• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.66-72
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• 2010

In this paper, AZO thin film was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method from a ZnO target mixed with 2[wt%] Al2O3. The flexible film-typed dye sensitized solar cell(F-DSC) was fabricated and photo-electric conversion efficiency was investigated. The results showed that the minimum resistivity and the maximum deposition rate of AZO conducting film were recorded as $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$ and 25.5[nm/min], respectively at r.f. power of 220[W]. From the analysis of XPS data an improvement of electrical resistivity or an increase in carrier concentration with increasing sputtering power may be related to the generation of lattice imperfections as a result of increasing component ratio of O1s/Zn2p, which generates donor carriers or active growth of crystalline grain. The photo-electric conversion efficiency of F-DSC with AZO conducting electrode was over 2.79[%], which was comparable as that with commercially available ITO electrode.

• Honam Mathematical Journal
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• v.34 no.3
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• pp.409-422
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• 2012

Let $\mathcal{L}$ be a subspace lattice on a Hilbert space $\mathcal{H}$. And let X and Y be operators acting on a Hilbert space $\mathcal{H}$. Let $sp(x)=\{{\alpha}x\;:\;{\alpha}{\in}\mathcal{C}\}$ $x{\in}\mathcal{H}$. Assume that $\mathcal{H}=\overline{range\;X}{\oplus}sp(h)$ for some $h{\in}\mathcal{H}$ and < $h$, $E^{\bot}Xf$ >= 0 for each $f{\in}\mathcal{H}$ and $E{\in}\mathcal{L}$. Then there exists an operator A in Alg$\mathcal{L}$ such that AX = Y if and only if $sup\{\frac{{\parallel}E^{\bot}Yf{\parallel}}{{\parallel}E^{\bot}Yf{\parallel}}\;:\;f{\in}H,\;E{\in}\mathcal{L}\}$ = K < ${\infty}$. Moreover, if the necessary condition holds, then we may choose an operator A such that AX = Y and ${\parallel}||A{\parallel}=K$.

• Honam Mathematical Journal
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• v.29 no.1
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• pp.55-60
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• 2007

Given operators X and Y acting on a Hilbert space $\cal{H}$, an interpolating operator is a bounded operator A such that AX = Y. In this article, we showed the following : Let $\cal{L}$ be a subspace lattice acting on a Hilbert space $\cal{H}$ and let X and Y be operators in $\cal{B}(\cal{H})$. Let P be the projection onto $\bar{rangeX}$. If FE = EF for every $E\in\cal{L}$, then the following are equivalent: (1) $sup\{{{\parallel}E^{\perp}Yf\parallel\atop \parallel{E}^{\perp}Xf\parallel}\;:\;f{\in}\cal{H},\;E\in\cal{L}\}\$ < $\infty$, $\bar{range\;Y}\subset\bar{range\;X}$, and < Xf, Yg >=< Yf,Xg > for any f and g in $\cal{H}$. (2) There exists a self-adjoint operator A in Alg$\cal{L}$ such that AX = Y.

• The Pure and Applied Mathematics
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• v.14 no.3
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• pp.161-166
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• 2007

Given operators X and Y acting on a Hilbert space H, an interpolating operator is a bounded operator A such that AX = Y. An interpolating operator for n-operators satisfies the equation $AX_i=Y_i$, for i = 1,2,...,n. In this article, we showed the following: Let L, be a subspace lattice on a Hilbert space H and let X and Y be operators in B(H). Then the following are equivalent: (1) $$sup\{\frac{{\parallel}E^{\bot}Yf{\parallel}}{{\overline}{\parallel}E^{\bot}Xf{\parallel}}\;:\;f{\epsilon}H,\;E{\epsilon}L}\}\;<\;{\infty},\;sup\{\frac{{\parallel}Xf{\parallel}}{{\overline}{\parallel}Yf{\parallel}}\;:\;f{\epsilon}H\}\;<\;{\infty}$$ and $\bar{range\;X}=H=\bar{range\;Y}$. (2) There exists an invertible operator A in AlgL such that AX=Y.

• Proceedings of the Korea Contents Association Conference
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• 2013.05a
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• pp.369-370
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• 2013

Orthomodular lattice is a mathematical description of quantum theory which is based on the family CS(H) of all closed subspaces of a Hilbert space H. A partial multiplier is a function F from a non-empty subset D of a commutative semigroup A into A such that F(x)y = xF(y) for every elements x, y in A. In this paper, we define the notion of multipliers on orthomodular lattices and give some properties of multipliers. Also, we characterize some properties of orthomodular lattices by multipliers.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.525-532
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• 1992

Fluorine-doped YBaS12TCuS13TOS17-xTFS1yT superconducting materials with y varing two orders of magnitude form 0.02 to 2.0 have been prepared by a sol-gel process by using metal nitrate salts, sodium hydroxide and sodium fluoride. Fluorine contents have been measured using an ion-selective electrode. All fluorine doped as reactant were found to be present in the resulted samples. From the observation of XRD it has been concluded that the samples with y 0.2 formed simply the single phase of perovskite structure, whereas those with y 0.5 yielded together some compounds such as BaFS12T, YFS13T and CuO in the resulted samples. The observation of solid state S019TF NMR has been carried out in order to check whether fluorine was actually incorporated into the lattice sites, and the experimental results revealed that the mole ratio of fluorine incorporated into the lattice sites of YBaS12TCuS13TOS17-xT was approximately 0.2 per mole of the compound. Also electrical resistivity measurement indicated that onset transition temperature has the tendency to increase slightly with increasing y in the dilute region as y 0.2.

• Honam Mathematical Journal
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• v.31 no.2
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• pp.259-265
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• 2009

Let $\mathcal{L}$ be a subspace lattice on a Hilbert space $\mathcal{H}$. Let x and y be vectors in $\mathcal{H}$ and let $P_x$ be the projection onto sp(x). If $P_xE$ = $EP_x$ for each E ${\in}\;\mathcal{L}$, then the following are equivalent. (1) There exists an operator A in Alg$\mathcal{L}$ such that Ax = y, Af = 0 for all f in $sp(x)^{\perp}$ and A ${\geq}$ 0. (2) sup ${\frac{{\parallel}E^{\perp}y{\parallel}}{{\parallel}E^{\perp}x{\parallel}}:E{\in}\mathcal{L}}$ < ${\infty}$ < x, y > ${\geq}$ 0. Let X and Y be operators in $\mathcal{B}(\mathcal{H})$. Let P be the projection onto $\overline{rangeX}$. If PE = EP for each E ${\in}\;\mathcal{L}$, then the following are equivalent: (1) sup ${\frac{{\parallel}E^{\perp}Yf{\parallel}}{{\parallel}E^{\perp}Xf{\parallel}}:f{\in}\mathcal{H},E{\in}\mathcal{L}}$ < ${\infty}$ and < Xf, Yf > ${\geq}$ 0 for all f in H. (2) There exists a positive operator A in Alg$\mathcal{L}$ such that AX = Y.

• Bulletin of the Korean Chemical Society
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• v.16 no.12
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• pp.1184-1189
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• 1995

The rapid quenching dynamics of F center excitation by OH- defects in KCl crystals are investigated by monitoring ground state absorption bleach recovery, using a picosecond streak camera absorption spectrometer. F center absorption bleach in OH--doped crystals shows three distinguishable recovery components with the current temporal resolution, designated as slow, medium and fast components. The slow one is due to the normal relaxation process of F* centers as found in OH--free crystals. The others are consequent on energy transfer from electronically excited F centers to OH--vibrational levels. The fast component is a minor energy transfer process and resulting from the relaxation of somewhat distant, not the closest, associated pairs of F* and OH- defects. The energy transfer between widely separated F* and OH- defects opens up a recovery process via the medium component which is assisted by OH- librations, lattice vibrations and OH- dipole reorientations. The quenching behaviors of F* luminescence and photoionization by OH- are explained well by the relaxation process of the medium component.

• Bulletin of the Korean Chemical Society
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• v.19 no.10
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• pp.1063-1068
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• 1998

The nature of F electronic excitation energy transfer to OH- vibrational levels in KCl crystals is the exchange interaction, although the transfer process exhibits three temporally distinguishable components depending on the distance between excited F center and OH-. The critical distance as well as rate of the major energy transfer process in randomly distributed samples increases rapidly as OH- librational motions become active with temperature rise. The excited state character introduced into the OH- ground electronic state by perturbation is essential for the exchange interaction. The perturbation is brought about by the expanded electron cloud of excited F center for OH- associated to F center, whereas by librations and lattice vibrations perpendicular to the bond axis for isolated OH- . F excitation quenching efficiency by OH- is dependent on the variation of the critical distance rather than the rate as the rate is much faster than the normal F bleach recovery rate.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.