• Korean Journal of Mathematics
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• v.26 no.2
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• pp.175-189
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• 2018

In this paper, at first we generalize the notion of algebra over a field. A ${\Gamma}$-algebra is an algebraic structure consisting of a vector space V, a groupoid ${\Gamma}$ together with a map from $V{\times}{\Gamma}{\times}V$ to V. Then, on every associative ${\Gamma}$-algebra V and for every ${\alpha}{{\in}}{\Gamma}$ we construct an ${\alpha}$-Lie algebra. Also, we discuss some properties about ${\Gamma}$-Lie algebras when V and ${\Gamma}$ are the sets of $m{\times}n$ and $n{\times}m$ matrices over a field F respectively. Finally, we define the notions of ${\alpha}$-derivation, ${\alpha}$-representation, ${\alpha}$-nilpotency and prove Engel theorem in this case.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 1993.06a
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• pp.842-844
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• 1993

We present a F.L.C. (Fuzzy Logic Controller) to control of the oscillation frequency of a V.C.X.O. (Voltage Controled Crystal Oscillator). This F.C.X.O. maintains stable its oscillation frequency inside a range of 1 ppm (one part per millon), with temperature between -55$^{\circ}C$ to＋75$^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.13-19
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• 2001

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.59-64
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• 2008

In this paper, white polymer light emitting diodes(WPLEDs) were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as anode and hole injection materials, PFO [poly(9,9-dioctylfluorene)] and MEH-PPV [poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. The LiF(lithium flouride) and Al(aluminum) were used electron injection materials and cathode materials. Finally, the WPLED with structure of ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al was fabricated. The prepared WPLED showed white emission with CIE coordinates of (x=0.36, y=0.35) at the applied voltage of 9V. The maximum current density and luminance were about $740mA/cm^2\;and\;900cd/m^2$ at 13V, respectively. And the maximum current efficiency was 0.37 cd/A at $200cd/m^2$ in luminance.

• ETRI Journal
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• v.26 no.6
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• pp.669-672
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• 2004

To improve the operation error caused by the thermal fluctuation of electrons, we propose a novel single-electron pass-transistor logic circuit employing a multiple-tunnel junction (MTJ) scheme and modulate a parameters of an MTJ single-electron tunneling device (SETD) such as the number of tunnel junctions, tunnel resistance, and voltage gain. The operation of a 3-MTJ inverter circuit is simulated at 15 K with parameters $C_g=C_T=C_{clk}=1\;aF,\;R_T=5\;M{\Omega},\;V_{clk}=40\;mV$, and $V_{in}=20\;mV$. Using the SETD/MOSFET hybrid circuit, the charge state output of the proposed MTJ-SETD logic is successfully translated to the voltage state logic.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.16
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• pp.7337-7342
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• 2015

The study aimed to investigate the profile of alkaloids in two ethyl acetate soluble fractions, namely fractions A and B from an ethanolic extract of Ficus septica leaves and cytotoxic effect on T47D breast cancer cells. Preparation of both fractions involved maceration of leaves with 70% (v/v) ethanol, filtration with $Al_2O_3$, precipitation with 0.1 N HCl, Mayer reagent, and 0.1 N NaOH, and also partition with ethyl acetate. Qualitative thin layer chromatography (TLC) was conducted to determine the profile of alkaloids in the two fractions, using alkaloid specific reagents such as Dragendorff, sodium nitrite, and Van Urk-Salkowski. Cytotoxic effects of both fractions on T47D cells were evaluated using MTT assay with a concentration series of 1.56; 3.12; 6.25; 12.5; 25 and $50{\mu}g/mL$. The TLC test showed that fractions A and B contained alkaloids with Rx values of 0.74 and 0.80 for fraction A and 0.74, 0.84, 0.92 for fraction B with regard to yohimbine using the mobile phase of n-buthanol:glacial acetic acid:distilled water (3:1:1 v/v/v). Moreover, an indole alkaloid was detected with Rx values of 0.80 and 0.84, respectively. Fractions A and B exhibited high cytotoxic effects on T47D cells with IC50 values of 2.57 and $2.73{\mu}g/mL$, respectively. In conclusion, overall the results of this study showed that fractions of Ficus septica contain alkaloids including indole alkaloid or its derivatives and possess a cytotoxic effect on T47D cells. This research supports the idea that alkaloids in F. septica have anticancer activity.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.1
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• pp.63.1-63.1
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• 2011

M82 is a famous starburst galaxy which is dominated by young stellar populations and ISM. Some previous studies indicated the existence of intermediate-age and old stellar population in this galaxy, but little is known about them. We present a study of old globular clusters in M82 using the Hubble Space Telescope archive data. From the cluster survey of M82 we found 650 star clusters. We divided them into disk and halo star clusters according to their position. The color-color diagrams show that all 19 halo star clusters are old globular clusters. The disk sample may include both reddened young clusters and geniune old globular clusters. We estimated their ages using spectral energy distribution fit method with six filter data covering from ultraviolet (F330W) to infrared (F160W), and found that 30 of them are older than 3 Gyr. These are considered to be disk globular clusters. Twelve of the halo globular clusters are found to be partially resolved into their member stars. The (B-V) color range of the halo globular clusters is consistent with that of the Milky Way globular clusters, but most of M82 globular clusters are bluer than (B-V)=0.7. The existence of these old globular clusters suggests that the starburst galaxy M82 has an old stellar halo that may be as old as the Milky Way halo.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• Journal of Microbiology and Biotechnology
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• v.22 no.3
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• pp.343-351
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• 2012

In this paper, the kinetics of a cloned special glucosidase, named ginsenosidase type III hydrolyzing 3-O-glucoside of multi-protopanaxadiol (PPD)-type ginsenosides, were investigated. The gene (bgpA) encoding this enzyme was cloned from a Terrabacter ginsenosidimutans strain and then expressed in E. coli cells. Ginsenosidase type III was able to hydrolyze 3-O-glucoside of multi-PPD-type ginsenosides. For instance, it was able to hydrolyze the 3-O-${\beta}$-D-(1${\rightarrow}$2)-glucopyranosyl of Rb1 to gypenoside XVII, and then to further hydrolyze the 3-O-${\beta}$-D-glucopyranosyl of gypenoside XVII to gypenoside LXXV. Similarly, the enzyme could hydrolyze the glucopyranosyls linked to the 3-O-position of Rb2, Rc, Rd, Rb3, and Rg3. With a larger enzyme reaction $K_m$ value, there was a slower enzyme reaction speed; and the larger the enzyme reaction $V_{max}$ value, the faster the enzyme reaction speed was. The $K_m$ values from small to large were 3.85 mM for Rc, 4.08 mM for Rb1, 8.85 mM for Rb3, 9.09 mM for Rb2, 9.70 mM for Rg3(S), 11.4 mM for Rd and 12.9 mM for F2; and $V_{max}$ value from large to small was 23.2 mM/h for Rc, 16.6 mM/h for Rb1, 14.6 mM/h for Rb3, 14.3 mM/h for Rb2, 1.81mM/h for Rg3(S), 1.40 mM/h for Rd, and 0.41 mM/h for F2. According to the $V_{max}$ and $K_m$ values of the ginsenosidase type III, the hydrolysis speed of these substrates by the enzyme was Rc>Rb1>Rb3>Rb2>Rg3(S)>Rd>F2 in order.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1029-1033
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• 1997

A prototype MFSFET using ferroelectric fluoride BaMgF$_4$as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultrai-high vacuum system at a substrate temperature of below 30$0^{\circ}C$ and an in-situ post-deposition annealing was conducted for 20 seconds at $650^{\circ}C$ in the same chamber. The interface state density of the BaMgF$_4$/Si(100) interface calculated by a MFS capacitor fabricated on the same wafer was about 8$\times$10$^{10}$ /cm$^2$.eV. The I$_{D}$-V$_{G}$ characteristics of the MFSFET show a hysteresis loop due to the ferroelectric nature of the BaMgF$_4$film. It is also demonstrated that the I$_{D}$ can be controlled by the “write” plus which was applied before the measurements even at the same “read”gate voltage.ltage.