• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.147.1-147.1
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• 2016

Hydrophobic thin films are variously applicable for encapsulation of organic devices and water repulsive glass, etc. In this work, the stability of hydrophobic characteristics of plasma polymerized tetrakis (trimethylsilyloxy) silane (ppTTMSS) thin films were investigated. The films were deposited with plasma enhanced chemical vapor deposition (PECVD) on the glass. The deposition plasma power and deposition pressure was 70 W and 600 mTorr, respectively. Thereafter, deposited films were treated by 248nm KrF excimer laser. Stability of hydrophobic properties of plasma polymerized tetrakis(trimethylsilyloxy)silane film surface was tested by excimer laser irradiation, which is thought to simulate severe outdoor conditions. Excimer laser irradiation cycles changed from 10 to 200 cycles. The chemical structure and hydrophobicity of ppTTMSS films were analyzed by using Fourier transform infrared (FTIR) spectroscopy and water contact angle (WCA) measurement, respectively. Absorption spectra peaks and WCA of excimer laser treated ppTTMSS films did not change notably. These results show that our ppTTMSS films possess stable hydrophobic properties.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.20-24
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• 2000

This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1061-1064
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• 2007

Thin Beam Excimer Laser Annealing is investigated as one possible process enabled by the variable concept of Thin Beam LTPS processing. The structure of the resulting p-Si material is analyzed in terms of grain size distribution, scaling with energy density and overlap, as well as average surface roughness. This process provides similar control and latitude as conventional excimer laser annealing, but reduced average surface roughness and the potential to be scaled to significant productivity levels.

• Laser Solutions
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• v.6 no.1
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• pp.33-40
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• 2003

The ablative decomposition mechanism of PMMA(polymethyl methacrylate) and PET(polyethylene terephthalate) with KrF excimer laser(λ : 248nm, pulse duration: 5㎱) is investigated. The UV/Vis spectrometer analysis showed that PMMA is a weak absorber and PET is a strong absorber at the wavelength of 248nm. The results(surface debris, melt, etch depth, etching shape) from drilling and direct writing experiments imply that ablation mechanism of PMMA is dominated by photothermal process, while that of PET is dominated by photochemical process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.66-66
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• 2001

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.26-26
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• 1996

• Laser Solutions
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• v.6 no.2
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• pp.9-17
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1058-1062
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• 1997

Development of laser induced chemical etching technologt with KrF laser are carried out in this study for micromachining of silicon wafer. The paper is devoted to experimental identification of excimer laser induced mechanism of silicon under chlorine pressures(0.02~500torr). Experimental results on pulsed KrF excimer laser etching of silicon in chorine atmosphere are presented. Etching rate dependency on laser fluence and chlorine pressure are discussed on the basis of experimental analysis, it is concluded that accurate digital micro machining process of silicon wafer can achieved by KrF laser induced chemical etching technology.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.324-326
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• 2004

We have obtained ultra-short pulses with a wavelength of 616 nm from a Distributed Feedback Dye Laser pumped by excimer laser. Using the second harmonic generation, we obtained ultra-short pulse at 308nm in ultraviolet region and also performed amplification in 3 stages of XeCl amplifiers.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.36-38
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• 1989

We have developed Magnetic Pulse Compression System to realize repetitive excimer laser excitation. The principle of this system is to use the large change in permiability owing to the nolinear characteristics of ferro-magnetic material (Metglas2605s-2 metal ribon). Prior to the laser operation, the MPC system was tested with a dummy load (5$\Omega$) and laser head. Laser head has a discharge volume of 1.0 (w) x 2.0 (h) x 20.0(1) cm. This MPC system compressed a 6.2us (FWHM), 80 A pulse into a 0.4us(FWHM), 1.3kA pulse.