation frequency inside a range of 1 ppm (one part per millon), with temperature between -55$^{\circ}C$ to+75$^{\circ}C$.

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Studies on Fabrication and Characteristics of $Al_{0.3}Ga_0.7N/GaN$ Heterojunction Field Effect Transistors for High-Voltage and High-Power Applications (고전압과 고전력 응용을 위한 $Al_{0.3}Ga_0.7N/GaN$ 이종접합 전계효과 트랜지스터의 제작 및 특성에 관한 연구)

  • Kim, Jong-Wook;Lee, Jae-Seung;Kim, Chang-Suk;Jeong, Doo-Chan;Lee, Jae-Hak;Shin, Jin-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.8
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    • pp.13-19
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    • 2001
  • We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

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Preparation and Characterization of White Polymer Light Emitting Diodes using PFO:MEH-PPV (PFO:MEH-PPV를 이용한 White PLED의 제작과 특성평가)

  • Shin, Sang-Baie;Gong, Su-Choel;Park, Hyung-Ho;Jeon, Hyeong-Tag;Chang, Ho-Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.4
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    • pp.59-64
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    • 2008
  • In this paper, white polymer light emitting diodes(WPLEDs) were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as anode and hole injection materials, PFO [poly(9,9-dioctylfluorene)] and MEH-PPV [poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. The LiF(lithium flouride) and Al(aluminum) were used electron injection materials and cathode materials. Finally, the WPLED with structure of ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al was fabricated. The prepared WPLED showed white emission with CIE coordinates of (x=0.36, y=0.35) at the applied voltage of 9V. The maximum current density and luminance were about $740mA/cm^2\;and\;900cd/m^2$ at 13V, respectively. And the maximum current efficiency was 0.37 cd/A at $200cd/m^2$ in luminance.

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Single-Electron Pass-Transistor Logic with Multiple Tunnel Junctions and Its Hybrid Circuit with MOSFETs

  • Cho, Young-Kyun;Jeong, Yoon-Ha
    • ETRI Journal
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    • v.26 no.6
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    • pp.669-672
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    • 2004
  • To improve the operation error caused by the thermal fluctuation of electrons, we propose a novel single-electron pass-transistor logic circuit employing a multiple-tunnel junction (MTJ) scheme and modulate a parameters of an MTJ single-electron tunneling device (SETD) such as the number of tunnel junctions, tunnel resistance, and voltage gain. The operation of a 3-MTJ inverter circuit is simulated at 15 K with parameters $C_g=C_T=C_{clk}=1\;aF,\;R_T=5\;M{\Omega},\;V_{clk}=40\;mV$, and $V_{in}=20\;mV$. Using the SETD/MOSFET hybrid circuit, the charge state output of the proposed MTJ-SETD logic is successfully translated to the voltage state logic.

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Cytotoxic Effect and Constituent Profile of Alkaloid Fractions from Ethanolic Extract of Ficus septica Burm. f. Leaves on T47D Breast Cancer Cells

  • Nugroho, Agung Endro;Akbar, Fiki Fatihah;Wiyani, Anggie;Sudarsono, Sudarsono
    • Asian Pacific Journal of Cancer Prevention
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    • v.16 no.16
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    • pp.7337-7342
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    • 2015
  • The study aimed to investigate the profile of alkaloids in two ethyl acetate soluble fractions, namely fractions A and B from an ethanolic extract of Ficus septica leaves and cytotoxic effect on T47D breast cancer cells. Preparation of both fractions involved maceration of leaves with 70% (v/v) ethanol, filtration with $Al_2O_3$, precipitation with 0.1 N HCl, Mayer reagent, and 0.1 N NaOH, and also partition with ethyl acetate. Qualitative thin layer chromatography (TLC) was conducted to determine the profile of alkaloids in the two fractions, using alkaloid specific reagents such as Dragendorff, sodium nitrite, and Van Urk-Salkowski. Cytotoxic effects of both fractions on T47D cells were evaluated using MTT assay with a concentration series of 1.56; 3.12; 6.25; 12.5; 25 and $50{\mu}g/mL$. The TLC test showed that fractions A and B contained alkaloids with Rx values of 0.74 and 0.80 for fraction A and 0.74, 0.84, 0.92 for fraction B with regard to yohimbine using the mobile phase of n-buthanol:glacial acetic acid:distilled water (3:1:1 v/v/v). Moreover, an indole alkaloid was detected with Rx values of 0.80 and 0.84, respectively. Fractions A and B exhibited high cytotoxic effects on T47D cells with IC50 values of 2.57 and $2.73{\mu}g/mL$, respectively. In conclusion, overall the results of this study showed that fractions of Ficus septica contain alkaloids including indole alkaloid or its derivatives and possess a cytotoxic effect on T47D cells. This research supports the idea that alkaloids in F. septica have anticancer activity.

Are There Any Old Globular Clusters in the Starburst Galaxy M82?

  • Lim, Sung-Soon;Hwang, Na-Rae;Lee, Myung-Gyoon
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.1
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    • pp.63.1-63.1
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    • 2011
  • M82 is a famous starburst galaxy which is dominated by young stellar populations and ISM. Some previous studies indicated the existence of intermediate-age and old stellar population in this galaxy, but little is known about them. We present a study of old globular clusters in M82 using the Hubble Space Telescope archive data. From the cluster survey of M82 we found 650 star clusters. We divided them into disk and halo star clusters according to their position. The color-color diagrams show that all 19 halo star clusters are old globular clusters. The disk sample may include both reddened young clusters and geniune old globular clusters. We estimated their ages using spectral energy distribution fit method with six filter data covering from ultraviolet (F330W) to infrared (F160W), and found that 30 of them are older than 3 Gyr. These are considered to be disk globular clusters. Twelve of the halo globular clusters are found to be partially resolved into their member stars. The (B-V) color range of the halo globular clusters is consistent with that of the Milky Way globular clusters, but most of M82 globular clusters are bluer than (B-V)=0.7. The existence of these old globular clusters suggests that the starburst galaxy M82 has an old stellar halo that may be as old as the Milky Way halo.

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Etching Characteristics of SBT Ihin Film in High Density Plasma (고밀도 플라즈마를 이용한 SBT의 식각 특성)

  • 김동표;이원재;유병곤;김창일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.938-941
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    • 2000
  • SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

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