• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.33-39
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• 1990

By developing a computer simulation code for discharge excited KrF excimer laser, we analyzed mainly the effects of buffer gas for the $KrF^*$ formation. the $KrF^*$ relaxation. and the absorption of the laser radiation. The $KrF^*$ formation efficiency were found to be 7.5%, 19% and the $KrF^*$ relaxation kinetic reactions were found to be 45%, 30% at the charging voltage of 30 KV and He. Ne buffer gas. respectively. But the absorption of the 248 nm laser radiation were less than 10% by the buffer gas.er gas.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.2111-2116
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• 2004

This paper shows how to improve the efficiency and output and to reduce NOx emission of Seoinchon GE 7F gas turbine, Korea Western Power Co. by replacing the existing 7F gas turbine with new 7FA+e gas turbine because the performance of 7F gas turbine was degraded due to long term operation. In this paper, we will study gas turbine development trend and O&M technology. Finally, we will review for uprate of Seoinchon 7F gas turbine to help someone to improve their units in the future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• Tribology and Lubricants
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• v.20 no.5
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• pp.231-236
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• 2004

Sulfur Hexafluoride, S $F_{6}$ is widely used for leak detection and as a gaseous dielectric in transformers, condensers and circuit breakers. S $F_{6}$ gas is also effective as a cleanser in the semiconductor industry. This paper presents a numerical study of the sealing force of disk type seal in S $F_{6}$ gas safety valve. The sealing force on the disk seal is analyzed by the FEM method based on the Taguch's experimental design technique. Disk seals in S $F_{6}$ gas safety valve are designed with 9 design models based on 3 different contact length, compressive ratio and gas pressure. The calculated results of Cauchy stress and strain showed that the sealing characteristics of Teflon $^{ }$PTFE is more effective compared to that of FKM(Viton), which is related to the stiffness of the materials. And also, the contact length of the disk seal is important design parameter for sealing the S $F_{6}$ gas leakage in the safety valve.afety valve.

• Journal of the Korean Society of Propulsion Engineers
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• v.8 no.2
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• pp.10-17
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• 2004

The results of the combustion performance tests of gas generator which supplies hot gas into the turbine of turbo-pump for liquid rocket engine and uses LOx and kerosene as propellant are described. The gas generator consists of a injector head with F-O-F impinging injector, a water cooled combustion chamber, a gas torch igniter, a turbulence ring and an instrument ring. The effect of turbulence ring and combustion chamber length on performance of gas generator are investigated. The ignition and combustion at design point are stable and the pressure and gas temperature at gas generator exit meets the target. The turbulence ring installed at middle of chamber effectively mixes hot gas with cold gas and the effect of residence time of hot gas in gas generator on combustion efficiency is small. Test results show that the main parameter controlling the gas temperature at gas generator exit is overall O/F ratio.

• BMB Reports
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• v.52 no.5
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• pp.336-341
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• 2019

The cGAS-STING pathway plays an important role in pathogen-induced activation of the innate immune response. The 29-kDa amino-terminal fibronectin fragment (29-kDa FN-f) found predominantly in the synovial fluid of osteoarthritis (OA) patients increases the expression of catabolic factors via the toll-like receptor-2 (TLR-2) signaling pathway. In this study, we investigated whether 29-kDa FN-f induces inflammatory responses via the cyclic GMP-AMP synthase (cGAS)/stimulator of interferon gene (STING) pathway in human primary chondrocytes. The levels of cGAS and STING were elevated in OA cartilage compared with normal cartilage. Long-term treatment of chondrocytes with 29-kDa FN-f activated the cGAS/STING pathway together with the increased level of gamma-H2AX, a marker of DNA breaks. In addition, the expression of pro-inflammatory cytokines, including granulocyte-macrophage colony-stimulating factor (GM-CSF/CSF-2), granulocyte colony-stimulating factor (G-CSF/CSF-3), and type I interferon ($IFN-{\alpha}$), was increased more than 100-fold in 29-kDa FN-f-treated chondrocytes. However, knockdown of cGAS and STING suppressed 29-kDa FN-f-induced expression of GM-CSF, G-CSF, and $IFN-{\alpha}$ together with the decreased activation of TANK-binding kinase 1 (TBK1), interferon regulatory factor 3 (IRF3), and inhibitor protein ${\kappa}B{\alpha}$ ($I{\kappa}B{\alpha}$). Furthermore, NOD2 or TLR-2 knockdown suppressed the expression of GM-CSF, G-CSF, and $IFN-{\alpha}$ as well as decreased the activation of the cGAS/STING pathway in 29-kDa FN-f-treated chondrocytes. These data demonstrate that the cGAS/STING/TBK1/IRF3 pathway plays a critical role in 29-kDa FN-f-induced expression of pro-inflammatory cytokines.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.145-152
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• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

• Journal of Energy Engineering
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• v.16 no.2
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• pp.58-63
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• 2007

In recent years, the technologies for the production of synthetic fuel from natural gas have been attracting considerable interest because of high oil prices. While oil prices remaining high, GTL (Gas-to-Liquids) technology would provide an attractive option for utilizing gas resources. Furthermore, GTL fuels contain almost zero sulfur and low aromatics and have a very high cetane so that they are estimated to be environmentally friendly diesel fuels able of meeting the advanced fuel specifications of the 21st century. GTL process generally consists of three primary steps: synthesis gas production from natural gas reforming, hydrocarbon production from synthesis gas by Fischer-Tropsch (F-T) synthesis, product upgrading by hydrocracking/hydroisomerization. This paper presents a brief summary of GTL technology and worldwide development trend about it focusing on the reforming of natural gas and the F-T synthesis.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1544-1545
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• 2011

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. Processing plasma etching of semiconductor, and research are being used in the etching source $C_4F_6$ gas may be used by itself and mixed with other gases are also used. However, the molecular gas $C_4F_6$ study on the characteristics of the electron transport and the cross-sectional area of the decision is still lacking. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients. And to understand and interpret physical properties of the ionization coefficient ${\alpha}$/N, and the attachment coefficient ${\eta}$/N in $C_4F_6$ gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.305-310
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• 2008

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.