• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.791-794
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• 1998

This paper presents a constant gm input stagefor low-voltage rail-to-rail operational amplifier. A proposed scheme uses two current paths to keep sum of the biasing currents of the complimentary input pairs. The op amp was designed in a $0.8\mu\textrm{m},$ n-well CMOS, double-polysilicon and double-metal technology. This achieved in weak inversion. The circuit can operate in power supply voltage from 1.5V up to 3V. An open-loop gain, AV, was simulated as 84dB for 15pF load. An unit-gain frequency, fT was 10MHz.

• Korean Journal of Pharmacognosy
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• v.4 no.4
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• pp.205-207
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• 1973

A component $F,\;C_{20}H_{30}O_4,\;M^+\;(m/e)\;334,\;mp\;258{\sim}260^{\circ},\;[{\alpha}]D=-133.25^{\circ}\;(C=0.2,\;EtOH)$, was isolated from Siegesbeckia pubescens $M_{AKINO}$. This compound was identified as $16{\beta}-(-)-kauran-17$, 19-dioic acid, using spectroscopies and synthesizing various derivatives of the compound F.

• Solar Energy
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• v.10 no.3
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• pp.60-65
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• 1990

[ $n^+-p^+$ ] InP homojunction solar cells were fabricated by thermal diffusion of sulphur into a $p^+$-InP wafer($p=4{\times}10^{18}cm^{-3}$), and a SiO film($600{\AA}$ thick) was coated on the $n^+$ layer as an antireflection(AR) coating by an e-beam evaporator. The volume of the cells were $5{\times}5{\times}0.3mm^3$. The front contact grids of the cells with 16 finger pattern of which width and space were $20{\mu}m$ and $300{\mu}m$ respectively, were formed by photo-lithography technique. The junction depth of sulphur were as shallow as about 0.4r m We found out the fabricated solar cells that, with increasing the diffusion time, short circuit current densities($J_{sc}$), series resistances($R_s$) and energy conversion efficiencies(${\eta}$) were increased. The cells show good spectral responses in the region of $5,000-9,000{\AA}$. The short circuit current density, the open circuit voltage( $V_{oc}$), the fill factor(F.F) and the energy conversion efficiency of the cell were $13.16mA/cm^2$, 0.38V, 53.74% and 10.1% respectively.

• Journal of the Korean Mathematical Society
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• v.39 no.5
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• pp.783-800
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• 2002

Let B denote the unit ball in $C^n$, and ν the normalized Lebesgue measure on B. For $\alpha$ > -1, define $dv_\alpha$(z) ＝ $c_\alpha$$(1-\midz\mid^2)^{\alpha}$dν(z), z $\in$ B. Here $c_\alpha$ is a positive constant such that $v_\alpha$(B) ＝ 1. Let H(B) denote the space of all holomorphic functions in B. For $p\geq1$, define the Bergman-Privalov space $(AN)^{p}(v_\alpha)$ by $(AN)^{p}(v_\alpha)$ = ${f\inH(B)$ : $\int_B{log(1+\midf\mid)}^pdv_\alpha\;<\;\infty}$ In this paper we prove that a function $f\inH(B)$ is in $(AN)^{p}$$(v_\alpha)$ if and only if $(1+\midf\mid)^{-2}{log(1+\midf\mid)}^{p-2}\mid\nablaf\mid^2\;\epsilon\;L^1(v_\alpha)$ in the case 1＜p＜$\infty$, or $(1+\midf\mid)^{-2}\midf\mid^{-1}\mid{\nabla}f\mid^2\;\epsilon\;L^1(v_\alpha)$ in the case p ＝ 1, where $nabla$f is the gradient of f with respect to the Bergman metric on B. This is an analogous result to the characterization of the Hardy spaces by M. Stoll [18] and that of the Bergman spaces by C. Ouyang-W. Yang-R. Zhao [13].

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Bulletin of the Korean Mathematical Society
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• v.40 no.4
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• pp.545-551
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• 2003

We define subalgebras ${V_q}^{mZ{\times}nZ}\;of\;V_q\;where\;V_q$ are in the paper [4]. We show that the Lie algebra ${V_q}^{mZ{\times}nZ}$ is simple and maximally abelian decomposing. We may define a Lie algebra is maximally abelian decomposing, if it has a maximally abelian decomposition of it. The F-algebra automorphism group of the Laurent extension of the quantum plane is found in the paper [4], so we find the Lie automorphism group of ${V_q}^{mZ{\times}nZ}$ in this paper.

• ETRI Journal
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• v.37 no.5
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• pp.972-978
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• 2015

This paper proposes an accurate tunable-gain 1/x circuit. The output voltage of the 1/x circuit is generated by using a capacitor charging time that is inversely proportional to the input voltage. The output voltage is independent of the process parameters, because the output voltage depends on the ratios of the capacitors, resistors, and current mirrors. The voltage gain of the 1/x circuit is tuned by a 10-bit digital code. The 1/x circuit was fabricated using a $0.18{\mu}m$ CMOS process. Its core area is $0.011mm^2$ ($144{\mu}m{\times}78{\mu}m$), and it consumes $278{\mu}W$ at $V_{DD}=1.8V$ and $f_{CLK}=1MHz$. Its error is within 1.7% at $V_{IN}=0.05V$ to 1 V.

• Restorative Dentistry and Endodontics
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• v.22 no.1
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• pp.396-412
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• 1997

The purpose of this study is to observe the corrosion characteristics of five dental amalgams(CAULK FINE CUT, OPTALLOY II, DISPERSALLOY, TYTIN, and VALIANT) in the solutions with fluoride compound through the anodic polarization curve obtained by using a potentiostat. After each amalgam alloy and Hg being triturated, the triturated mass was inserted into the cylindrical metal mold, and condensed by hydraulic pressure(160 kg/$cm^2$). Each specimen was removed from the metal mold. Specimens were polished with the silicone carbide grinding paper 24 hours after condensation and stored at room temperature for 1 week. The anodic polarization curves were employed to compare the corrosion behaviours of the amalgams in 0.9 % saline solution and in the saline solutions with 2.2 ppm, 0.05 %, 2 % NaF, and 8 % $SnF_2$ at $37^{\circ}C$ with 3-electrode potentiostat. After the immersion of specimen in electrolyte for 30 minutes, the potential scan was begun. The potential scan range was -1500m V to + 800m V(vs. S.C.E.) in the working electrode and the scan rate was 50 mV/sec. The results were as follows, 1. The corrosion potential, the potential of anodic current peak, and transpassive potential in the saline solutions with NaF shifted to lower direction than those in normal saline solution, and the current density in the saline solutions with NaF was higher than that in normal saline solution. The differences were increased as the concentrations of NaF became higher. 2. The corrosion potential and transpassive potential in the saline solution with $SnF_2$ shifted to higher direction than those in normal saline solution, and the current density in the saline solution with $SnF_2$ was higher than that in normal saline solution after the corrosion potential. The anodic polarization curves in the saline solution with $SnF_2$ had no outstanding anodic current peak. 3. The corrosion potentials for high-copper amalgams were much higher than those for CAULK FINE CUT and OPTALLOY II in normal saline solution, but, as the concentrations of fluoride compound became higher, the differences in corrosion potentials between them were decreased. The corrosion potentials had the similarity in the saline solution with 2% NaF or 8% $SnF_2$. 4. The current density for TYTIN was the lowest among the others in normal saline solution and in the saline solution with 2.2 ppm or 0.05 % NaF. 5. There was no significant difference in current density between Pd-enriched VALIANT and other high-copper amalgams.

• Journal of Electrochemical Science and Technology
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• v.10 no.1
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• pp.1-13
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• 2019

Na-ion batteries are being considered as promising cost-effective energy storage devices for the future compared to Li-ion batteries owing to the crustal abundance of Na-ion. However, the large radius of the Na ion result in sluggish electrode kinetics that leads to poor electrochemical performance, which prohibits the use of these batteries in real time application. Therefore, identification and optimization of the anode, cathode, and electrolyte are essential for achieving high-performance Na-ion batteries. In this context, the current review discusses the suitable high-voltage cathode materials for Na-ion batteries. According to a recent research survey, sodium vanadium fluorophosphate (NVPF) compounds have been emphasized for use as a high-voltage Na-ion cathode material. Among the fluorophosphate groups, $Na_3V_2(PO_4)_2F_3$ exhibited the high theoretical capacity ($128mAh\;g^{-1}$) and working voltage (~3.9 V vs. $Na/Na^+$) compared to the other fluorophosphates and $Na_3V_2(PO_4)_3$. Here, we have also highlighted the classification of Fluorophosphates, NVPF composite with carbonaceous materials, the appropriate synthesis methods and how these methods can enhance the electrochemical performance. Finally, the recent developments in NVPF for the application in energy storage devices and its outlook are summarized.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.227-228
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• 2006

In this paper, we introduce the design and fabrication of 60 GHz low noise amplifier MMIC for IEEE802.15.3c WPAN system. The 60 GHz LNA was designed using ETRI's $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The performances of the fabricated 60 GHz LNA MMIC are operating frequency of $60.5{\sim}62.0\;GHz$, small signal gain ($S_{21}$) of $17.4{\sim}18.1\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-14{\sim}-3\;dB$, output reflection coefficient ($S_{22}$) of $-11{\sim}-5\;dB$ and noise figure (NF) of 4.5 dB at 60.75 GHz. The chip size of the amplifier MMIC was $3.8{\times}1.4\;mm^2$.