• 한국재료학회지
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• 제22권3호
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• pp.145-149
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• 2012

Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.

• 대한화학회지
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• 제26권4호
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• pp.224-228
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• 1982

chl-b를 소중합체로서 용매에 녹였을 때 친핵성 n-prOH를 첨가함에 따라 흡광도와 fluorescence emission의 세기는 증가하였지만 단위체로 녹은 다음에 n-prOH의 농도증가에 따라 점차 감소하였다. chl-b는 소중합체의 생성때문에 Beer 법칙에 따르지 않았으며 용매의 극성변화에 따라 stockes shift를 나타냈다. 이러한 경향성은 chl-b의 정량에 고려하여야될 점이다.

• 한국세라믹학회지
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• 제49권1호
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• pp.105-110
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• 2012

In this paper, a yellow phosphor $Sr_3SiO_5:Eu^{2+}$ that emits efficiently at the 450 nm excitation for warm white LED is studied. In addition, the effects of various flux $BaF_2$, $NH_4Cl$ on the emission spectra were investigated. The samples were synthesized through conventional solid state reaction under reducing atmosphere of 95% $N_2$-5% $H_2$ mixture at the high temperature. All phosphors showed a excitation band from 450 nm and broad band emission peaking at region of 580 nm. The optimal concentration of $BaF_2$ flux is 3 wt% for $Sr_3SiO_5$ with doping 0.05mol Eu phosphors fired in a reductive atmosphere. The phosphor showed highest emission peaking at 582 nm.

• 한국표면공학회지
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• 제47권4호
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• pp.192-197
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• 2014

Red-emitting nitride phosphors recently attracted considerable attention because of their high thermal stability and high color rendering index properties. For excellent phosphor of white light-emitting-diode, ternary nitride phosphor of $Sr/SmSi_5N_8:Eu^{2+}$ with different $Eu^{2+}$ ion concentration were synthesized by solid state reaction method. In this work, red-emitting nitride $Sr/SmSi_5N_8:Eu^{2+}$ phosphor was successfully synthesized by using multi-step high frequency induction heat treatment. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Sr/SmSi_5N_8:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Sr/SmSi_5N_8:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 300 - 550 nm, namely from UV to visible area with distinct enhanced emission peaks. With an increase of $Eu^{2+}$ ion concentration, the peak position of emission in spectra was red-shifted from 613 to 671 nm. After via multi-step heat treatment, prepared phosphor showed excellent luminescence properties, such as high emission intensity and low thermal quenching, better than commercial phosphor of $Y_3Al_5O_{12}:Ce^{3+}$. Using $Eu_2O_3$ as a raw material for $Eu^{2+}$ dopant with nitrogen gas flowing instead of using commercial EuN chemical for $Sr/SmSi_5N_8:Eu^{2+}$ synthesis is one of characteristic of this work.

• Bulletin of the Korean Chemical Society
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• 제29권2호
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• pp.445-449
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• 2008

Micrometer-sized copper (mCu) powders are weakly surface-enhanced Raman scattering (SERS) active by the excitation at 632.8 nm, but nearly ineffective as a SERS substrate at 514.5 nm excitation. The SERS activity of mCu powders at both excitation wavelengths can be increased dramatically by a simple method of the galvanic exchange reaction with AgNO3 in aqueous medium. In this work, the SERS activity of the Ag-exchanged Cu powders (mCu@Ag) has been evaluated by taking a series of Raman spectra using benzenethiol (BT) as the probe molecule. It is clearly confirmed by field emission scanning electron microscopy and X-ray diffractometry that the SERS activity of mCu@Ag powders is, in fact, highly dependent on the extent of galvanic reaction.

• 한국재료학회지
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• 제18권3호
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• pp.159-162
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• 2008

$Eu^{3+}$-activated $R_3GaO_6$ (R = Y, Gd) phosphors were prepared in a conventional solid-state reaction and their optical properties were investigated. These compounds exhibit strong red emission under light excitation at 254 nm. The emission spectra are dominated by peaks appearing around 610-630 nm that are induced by the electric dipole transition of $^5D_0\;{\rightarrow}\;^7F_2$ of $Eu^{3+}$. In addition, the appropriate CIE (Commission Internationale de l'clairage) chromaticity coordinates, (x = 0.656, y = 0.336) for $Y_3GaO_6$ and (x = 0.655, y = 0.334) for $Gd_3GaO_6$, become closer to the NTSC (National Television System Committee) standard values. With the optimized activator concentrations, the maximum emission brightness is approximately 80% of $Y_2O_3$:$Eu^{3+}$ typical red-emitting phosphor with improved color purity under an excitation condition of 254 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.359-359
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• 2012

Trivalent rare-earth ($RE^{3+}=Eu^{3+}\;and\;Tb^{3+}$) ions activated $CaGd_4O_7$ phosphors were synthesized by a sol-gel process. After annealing at $1,500^{\circ}C$, the XRD patterns of the phosphor confirmed their monoclinic structure. The photoluminescence excitation spectra of $Eu^{3+}$ and $Tb^{3+}$ doped $CaGd_4O_7$ phosphor shows the broad-band excitations in the shorter wavelength region due to charge transfer band of completely filled $O^{2-}$ to the partially filled $Eu^{3+}$ ions and f-d transitions of $Tb^{3+}$ ions, respectively. The photoluminescence spectra show that the reddish-orange ions and green emission for $Eu^{3+}$ and $Tb^{3+}$ ions, respectively. Owing to the importance of thermal quenching property in the technological parameters, the temperature-dependent luminescence properties of these phosphors were measured for examing the suitability of their applications in the development of light emitting diodes (LEDs). In addition to those measurements, the cathodoluminescence properties were examined by changing the acceleration voltage and filament current. The calculated chromaticity coordinates of these phosphors were close proximity to those of commercially available phosphors for LED and field emission display devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1509-1512
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• 2008

Monomer and aggregate of $Bebq_2$ give fluorescence at 492 and 511 nm at 12 K, respectively. Intense T1 emission with vibronic structure was observed from $Bebq_2$ and $Alq_3$ below 70 K by heavily doping with phosphorescent $Ir(ppy)_3$. Energy transfer from $Ir(ppy)_3$ was clarified by photoluminescence excitation spectra.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.422-424
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.539-542
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).