• Electrical & Electronic Materials
• /
• v.9 no.9
• /
• pp.900-905
• /
• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

• Korean Journal of Materials Research
• /
• v.16 no.2
• /
• pp.129-136
• /
• 2006

In order to get basic information on the reference electrode material for the long life Al concentration sensor in zinc galvanizing melt, the workability and stability of fluorine potential cell with $CaF_2$ single crystal electrolyte were examined carefully at constant temperature for six kinds of reference materials (Zn, Sn, Cd, Bi, Pb, Al-Sn alloy + fluorides). Good workability and stability of the sensor were found in sensor with $Bi+BiF_3$ reference electrode. The Al sensor with $Bi+BiF_3$ reference electrode was assembled and was tested in Zn-Al melt with different Al concentration. The EMF was changed rapidly with the change of Al concentration and was stabilized in a short time. Thus the response of EMF was satisfactory for $CaF_2$ sensor. The correlationship between EMF from the sensor and logarithm of Al concentration has been derived from the least square regression method. E/mV=57.515log[wt% Al]+1883.3 R=0.9717 ($0.013{\leq}[wt% Al]{\leq}0.984$) The EMF from Al sensor was increased linearly against logarithm of [wt% Al]. The fluorine potential of Zn-Al melt was also calculated to be in the range of $10^{-60}{\sim}10^{-61}$ Pa for the present experiemental condition.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.720-725
• /
• 1995

Bi-substituted gadolinium iron garnet films were deposited on GGG(111) and NGG (111) substrates by irradiating KrF excimer laser onto targets having compositions of $Bi_{x}Gd_{3-x}Fe_{5}O_{12}$ ($2.0{\leq}x{\leq}3.0$) under substrate temperature of $580~620^{\circ}C$. Analysis on structure, composition and angle of Faraday rotation, ${\theta}_{F}$, were carried out. The composition, the structure and the magneto-optical properties of the obtained films were found to be strongly dependent both on the compositions of the targets and on the pressure of oxygen. Before annealing in air, all films showed ${\theta}_{F}{\geq}0$ at ${\lambda}=6328{\AA}$, while several films showed ${\theta}_{F}{\leq}0$ after the annealing. The highest value of Bi-substitution up to x = 1.76 with uniform composition was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.313-314
• /
• 2006

$BiNbO_4$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 5~20 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability and temperature coefficient of resonant frequency(${\tau}_f$), but it decreased the dielectric constant(${\varepsilon}_r$) and quality factor($Q{\times}f_0$) significantly due to the formation of an excessive liquid. The sintered $BiNbO_4$ ceramics at $900^{\circ}C$ with 15 wt% ZBS glass demonstrated 25 in dielectric constant(${\varepsilon}_r$), 3,700 in quality factor($Q{\times}f_0$), and -32 $ppm/{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Korean Journal of Materials Research
• /
• v.4 no.1
• /
• pp.97-106
• /
• 1994

The dependence of the electrical resistivity on the eutectic composition and growth rates was investigated in the unidirectionally solidified Sb-InSb and Sn-Bi eutectic alloy systems, which were generally classified into the groups of f-f and nf-f eutectic system. Sb-InSb alloys containing 26-34wt.% In and Sn-Bi alloys containing 53-65wt.%Bi were prepared in vacuum sealed in a silica tube, and then these were unidirectionally solidified. Electrical resistivity of the specimens prepared by cutting the crystal section in parallel with the transverse direction and by cutting in longitudinal direction was measured. As the growth rate increased, the Sb-InSb and Sn-Bi eutectic alloys showed that the resistivity of longitudinal to the growth direction was increased but that of transverse to the growth direction was decreased. In the case of Sb-InSb eutectic alloy, increas~ng the phase boundary area and decreasing the fiber directionallity caused to increase the $p \; \parallel$ , while increasing the phase boundary area increased the $p \; \\perp$ As expected, the eutectic microstructure could be analysed well in terms of electrical resistivity.

• Journal of the Korea Society of Computer and Information
• /
• v.27 no.8
• /
• pp.1-7
• /
• 2022

With the development of artificial intelligence, efforts to incorporate neuroscience mining with AI have increased. Neuroscience mining, also known as NSM, expands on this concept by combining computational neuroscience and business analytics. Using fNIRS (functional near-infrared spectroscopy)-based experiment dataset, we have investigated the potential of NSM in the context of the BPSC (business problem-solving creativity) prediction. Although BPSC is regarded as an essential business differentiator and a difficult cognitive resource to imitate, measuring it is a challenging task. In the context of NSM, appropriate methods for assessing and predicting BPSC are still in their infancy. In this sense, we propose a novel NSM method that systematically combines CNN, BiLSTM, and attention network for the sake of enhancing the BPSC prediction performance significantly. We utilized a dataset containing over 150 thousand fNIRS-measured data points to evaluate the validity of our proposed NSM method. Empirical evidence demonstrates that the proposed NSM method reveals the most robust performance when compared to benchmarking methods.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.5
• /
• pp.201-205
• /
• 2007

Low temperature sintering behavior and microwave dielectric properties of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}zinc$ borosilicate glass(ZBS) systems were investigated with a view to applying the composition to LTCC technology. The addition of $10{\sim}30$ wt% ZBS in both systems ensured successful sintering below $900^{\circ}C$. For the $BiNbO_{4^-}ZBS$ system, the sintering was completed when 15 wt% ZBS was added whereas 25 wt% ZBS was necessary for the $ZnNb_2O_{6^-}zinc$ system. Secondary phase was not observed in the $BiNbO_{4^-}ZBS$ system but a small amount of $ZnNb_2O_6$ with the willemite structure as the secondary phase was observed in the $ZnNb_2O_{6^-}ZBS$ system. In terms of dielectric properties, the application of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}ZBS$ systems sintered at $900^{\circ}C$ to LTCC were shown to be appropriate; $BiNbO_{4^-}15$ wt% ZBS($\varepsilon_r=25,\;Q{\times}f\;value=3,700GHz,\;\tau_f=-32ppm/^{\circ}C$) and $ZnNb_2O_{6^-}25$ wt% ZBS($\varepsilon_r=15.8,\;Q{\times}f\;value=5,400GHz,\;\tau_f=-98ppm/^{\circ}C$).

• Journal of the Korean Magnetics Society
• /
• v.13 no.1
• /
• pp.36-40
• /
• 2003

We have grown D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ (x = 0.5,1.0, 1.5,2.0) magnetic garnet thin films upon $Al_2$O3i and GGG substrate using Pechini process. The annealing temperature to get single phase D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ garnet is dependent on substrate, i.e. the annealing temperature for GGG substrate il 5$0^{\circ}C$ lower than that for $Al_2$ $O_3$ substrate. The grains of garnet thin film grown on GGG (111) plane align along [111] direction, and in this case the hysteresis curve does not saturate up to H : 5000 Oe. We attribute this phenomenon to rotation magnetization process. The maximum amount of Bi substitution in polycrystalline D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ thin film prepared by Pechini process is restricted to 2.0 Bi atom/unit cell, and this value is less than that in single garnet crystall grown by LPE method.own by LPE method.ethod.

• Journal of the Korean Electrochemical Society
• /
• v.3 no.4
• /
• pp.204-210
• /
• 2000

The control of dissolved aluminum concentration in the hot dip zinc galvanizing bath is greatly important in producing galvannealed steel sheets. The purpose of present study is to provide basic data for measurement of the aluminum concentration in site in hot dip zinc bath at the temperature of $460^{\circ}C\~500^{\circ}C$ using $CaF_2$ solid electrolyte sensor with three kinds of reference electrode. Good workability and stability of the sensor were confirmed with the $Bi+BiF_3$ reference electrode from the emf measurement. In order to measure the aluminum concentration in Zn-Al bath, the galvanic cell of fluorine ion was constructed with $CaF_2$ solid electrolyte as follows; $$(-)W|Zn-Al,\;AlF_3|CaF_2|Bi,BiF_3|W(+)$$. The emf measurement was made at the temperature of $460\pm10^{\circ}C$ in the Zn-Al bath. The following correlationship between aluminum concentration and emf was obtained by the least square regression analysis; $$E/mV=56.795log[\%Al]+1881.7\;R=0.9704$$,$$0.026wt\%{\leq}[\%Al]{\leq}0.984wt\%$$

• Proceedings of the Korean Magnestics Society Conference
• /
• 2013.05a
• /
• pp.19-20
• /
• 2013

Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.