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Precalcification Treatment of $TiO_2$ Nanotube on Ti-6Al-4V Alloy (Ti-6Al-4V 합금 표면에 생성된 $TiO_2$ 나노튜브의 전석회화 처리)

  • Kim, Si-Jung;Park, Ji-Man;Bae, Tae-Sung;Park, Eun-Jin
    • The Journal of Korean Academy of Prosthodontics
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    • v.47 no.1
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    • pp.39-45
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    • 2009
  • Statement of problem: Recently precalcification treatment has been studied to shorten the period of the implant. Purpose: This study was performed to evaluate the effect of precalcification treatment of $TiO_2$ Nanotube formed on Ti-6Al-4V Alloy. Material and methods: Specimens of $20{\times}10{\times}2\;mm$ in dimensions were polished sequentially from #220 to #1000 SiC paper, ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. The nanotubular layer was processed by electrochemical anodic oxidation in electrolytes containing 0.5 M $Na_2SO_4$ and 1.0 wt% NaF. Anodization was carried out using a regulated DC power supply (Kwangduck FA, Korea) at a potential of 20 V and current density of $30\;㎃/cm_2$ for 2 hours. Specimens were heat-treated at $600^{\circ}C$ for 2 hours to crystallize the amorphous $TiO_2$ nanotubes, and precalcified by soaking in $Na_2HPO_4$ solution for 24 hours and then in saturated $Ca(OH)_2$ solution for 5 hours. To evaluate the bioactivity of the precalcified $TiO_2$ nanotube layer, hydroxyapatite formation was investigated in a Hanks' balanced salts solution with pH 7.4 at $36.5^{\circ}C$ for 2 weeks. Results: Vertically oriented amorphous $TiO_2$ nanotubes of diameters 48.0 - 65.0 ㎚ were fabricated by anodizing treatment at 20 V for 2 hours in an 0.5 M $Na_2SO_4$ and 1.0 NaF solution. $TiO_2$ nanotubes were composed with strong anatase peak with presence of rutile peak after heat treatment at $600^{\circ}C$. The surface reactivity of $TiO_2$ nanotubes in SBF solution was enhanced by precalcification treatment in 0.5 M $Na_2HPO_4$ solution for 24 hours and then in saturated $Ca(OH)_2$ solution for 5 hours. The immersion in Hank's solution for 2 weeks showed that the intensity of $TiO_2$ rutile peak increased but the surface reactivity decreased by heat treatment at $600^{\circ}C$. Conclusion: This study shows that the precalcified treatment of $TiO_2$ Nanotube formed on Ti-6Al-4V Alloy enhances the surface reactivity.

Analysis of Characteristics of the Blue OLEDs with Changing HBL Materials (정공 저지층의 재료변화에 따른 청색유기발광소자의 특성분석)

  • Kim, Jung-Yeoun;Kang, Myung-Koo;Oh, Hwan-Sool
    • 전자공학회논문지 IE
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    • v.43 no.4
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    • pp.1-7
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    • 2006
  • In this paper, two types of blue organic light-emitting device were designed. We have analyzed the characteristics of Type I device without a hole blocking layer, and analyzed the characteristics of Type II device using a hole blocking layer of BCP or BAlq materials with 30 ${\AA}$ thickness. We obtained the ITO having the work function value of 5.02 eV using $N_2$ plasma treatment method with the plasma power 200 W. Type I device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/$Alq_3$/LiF/Al:Li, and type II device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/HBL/$Alq_3$/LiF/Al:Li. We have analyzed the characteristics of Type I and Type II device. The characteristics of the device were most efficiency on occasion of using a hole blocking layer of BAlq material with 30 ${\AA}$ thickness. Current density was 226.75 $mA/cm^2$, luminance was 10310 $cd/m^2$, Current efficiency was 4.55 cd/A, power efficiency was 1.43 lm/W at an applied voltage of 10V. The maximum EL wavelength of the fabricated blue organic light-emitting device was 456nm. The full-width at half-maximum (FWHM) for the EL spectra was 57nm. CIE color coordinates were x=0.1438 and y=0.1580, which was similar to NTSC deep-blue color with CIE color coordinates of x=0.14 and y=0.08.

Noise Characteristics of Readout Electronics for 64-Channel DROS Magnetocardiography System (64채널 DROS 심자도 시스템을 위한 검출 회로의 잡음 특성)

  • Kim J. M.;Kim K. D.;Lee Y. H.;Yu K. K.;Kim K. W.;Kwon H. C.;Sasada Ichiro
    • Progress in Superconductivity
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    • v.7 no.1
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    • pp.46-51
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    • 2005
  • We have developed control electronics to operate flux-locked loop (FLL), and analog signal filters to process FLL outputs for 64-channel Double Relaxation Oscillation SQUID (DROS) magnetocardiography (MCG) system. Control electronics consisting of a preamplifier, an integrator, and a feedback, is compact and low-cost due to larger swing voltage and flux-to-voltage transfer coefficients of DROS than those of dc SQUIDs. Analog signal filter (ASF) serially chained with a high-pass filter having a cut-off frequency of 0.1 Hz, an amplifier having a gain of 100, a low-pass filter of 100 Hz, and a notch filter of 60 Hz makes FLL output suitable for MCG. The noise of a preamplifier in FLL control electronics is $7\;nV/{\surd}\;Hz$ at 1 Hz, $1.5\;nV/{\surd}\;Hz$ at 100 Hz that contributes $6\;fT/{\surd}\;Hz$ at 1 Hz, $1.3\;fT/{\surd}\;Hz$ at 100 Hz in readout electronics, and the noise of ASF electronics is $150\;{\mu}V/{\surd}\;Hz$ equivalent to $0.13\;fT/{\surd}\;Hz$ within the range of $1{\sim}100\;Hz$. When DROSs are connected to readout electronics inside a magnetically shielded room, the noise of 64-channel DROS system is $10\;fT/{\surd}\;Hz$ at 1 Hz, $5\;fT/{\surd}\;Hz$ at 100 Hz on the average, low enough to measure human MCG.

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Low-operating voltage Pentacene FETs with High dielectric constant polymeric gate dielectrics and its hyteresis behavior

  • Park, Chan-Eon
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.168-168
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    • 2006
  • Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

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MINIMAL P-SPACES

  • Arya, S.P.;Bhamini, M.P.
    • Kyungpook Mathematical Journal
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    • v.27 no.1
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    • pp.27-33
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    • 1987
  • Minimal s-Urysohn and minimal s-regular spaces are studied. An s-Urysohn (respectively, s-regular) space (X, $\mathfrak{T}$) is said to be minimal s-Urysohn (respectively, minimal s-regular) if for no topology $\mathfrak{T}^{\prime}$ on X which is strictly weaker than $\mathfrak{T}$, (X, $\mathfrak{T}^{\prime}$) is s-Urysohn (respectively s-regular). Several characterizations and other related properties of these classes of spaces have been obtained. The present paper is a study of minimal P-spaces where P refers to the property of being an s-Urysohn space or an s-regular space. A P-space (X, $\mathfrak{T}$) is said to be minimal P if for no topology $\mathfrak{T}^{\prime}$ on X such that $\mathfrak{T}^{\prime}$ is strictly weaker than $\mathfrak{T}$, (X, $\mathfrak{T}^{\prime}$) has the property P. A space X is said to be s-Urysohn [2] if for any two distinct points x and y of X there exist semi-open set U and V containing x and y respectively such that $clU{\bigcap}clV={\phi}$, where clU denotes the closure of U. A space X is said to be s-regular [6] if for any point x and a closed set F not containing x there exist disjoint semi-open sets U and V such that $x{\in}U$ and $F{\subseteq}V$. Throughout the paper the spaces are assumed to be Hausdorff.

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Characterization of Blue Organic Light Emitting Diodes using TPM-BiP (TPM-BiP 청색 형광 재료의 전계발광특성)

  • Chang, Ji-Geun;Shin, Sang-Baie;Ahn, Jong-Myoung;Chang, Ho-Jung;Lee, Hak-Min;Gong, Myoung-Sun;Kim, Min-Young;Kim, Jun-Woo
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.2 s.19
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    • pp.11-14
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    • 2007
  • For the fabrication of blue color organic light emitting diodes(OLED) with a high performance, 2-TNATA [4,4',4"-tris (2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB [N,N'-bis (1-naphthyl) -N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by the vacuum thermal evaporation. After then, blue color emission layer was deposited using TPM-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl)phosphonate] and GDI602 as a light emitting organic material. Finally, the two kinds of OLEDs with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al and ITO/2-TNATA/NPB/GDI602/Alq_3/LiF/Al$ were prepared by in-situ deposition. The maximum current density and luminance were found to be about $588\;mA/cm^2\;and\;5239\;cd/m^2$ at 12V for the OLED sample with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al$. Color coordinate of blue OLED was x=0.18, y=0.18 (at llV) and the maximum current efficiency was 2.82 cd/A (at 6V) with the peak emission wavelength of 440 nm.

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Simulation of do Performance and Gate Breakdown Characteristics of MgO/GaN MOSFETs (MgO/GaN MOSFETs의 dc 특성 및 Gate Breakdown 특성 Simulation)

  • Cho, Hyeon;Kim, Jin-Gon;Gila, B.P.;Lee, K.P.;Abernathy, C.R.;Pearton, S.J.;Ren, F.
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.176-176
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    • 2003
  • The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

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Development of a Virus Elution and Concentration Procedure for Detecting Norovirus in Cabbage and Lettuce

  • Moon, Aerie;Hwang, In-Gyun;Choi, Weon-Sang
    • Food Science and Biotechnology
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    • v.18 no.2
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    • pp.407-412
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    • 2009
  • In this study, a rapid and efficient concentrating procedure that can be used for detecting viruses in vegetables was developed. The Sabin strain of poliovirus type 1 was used to evaluate the efficiency of virus recovery. The procedure included: (a) elution with 0.25 M threonine-0.3 M NaCl pH 9.5; (b) polyethylene glycol (PEG) 8000 precipitation; (c) chloroform extraction; (d) 2$^{nd}$ PEG precipitation; (f) RNA extraction; (g) reverse transcription-polymerase chain reaction (RT-PCR) combined with semi-nested PCR. The overall recoveries by elution/concentration were 29.0% from cabbage and 13.7% from lettuce. The whole procedure usually takes 18 hr. The overall detection sensitivity was 100 RT-PCR units of genogroup II norovirus (GII NoV)/25 g cabbage and 100 RT-PCR units of GII NoV/10 g lettuce. The virus detecting method developed in this study should facilitate the detection of low levels of NoV in cabbage and lettuce.