• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.199-199
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• 2013

The distinctive cellular and mitochondrial dysfunctions of a human epithelial lung cancer cell line (H460) from a human lung fibroblastic normal cell line (MRC5) have been studied by dielectric barrier discharge (DBD) plasma treatment. The DBD plasma device have generated large amount of H2O2 and NOx in culture media which is dependent on plasma exposure time. It is found that the cell number of lung cancer cell H460 has been reduced more than the lung normal cell MRC5 as being increased exposure and incubation time. Also these both cell lines have showed mitochondria fragmentation under 5 minutes' plasma exposure, which is a clue of apoptosis. It is noted in this study that AnnexinV staining has showed not only early apoptosis, but also late apoptosis in lung cancer cell H460. Mitochondria enzyme activity and ATP generation have been also much reduced in lung cancer cell H460. Their mitochondrial membrane potential (${\Delta}{\psi}m$) has been found to be reduced in magnitude and shifted to the induced-potential level of cccp, while MRC5 mitochondrial membrane potential has been shifted slightly to that. These distinctively selective responses of lung cancer cell H460 from lung normal cell MRC5 gives us possibility of applying plasma to cancer therapy.

• Environmental Analysis Health and Toxicology
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• v.28
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• pp.5.1-5.7
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• 2013

Objectives Despite increasing availability of global positioning system (GPS), no research has been conducted to analyze GPS data for exposure opportunities associated with time at indoor and outdoor microenvironments. We developed location-based and time-weighted spatial measures that incorporate indoor and outdoor time-location data collected by GPS. Methods Time-location data were drawn from 38 female subjects in California who wore a GPS device for seven days. Ambient standard deviational ellipse was determined based on outdoor locations and time duration, while indoor time weighted standard deviational ellipse (SDE) was developed to incorporate indoor and outdoor times and locations data into the ellipse measure. Results Our findings indicated that there was considerable difference in the sizes of exposure potential measures when indoor time was taken into consideration, and that they were associated with day type (weekday/weekend) and employment status. Conclusions This study provides evidence that time-location weighted measure may provide better accuracy in assessing exposure opportunities at different microenvironments. The use of GPS likely improves the geographical details and accuracy of time-location data, and further development of such location-time weighted spatial measure is encouraged.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.9
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• pp.698-706
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• 2017

The risk of high power electromagnetic(HPEM) pulse exposure to the devices used in digital control system such as PLC(programmable logic controller) and communication cable is increasing. In this paper, two different frequency ranges HPEMs were exposed to those control systems to assess the each vulnerability. The vulnerability of the EUTs exposed from HPEM were analyzed and compared with a variation of distances and source power. As the EUTs were exposed to higher level of HPEM, the voltage and communication waveform of the control system had shown a distorted response. And the unshielded twisted pair(UTP) cable connected to the EUTs showed operation failures with induced voltage. However, the foiled twisted pair(FTP) cable shielded the connected device efficiently from the HPEM exposure. Therefore, the necessity of the protection measures against the vulnerability of HPEM exposure for the digital control system used in power facilities and industrial site were verified.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.32 no.6
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• pp.401-408
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• 2019

The objective of this study is to develop a new type of buried sensor module that can directly assess pre-stressed concrete by measuring strain using a hetero-core optical fiber sensor. In this regard, experiments were conducted to evaluate the performance of the sensor using an exposure sensor module. Based on the experimental results, when the values of the displacement control velocity were 0.12 mm/min and 1.80 mm/min, the corresponding delays in the measurement were 52.1 s and 2.6 s respectively, which indicated that the maximum delay between the two measurements was a factor of 19. Due to the measurement delay phenomena, the sensor module used in the experiments cannot be employed to check the real-time state of the structure. Thus, additional experiments were needed to develop a new sensor module that can measure the real-time state of the structure. To investigate the cause of the measurement delay phenomena, three experiments were conducted. It was confirmed that measurement delay is mainly attributed to frictional resistance. The measurement delay phenomena were not observed in the experiments using the friction-removed device.

• Journal of Radiation Industry
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• v.9 no.1
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• pp.1-7
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• 2015

The trend of x-ray image sensor has been evolved from an amorphous silicon sensor to a crystal silicon sensor. A crystal silicon X-ray sensor, meaning a X-ray CIS (CMOS image sensor), is consisted of three transistors (Trs), i.e., a Reset Transistor, a Source Follower and a Select Transistor, and a photodiode. They are highly sensitive to radiation exposure. As the frequency of exposure to radiation increases, the quality of the imaging device dramatically decreases. The most well known effects of a X-ray CIS due to the radiation damage are increments in the reset voltage and dark currents. In this study, a pixel array of a X-ray CIS was made of $20{\times}20pixels$ and this pixel array was exposed to a high radiation dose. The radiation source was Co-60 and the total radiation dose was increased from 1 to 9 kGy with a step of 1 kGy. We irradiated the small pixel array to get the increments data of the reset voltage and the dark currents. Also, we simulated the radiation effects of the pixel by MCNP (Monte Carlo N-Particle) simulation. From the comparison of actual data and simulation data, the most affected location could be determined and the cause of the increments of the reset voltage and dark current could be found.

• Journal of radiological science and technology
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• v.42 no.4
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• pp.291-299
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• 2019

The International Electrotechnical Commission (IEC) has regulated the definition and requirements of the exposure index (EI). In this study, we calculated the EI of several image receptors in digital radiography system of two different manufacturers according to the method as per IEC, and evaluated the relationship with incident air kerma. To calculate the EI, w e obtained the characteristics curve of each image receptor by increasing the incident air kerma at RQA 3, 5, 7 and 9, respectively. As a result, there was no significant difference in the EI values between different image receptors of the same manufacturer, but EI values of different manufacturer was different despite the same air kerma was incident. Therefore, understanding the characteristics of the digital radiography systems is important in order to use EI as a tool for measuring and managing the radiation dose.

• Korean Journal of Optics and Photonics
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• v.30 no.4
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• pp.146-153
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• 2019

The exposure system is a device that transfers a circuit pattern to a desired location. To display patterns on a substrate without deforming the optical characteristics, the characteristics of the optical exposure system are very important. Therefore, to form a microcircuit pattern, a small divergence angle should impinge on the irradiation area. Also, since the light from the source must react uniformly with the photosensitizer, it must have high luminance efficiency and uniformity of illumination. In this paper a parabolic reflector and an aspherical lens were designed to solve the problem of narrow-angle implementation, and it was confirmed by simulation analysis after their arrangement that the beam angle, uniformity, and maximum illuminance satisfied the target performance.

• Journal of Radiation Protection and Research
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• v.38 no.2
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• pp.78-90
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• 2013

Recently, the interest on exposure to radiation is rising. The radiation exposure of mammography is higher in absorbed dose than of X-ray, therefore unnecessary exposure needs to be reduced, and higher image quality is needed. Generally, ray quality of the radiation imaging is an important factor that determines image quality and the amount of ray exposure, and they are affected by tube voltage and added filter. The X-ray energy that is exposed from mammography device is generally a continuous spectrum, which includes low energy that has minute influence on the image quality, and high energy that hinders contrast on image. Currently, molybdenum (Mo) and rhodium (Rh) are the most used added filters for mammography device, and they are used differently according to the energy region of X-ray. This study aims to find out the degree of reduction in exposure dose according to the thickness of aluminum (Al), and to study the changes in image quality and dose when the added filter plates that are made with niobium (Nb) or zirconium (Zr) are used, other than molybdenum (Mo) and rhodium (Rh), the two most used added filters that have similar atomic number and K-absorption regions as Nb and Zr. In this study, single-added filters of molybdenum (Mo), niobium (Nb), and zirconium (Zr) are used, and in some cases, Aluminum (Al) is combined with the single filters. In this case, image quality is considered to be improved depending on the type of added filters, and by using Aluminum (Al) filter together with the others, unnecessary X-ray of low energy would be absorbed, therefore the dose is expected to decrease without any influence when the concentration level becomes identical.

• Korean Journal of Optics and Photonics
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• v.11 no.6
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• pp.429-433
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• 2000

A study of the tunable fiber DFB laser using PZT-stretcher is presented. The device has an laser ocsillator by using a fiber Bragg grating at 1559.4 nm written directly into a 3-cm long $Er^{3+}$ doped fiber. Post UV-exposure method to provide the necessary phase shift is used for a single mode operation. The device shows the single mode operation of $230\muW$ output power and has a narrow linewidth of 35 kHz. The lasing wavelength of the laser can be tuned in a range of 3 nm by stretching the grating.rating.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.19-24
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• 2004

In this paper, we have demonstrated the fabrication of a 70 nm foot print of the T-gate by using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure method without a thin dielectric supporting layer on the substrate. The device performance was characterized by DC and RF measurement. The fabricated 70 nm InGaAs/InAlAs MHEMTS with 70 ${\mu}{\textrm}{m}$ unit gate width and 2 fingers showed good DC and RF characteristics of Idss, max =228.6 mA/mm, gm =645 mS/mm, and fT =255 GHz, respectively.