• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• Journal of Information Display
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• 제2권3호
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• pp.1-5
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• 2001

The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.186-186
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• 2012

This report investigates a new synthetic route and the size-dependent optical and electrical properties of PbS nanocrystal quantum dots (NQDs) in diameters ranging between 1.5 and 6 nm. Particularly we synthesize ultra-small sized PbS NQDs having extreme quantum confinement with 1.5~2.9 nm in diameter (2.58~1.5 eV in first exciton energy) for the first time by adjusting growth temperature and growth time. In this region, the Stokes shift increases as decreasing size, which is testimony to the highly quantum confinement effect of ultra-small sized PbS NQDs. To find out the electrical properties, we fabricate self-assembled films of PbS NQDs using layer by layer (LBL) spin-coating method and replacing the original ligands with oleic acid to short ligands with 1, 2-ethandithiol (EDT) in the course. The use of capping ligands (EDT) allows us to achieve effective electrical transport in the arrays of solution processed PbS NQDs. These high-quality films apply to Schottky solar cell made in an glass/ITO/PbS/LiF/Al structure and thin-film transistor varying the PbS NQDs diameter 1.5~6 nm. We achieve the highest open-circuit voltage (＜0.6 V) in Schottky solar cell ever using PbS NQDs with first exciton energy 2.58 eV.

• 한국결정성장학회지
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• 제12권6호
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• pp.269-269
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• 2002

희박 자성 반도체 ZnMnTe를 장벽층으로 사용한 양질의 ZnTe/ZnMnTe 단일 양자우물 구조를 열벽적층 성장법으로 성장하였다. 고분해능 X-선 회절측정 결과 ZnTe 우물층이 강하게 스트레인을 받고 있음을 알 수 있었다. 광발광 측정으로부터 무거운 양공 엑시톤 (el-hhl)과 가벼운 양공 엑시톤 (el-lhl)의 매우 뾰족한 발광 크들이 나타남을 관측하였다. 또한 우물층의 두께가 증가함에 따라 (el-hhl)과 (el-lhl)의 엑시톤 관련 피크들은 낮은 에너지 쪽으로 이동하였다. 광발광 피크 세기의 온도에 따른 변화는 운반자들의 열적 활성화로 설명할 수 있었다.

• 한국결정성장학회지
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• 제12권6호
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• pp.267-271
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• 2002

희박 자성 반도체 ZnMnTe를 장벽층으로 사용한 양질의 ZnTe/ZnMnTe 단일 양자우물 구조를 열벽적층 성장법으로 성장하였다. 고분해능 X-선 회절측정 결과 ZnTe 우물층이 강하게 스트레인을 받고 있음을 알 수 있었다. 광발광 측정으로부터 무거운 양공 엑시톤 (el-hhl)과 가벼운 양공 엑시톤 (el-lhl)의 매우 뾰족한 발광 크들이 나타남을 관측하였다. 또한 우물층의 두께가 증가함에 따라 (el-hhl)과 (el-lhl)의 엑시톤 관련 피크들은 낮은 에너지 쪽으로 이동하였다. 광발광 피크 세기의 온도에 따른 변화는 운반자들의 열적 활성화로 설명할 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.84-84
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1654-1657
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• 2007

We demonstrate that the reduction of quantum efficiency with increasing current density in phosphorescent light emitting diodes (PhOLEDs) is related to the formation of excitons in hole transporting layer based on the analysis of emission spectra and exciton formation zone. By employing dual emitting layerm we could achieve maintaining quantum efficiency at high current density up to $10000\;cd/m^2$ as 13.1% compared to the devices with single emitting layer (S-EML) (${\eta}_{ext}$= 6.9% at $10000\;cd/m^2$).

• 한국결정성장학회지
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• 제13권3호
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• pp.105-110
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_{2}$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV, The exciton peak, $I_{1}^{d}$ at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_{1}^{d}$ peak was dominantly observed in the ZnSe/GaAs : Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs : Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{se}-V_{zn})-V_{zn}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.25-28
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• 2004

Photocurrent spectrum, photoresponse, and I-V measurements were made for close-packed HgTe nanoparticles without organic capping materials to investigate their photocurrent characteristics in the infrared range. In absorption and photoluminescence (PL) spectra taken for the close-packed nanoparticles film, the wavelengths of exciton peaks was red-shifted, compared with organic capped HgTe nanoparticles dispersed in solution. This red-shift is caused by the lessening of the exciton binding energy. The I-V curves and photoresponse for the close-packed nanoparticles film reveal their dark current and fast photoresponse with no current decay, respectively. The observation suggests that the HgTe nanoparticles are a very prospect material applicable for photodetectors in the whole IR range.

• Journal of Photoscience
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• 제7권1호
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• pp.27-30
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• 2000

The Photoluminescence (PL) measurement results of a very good quality GaN sample grown by metalorganic chemical vapor deposition (MOCVD) are reported. The temperature dependences of peak position, emission intensity, and the full width at half maximum (FWHM) of free-exciton (FX) A and B are presented. Our results show the fast thermal quenching of FX transition intensities and predominantly acoustic phonon scattering of emission line broadening. The transition-energy-shift following the Varshni's empirical equation, and by using it to fit the data, E$\_$A1/(T) = 3.4861 eV -6.046 $\times$ 10$\^$-4/T$^2$ (620.3+ T) eV, E$\_$B1/(T) = 3.4928 eV -4.777 $\times$ 10$\^$-4/T$^2$ / (408.2+ T) eV and E$\_$A2/ = 3.4991 eV -4.426 $\times$ 10$\^$-4/ T$^2$ / (430.6+ T) eV for A(n=1), B(n=1), and A(n=2) are obtained respectively.