• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.679-683
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• 2005

In this study, we investigate the characteristic of the poly-Si grain and morphology influenced by XeCl excimer laser system. The stable laser beam source is basic requested; the irradiation beam through optical lens module is more important which limit the grain size smaller than $0.5{\mu}m$. The homogenization lens designs control the poly-Si grain size; so we hardly get enlarge grain size by one laser irradiation scan.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.471-472
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• 2012

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.332-335
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• 2002

Surface treatment was carried out by an Excimer Pulse laser beam in order to increase the adhesive strength of vulcanized rubber. With increasing number of laser beam irradiations, the adhesive strength was greatly increased; the adhesive strength was 1,500 N/m after irradiation 100 times. The energy density increase was in direct proportion to the adhesive strength increase; the maximum value of the adhesive strength was 1,500 N/m at the energy density of 176 mJ/$cm^{2}$. It was concluded that the increase of surface area was relevant to that of both energy density and adhesive strength

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1857-1860
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• 2003

The ablative decomposition mechanism of PMMA(polymethyt methacrylate), PET(polyethylene terephthalate) and PC(polycarbonate) with KrF excimer laser(λ: 248nm, pulse duration: 5ns) is investigated. The UV/Vis spectrometer analysis showed that PMMA is a weak absorber and PET, PC are a strong absorber at the wavelength of 248nm. The results(surface debris, melt, etch depth, etching shape) from drilling and direct writing experiments imply that ablation mechanism of PMMA is dominated by photothermal process, while that of PET, PC are dominated by photochemical process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.1076-1079
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• 1997

A new 3D micromachining method, called Hole Area Modulation(HAM), has been introduced and experimentally confirmed its feasibility. In this method, information on the depth of machining is converted to the sizes of small holes in the mask. The machining is carried out with a simple 2D movement of the workpiece. This method can be applied for machining various kinds of microcavities in various materials. In this paper, a mathematical model for excimer laser micromachining based on HAM and also determination of the optimal laser ablation conditions(width, Hole radius, step size, path, etc.) is completed by employing using Genetic Algorithm(GA).

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.6
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• pp.17-23
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• 2002

A new 3D micromachining method called Hole Area Modulation(HAM), has been introduced to enhance the current micromachining technology. In this method, information on the depth of machining is converted to the sizes of small holes in the mask. The machining is carried out with a simple 2D movement of the workpiece. This method can be applied for machining various kinds of microcavities in various materials. In this paper, a machematical model for excimer laser micromachining based on HAM and also determination of optimal laser ablation conditions(width hole radius, step size, path, etc.) is performed by Genetic Algorithm(GA).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.430-431
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• 2006

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.29-33
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• 2004

In this paper, we investigated the ultra-low temperature(<$150^{\circ}C$) polycrystalline silicon film on plastic substrate application using RF-magnetron sputtering and excimer laser annealing. Amorphous silicon films were deposited using Ar/He mixture gas at $120^{\circ}C$ and in-film argon concentration was less than 2%, which was measured to Rutherford Backscattering Spectrometry. At energy density 320mJ/$\textrm{cm}^2$, RMS roughness was 267$\AA$ and UV crystallinity was 62%. The grain size varies from 50nm to 100nm after excimer laser irradiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.11-15
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• 2006

In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.