• 정보처리학회논문지B
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• 제15B권2호
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• pp.131-136
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• 2008

그래프 G = (V, E) 의 L(2,1)-labeling 이란 함수 f: V(G) $\rightarrow$ {0, 1, 2, ...} 를 정의하는 것으로서 함수 f 는 만일 G 내의 두 개 정점 u, $\upsilon$ 사이의 최단거리가 1 인 경우 $|f(u)\;-\;f(\upsilon)|\;{\geq}\;2$ 라는 조건 및 최단거리가 2 인 경우 $|f(u)\;-\;f(\upsilon)|\;{\geq}\;1$ 라는 조건을 만족시켜야 한다. ${\lambda}(G)$ 로 표기되는 G 의 L(2,1)-labeling 수는 모든 가능한 f 들 사이에서 사용된 가장 큰 정수가 가장 작은 값을 나타낸다. 상기한 문제는 NP-complete 계열의 문제이기 때문에 본 논문에서는 L(2,1)-labeling 에 적용 가능한 유전자 알고리즘을 개발한 후 개발된 알고리즘을 최적값이 알려진 그래프들에 적용하여 그 효율성을 보이고자 한다.

• 대한방사선기술학회지:방사선기술과학
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• 제30권3호
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• pp.245-250
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• 2007

진단용 방사선발생장치에서의 X선 에너지와 $^{99m}Tc$-MDP, $^{18}F$-FDG의 감마선 에너지 대한 apron 0.25, 0.5 mmPb에 대한 차폐율을 측정하였다. X선 에너지는 관전압 $40{\sim}120\;kVp$ 범위 내에서 부가여과판 0, 2 mmAl을 사용 한 경우에 실효에너지가 $26.2{\sim}45.6\;keV$로 측정되었으며, 이때 apron 0.5 mmPb은 0.25 mmPb보다 최대 선질에서 5.5% 정도 차폐율이 증가하였다. 또한 두 종류의 apron은 직접선과 공간선량률에 대하여 90% 이상의 높은 차폐율을 나타내었다. 그리고 $^{99m}Tc$-MDP의 140 keV에서 0.25, 0.5 mmPb apron을 사용할 경우 $30{\sim}53%$ 정도의 차폐효과가 있었으며, $^{18}F$-FDG의 511 keV의 높은 에너지에서는 $1.3{\sim}3.6%$로 apron의 차폐효과가 매우 적었다.

• Korean Chemical Engineering Research
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• 제50권2호
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• pp.204-210
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• 2012

니켈에 양극산화법을 적용하여 기존의 선행연구에서 보고되었던 nm 단위의 두께를 극복하고 최대 2.3 ${\mu}m$ 두께의 산화니켈 박막을 제조하였다. 전해질은 에틸렌글리콜을 용매로 사용하였으며 $F^-$ 이온을 공급하기 위해 $NH_4F$를 첨가하였다. 전압을 40, 60, 80 V로 변화시키며 최대 12시간까지 양극산화반응을 진행하였으며 시간과 전압을 증가시킴에 따라 산화니켈 박막의 두께도 증가하였다. 그러나 80 V 전압에서는 급격한 산화 작용에 따른 니켈의 파괴가 나타났다. XRD 분석 결과 양극산화에 의해 NiO가 생성되었음을 확인하였다.

• Kyungpook Mathematical Journal
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• 제59권3호
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• pp.515-523
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• 2019

Consider a graph G of order n and maximum degree ${\Delta}$. Let $f:V(G){\rightarrow}\{0,1,{\cdots},{\lceil}{\frac{{\Delta}}{2}}{\rceil}+1\}$ be a function that labels the vertices of G. Let $B_0=\{v{\in}V(G):f(v)=0\}$. The function f is a strong Roman dominating function for G if every $v{\in}B_0$ has a neighbor w such that $f(w){\geq}1+{\lceil}{\frac{1}{2}}{\mid}N(w){\cap}B_0{\mid}{\rceil}$. In this paper, we study the bounds on strong Roman domination numbers of the Cartesian product $P_m{\square}P_k$ of paths $P_m$ and paths $P_k$. We compute the exact values for the strong Roman domination number of the Cartesian product $P_2{\square}P_k$ and $P_3{\square}P_k$. We also show that the strong Roman domination number of the Cartesian product $P_4{\square}P_k$ is between ${\lceil}{\frac{1}{3}}(8k-{\lfloor}{\frac{k}{8}}{\rfloor}+1){\rceil}$ and ${\lceil}{\frac{8k}{3}}{\rceil}$ for $k{\geq}8$, and that both bounds are sharp bounds.

• Journal of Microbiology and Biotechnology
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• 제21권9호
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• pp.914-920
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• 2011

Vibrio cholerae utilizes mannitol through an operon of the phosphoenolpyruvate-dependent phosphotransferase (PTS) type. A gene, mtlD, encoding mannitol-1-phosphate dehydrogenase was identified within the 3.9 kb mannitol operon of V. cholerae. The mtlD gene was cloned from V. cholerae O395, and the recombinant enzyme was functionally expressed in E. coli as a $6{\times}$His-tagged protein and purified to homogeneity. The recombinant protein is a monomer with a molecular mass of 42.35 kDa. The purified recombinant MtlD reduced fructose 6-phosphate (F6P) using NADH as a cofactor with a $K_m$ of $1.54{\pm}0.1$ mM and $V_{max}$ of $320.8{\pm}7.81\;{\mu}mol$/min/mg protein. The pH and temperature optima for F6P reduction were determined to be 7.5 and $37^{\circ}C$, respectively. Using quantitative real-time PCR analysis, mtlD was found to be constitutively expressed in V. cholerae, but the expression was up-regulated when grown in the presence of mannitol. The MtlD expression levels were not significantly different between V. cholerae O1 and non-O1 strains.

• 한국재료학회지
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• 제22권8호
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• pp.439-444
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• 2012

To compare the photocatalytic performances of titania for purification of waste water according to applied voltages and doping, $TiO_2$ films were prepared in a 1.0 M $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages. Chemical bonding states of F-N-codoped $TiO_2$ were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. Nanotubes were formed with thicknesses of 200-300 nm for the films anodized at 30 V, but porous morphology was generated with pores of 1-2 ${\mu}m$ for the $TiO_2$ anodized at 180 V. The phenomenon of spark discharge was initiated at about 98 V due to the breakdown of the oxide films in both solutions. XPS analysis revealed the spectra of F1s at 684.3 eV and N1s at 399.8 eV for the $TiO_2$ anodized in the $H_2SO_4-NH_4F$ solution at 180 V, suggesting the incorporation of F and N species during anodization. Dye removal rates for the pure $TiO_2$ anodized at 30 V and 180 V were found to be 14.0% and 38.9%, respectively, in the photocatalytic degradation test of the aniline blue solution for 200 min irradiation; the rates for the F-N-codoped $TiO_2$ anodized at 30 V and 180 V were found to be 21.2% and 65.6%, respectively. From the results of diffuse reflectance absorption spectroscopy (DRS), it was found that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward the visible light region up to 412 nm, indicating that the photocatalytic activity of $TiO_2$ is improved by appropriate doping of F and N by the addition of $NH_4F$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Earthquakes and Structures
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• 제22권6호
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• pp.597-608
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• 2022

One of the most important parameters affecting nonlinearsoil-structure interaction, especially rocking foundation, is the vertical factor of safety (F.S_v). In this research, the effect of F.S_v on the behavior of rocking foundations was experimentally investigated. A set of slow, cyclic, horizontal loading tests was conducted on elastic SDOF structures with different shallow foundations. Vertical bearing capacity tests also were conducted to determine the F.S_v more precisely. Furthermore, 10% silt was mixed with the dry sand at a 5% moisture content to reach the minimum apparent cohesion. The results of the vertical bearing capacity tests showed that the bearing capacity coefficients (N_c and N_γ) were influenced by the scaling effect. The results of horizontal cyclic loading tests showed that the trend of increase in capacity was substantially related to the source of nonlinearity and it varied by changing F.S_v. Stiffness degradation was found to occur in the final cycles of loading. The results indicated that the moment capacity and damping ratio of the system in models with lower F.S_v values depended on soil specifications such cohesiveness or non-cohesiveness and were not just a function of F.S_v.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.228-228
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• 1999

3전극 면방전형 AC-PDP의 구동에 있어서 방전유지시 구동진동수에 따른 전기적인 특성의 변화, 즉 셀 내의정전용량, 벽전하량, 벽전압, 응답시간, 메모리 상수등을 측정하였다. 본 연구를 위하여 셀핏치 1,080$mu extrm{m}$의 test panel을 제작하였다. 방전 유지전극의 폭과 간격은 각각 260$\mu\textrm{m}$, 100$\mu\textrm{m}$ 유전층은 30$\mu\textrm{m}$, 격벽은 120$\mu\textrm{m}$로 제작하였다. 방전유지전극에 150ns의 상승시간을 갖는 duty 40%의 사각파를 10~200kHz의 다양한 진동수로 인가하고, 이때 얻어지는 전압, 전류 파형과 QV 해석을 통하여 셀 내의 정전용량을 측정하였다. 그 결과 방전공간의 정전용량(Co)은 0.3pF/cell 으로 거의 일정하였으나, 유전층 내의 정전용량(Cg)는 진동수 증가에 따라 7.5pF/cell에서 0.8pF/cell까지 감소하는 경향을 보였다. 또한 전극간 정전용량(Cp)은 벽전하의 영향으로 nagative capacitance 특성을 보였다. 구동진동수가 10kHz에서 200kHz로 증가함에 따라 벽전하량은 34.5pC/ceoo에서 15.6pC/cell로 감소하며, 벽전압도 구동진동수 증가에 따라 104.4V에서 76.5V까지 감소하는 경향을 보였다.

• 대한수학회보
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• 제47권3호
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• pp.467-482
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• 2010

For a double array of random elements {$V_{mn};m{\geq}1,\;n{\geq}1$} in a real separable Banach space, some mean convergence theorems and weak laws of large numbers are established. For the mean convergence results, conditions are provided under which $k_{mn}^{-\frac{1}{r}}\sum{{u_m}\atop{i=1}}\sum{{u_n}\atop{i=1}}(V_{ij}-E(V_{ij}|F_{ij})){\rightarrow}0$ in $L_r$ (0 < r < 2). The weak law results provide conditions for $k_{mn}^{-\frac{1}{r}}\sum{{T_m}\atop{i=1}}\sum{{\tau}_n\atop{j=1}}(V_{ij}-E(V_{ij}|F_{ij})){\rightarrow}0$ in probability where {$T_m;m\;{\geq}1$} and {${\tau}_n;n\;{\geq}1$} are sequences of positive integer-valued random variables, {$k_{mn};m{{\geq}}1,\;n{\geq}1$} is an array of positive integers. The sharpness of the results is illustrated by examples.