• 제목/요약/키워드: F-gas

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$SF_6/N_2$ 혼합기체의 대기압 플라즈마 특성 분석 (The Analysis of $SF_6/N_2$ Plasma Properties Under the Atmosphere Pressure)

  • 소순열;이진
    • 전기학회논문지P
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    • 제58권4호
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    • pp.516-520
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    • 2009
  • Atmosphere Plasmas of Gas Discharge (APGD) have been used in plasma sources for material processing such as etching, deposition, surface modification, etc. This study is to investigate and understand the fundamental plasma discharge properties. Especially, $SF_6/N_2$ mixed gas would be used in power transformer, GIS (Gas insulated switchgear) and so on. In this paper, we developed a one dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). 38 kinds of $SF_6/N_2$ plasma particles which are an electron, two positive ions (${SF_5}^+$, ${N_2}^+$), five negative ions (${SF_6}^-$, ${SF_5}^-$, ${SF_4}^-$, ${F_2}^-$, ${F_1}^-$), thirty excitation and vibrational particles for $N_2$ were considered in this computation. The $N_2$ gases of 20%, 50%, 80% were mixed in $SF_6$ gas. As the amount of $N_2$ gas was increased, the properties of electro-negative plasma moved toward the electro-positive plasma.

시간 분해능 전자회절 분광법을 이용한 CClF3분자의 평형 구조 연구 (Equilibrium Structure for CClF3 Using Real-Time and Time-Resolved Gas Electron Diffraction)

  • Seo, Seong S.;Ewbank, John D.
    • 대한화학회지
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    • 제48권4호
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    • pp.339-350
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    • 2004
  • 피코초 시간분해능 전자 회절 분광법(TRED)을 이용하여 $CClF_3$ 분자의평형 구조를 연구하였다. 이 분광법의 분해능은 전자파의 선폭에 의하여 결정된다. 본 연구 방법에 의하여 결정된 $CClF_3$ 분자의 결합 길이들을 고전적인 실시간 전자회절 분광법(GED/RT)에 의하여 보고된 결과들과 비교하였다. GED/RT 방법에 의하여 결정된 C-F 결합 길이와 C-Cl 결합 길이는 각각 132.00(2) pm, 175.20(3) pm이고, TRED 방법에 의하여 결정된 C-F, C-Cl 결합 길이는 각각 132.23(13) pm, 177.23(19) pm 로써 이 두 실험 방법에 의하여 결정된 분자 결합 길이는 좋은 일치성을 보여준다.

Infrared Multiphoton Dissociation of $CHCl_2F$: Reaction Mechanisms and Product Ratio Dependence on Pressure and Laser Pulse Energy

  • Song, Nam-Woong;Lee, Won-Chul;Kim, Hyong-Ha
    • Journal of Photoscience
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    • 제12권2호
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    • pp.101-107
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    • 2005
  • Infrared multiphoton dissociation of $CHCl_2F$ was studied using $CO_2$ laser excitation. Three products, $C_2Cl_2F_2$, $C_2ClF_3$, and $C_2HClF_2$, were identified by the analysis of the gas mixture from the photoreaction of $CHCl_2F$. The dependence of the reaction probability on added Ar gas pressure and excitation laser pulse energy was investigated. At low pressure (< 10 torr), the reaction probability increased as Ar pressure increased due to the rotational hole-filling effect, while it diminished with the increase of Ar pressure at high pressure (> > 20 torr) due to the collisional deactivation. The ratio of two products $(C_2ClF_3/C_2Cl_2F_2)$ decreased at low pressure (< 10 torr) and increased at high pressure (> 20 torr) with the increase of Ar pressure. The log-log plot of the reaction probability vs. laser pulse energy (${\\phi}$) was found to have a linear relationship, and its slope decreased as the added Ar pressure was increased. The reaction mechanisms for product formation have been suggested and validated by experimental evidences and considering the energetics. Fluorine-chlorine exchange reaction in the intermediate complex has been suggested to explain the formation of $C_2ClF_3$.

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UV-excited $F_2/H_2$를 이용한 실리콘 자연산화막 제거에 관한 연구 (A Study on the Removal of Native Oxide on a Silicon Surface Using UV-Excited $F_2/H_2$)

  • 최성호;최진식;김성일;구경완;천희곤
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1528-1530
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    • 1997
  • As device size shrinks, contamination will increasingly affect the reliability and yield of device. Therefore, contaminants must be removed from the surfaces of Si wafers prior to each process. But it becomes out increasingly difficult to clean silicon surfaces with finer patterns by the conventional wet treatment because of the viscosity and surface tension of solutions. Hence, a damage less dry cleaning process is needed for the silicon surfaces. For the removal of Si native oxide by UV-enhanced dry cleaning. $F_2$ gas and $F_2/H_2$ mixed gas were applied. As a result of analysis, UV-enhnaced $F_2/H_2$ treatment is more suitable than UV-enhanced $F_2$ treatment for removal of native oxide on the surfaces of Si wafers.

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Deposition of Super Hydrophobic a-C:F Films by Dielectric Barrier Discharge at Atmospheric Pressure

  • Kim, Duk-Jae;Kim, Yoon-Kee;Han, Jeon-Geon
    • 한국표면공학회지
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    • 제44권2호
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    • pp.50-54
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    • 2011
  • Hydrophobic a-C:F film was coated on polycarbonate film with $CF_4$, $C_2F_6$ and HFC ($C_2F_4H_2$) gas in helium discharge generated by 5~100 kHz AC power supply at atmospheric pressure and room temperature. The highest water contact angle of the a-C:F film formed with $He/C_2F_6$ mixed gas is $155^{\circ}$. X-ray photoelectron spectrum showed that there was 40% of C-$CF_3$ bond at the surface of the super hydrophobic film. The contact angle and deposition rate were decreased with increasing substrate temperature. The contact angle was generally increased with the surface roughness of the film. The contact angle was high when the surface microstructure of the film was fine and sharp at the similar roughness and chemical composition of the surface.

Si-Al-SiO2-NH4F(β-Si3N4)계에서 연소반응에 의한 β-SiAlON분말의 제조 (Preparation of β-SiAlON Powder by Combustion Reaction in the System of Si-Al-SiO2-NH4F(β-Si3N4))

  • 민현홍;신창윤;원창환
    • 한국세라믹학회지
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    • 제43권10호
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    • pp.595-600
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    • 2006
  • The preparation of $\beta$-SiAlON powder by SHS in the system of $Si-Al-SiO_2-NH_4F(\beta-Si_3N_4)$ was investigated in this study. In the preparation of SiAlON powder, the effect of gas pressure, compositions such as Si, $NH_4F$, \beta-Si_3N_4$ and additive in mixture on the reactivity were investigated. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure $\beta$-SiAlON was $3Si+Al+2SiO_2+NH_4F$. The $\beta$-SiAlON powder synthesized in this condition was a single phase $\beta$-SiAlON with a rod like morphology.

In Vitro and In Vivo Inhibitory Effects of Gaseous Chlorine Dioxide against Fusarium oxysporum f. sp. batatas Isolated from Stored Sweetpotato: Study II

  • Lee, Ye Ji;Jeong, Jin-Ju;Jin, Hyunjung;Kim, Wook;Jeun, Young Chull;Yu, Gyeong-Dan;Kim, Ki Deok
    • The Plant Pathology Journal
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    • 제35권5호
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    • pp.437-444
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    • 2019
  • Chlorine dioxide ($ClO_2$) has been widely used as an effective disinfectant to control fungal contamination during postharvest crop storage. In this study, Fusarium oxysporum f. sp. batatas SP-f6 from the black rot symptom of sweetpotato was isolated and identified using phylogenetic analysis of elongation factor 1-${\alpha}$ gene; we further examined the in vitro and in vivo inhibitory activities of $ClO_2$ gas against the fungus. In the in vitro medium tests, fungal population was significantly inhibited upon increasing the concentration and exposure time. In in vivo tests, spore suspensions were drop-inoculated onto sweetpotato slices, followed by treatment using various $ClO_2$ concentrations and treatment times to assess fungus-induced disease development in the slices. Lesion diameters decreased at the tested $ClO_2$ concentrations over time. When sweetpotato roots were dip-inoculated in spore suspensions prior to treatment with 20 and 40 ppm of $ClO_2$ for 0-60 min, fungal populations significantly decreased at the tested concentrations for 30-60 min. Taken together, these results showed that $ClO_2$ gas can effectively inhibit fungal growth and disease development caused by F. oxysporum f. sp. batatas on sweetpotato. Therefore, $ClO_2$ gas may be used as a sanitizer to control this fungus during postharvest storage of sweetpotato.

KrF$^*$형성의 완충기체 영향에 대한 이론적 해석 (Theoretioal analysis of the buffer gas effects in a KrF$^*$ formation)

  • 최부연
    • 한국광학회:학술대회논문집
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    • 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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    • pp.3-8
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    • 1990
  • 방전여기 방식의 KrF 엑사이머 레이저의 컴퓨터 시뮬레이션 프로그램을 개발하여 방전중의 KrF 형성, 탈여기 및 흡수채널에서 완충가스의 영향을 이론적으로 해석하였다. 생성효율은 Ne 완충가스에서 He보다 2.2배 정도 높았으며, KrF의 탈여기는 He과 Ne 완충가스에서 각각 50%, 30% 정도의 비율을 차지하였다. 그러나 흡수 과정에서는 완충가스의 영향이 크지 않은 것을 알 수 있었다.

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연료 과농 가스발생기의 연소 가스 물성치에 관한 연구 (Study on Combustion Gas Properties of a Fuel-Rich Gas Generator)

  • 서성현;최환석;한영민;김성구
    • 한국항공우주학회지
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    • 제34권10호
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    • pp.56-60
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    • 2006
  • 액체 로켓 엔진용 가스발생기 개발을 위해서는 추진제 O/F ratio에 따른 연소 가스의 열역학적 물성치 예측이 필수적이다. 본 연구에서는 액체산소/Jet A-1 조합의 연료 과농 가스발생기의 실 추진제 연소 시험을 통해 O/F ratio 변화에 따른 연소 생성 가스의 온도를 계측하였다. 또한 연소실 내 동압 섭동 측정 및 정압 측정 결과를 이용하여 비열비, 가스 상수, 정압 비열과 같은 연소 가스의 열역학적 물성치를 간접적으로 산출해내었다. 본 실험값은 화학평형코드 결과를 통해 구한 보간 계수를 이용한 예측 결과와 비교해보았을 때 동일한 경향 및 유사한 값을 가지는 것으로 밝혀졌으며 이는 보간 계수 예측 방법이 설계 도구로 충분히 적용 가능하다는 결과를 확인하였다.