• 한국세라믹학회지
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• 제20권4호
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• pp.324-332
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• 1983

In this studies resistivity thermal expansion and microstructure of the Forsterite Porcelain as a high frequency insulator were investigated. The body containing Zn-glass shows higher resistivity than any other body. The bodies containing K, Ba, Cd-glass respectively consist of fine crystals of mosaic type. The bodies containing Bi, Zn, Zr-glass repectively included more large crystals because of the grain growth and coherence of fine particles In the 4 series Forsterite containing excess MgO 0-6% the thermal coefficients of the bodies increased with the increasing of excess MgO and the bodies have conspicuously high thermal expansion coefficients when 15% excess $BaCO_3$ was added to. The resistivities of additive bodies of $BaCO_3$ 0, 5, 10% in Forsterite containg excess MgO 2% are higher than any other that of composition. Bacause the growing of Forsterite crystals was restrained with the increasing of excess MgO $BaCO_3$ their grain size became fine and their grain boundaries were decomposed and also the glass phase having high refractive inder was increased. The higher the firing temperature increased the more the process of crystal growing was progressed.

• 한국세라믹학회지
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• 제54권4호
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• pp.323-330
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• 2017

To understand the defect chemistry of multiferroic $BiFeO_3-based$ systems, we synthesized nonstoichiometric $Bi_{1+x}FeO_{3{\pm}{\delta}}$ ceramics by conventional solid-state reaction method and studied their structural, dielectric and high-temperature charge transport properties. Incorporation of an excess amount of $Bi_2O_3$ lowered the Bi deficiency in $BiFeO_3$. Polarization versus electric field (P-E) hysteresis loop and dielectric properties were found to be improved by the $Bi_2O_3$ addition. To better understand the defect effects on the multiferroic properties, the high temperature equilibrium electrical conductivity was measured under various oxygen partial pressures ($pO_2{^{\prime}}s$). The charge transport behavior was also examined through thermopower measurement. It was found that the oxygen vacancies contribute to high ionic conduction, showing $pO_2$ independency, and the electronic carrier is electron (n-type) in air and Ar gas atmospheres.

• 한국재료학회지
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• 제12권12호
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.254-258
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• 2000

Current leads of high $T_{c}$ superconductor were fabricated with Bi excess B $i_{2.2}$/S $r_{1.8}$/C $a_{1}$/C $u_{2}$/ $O_{x}$ composition by rapid cooling method. The dimensions of final samples were fixed 3 mm and 8 mm diameter with 50 mm length each To control uniform density the samples were preformed by CIP(Cold Isostatic Press) process and followed by partial or full melting process after raising up to 90$0^{\circ}C$ for 30min. Plate shaped microstructure was clearly observed adjacent to the Ag tube wall and the size of plate was about 100$\mu$m. However the severe destruction of growth orientation was shown in the inner growth part. critical temperature ( $T_{c}$) was about 53~71K after directional growth while Tc was decreased about 77~80 K before directional growth. After directional growth critical current( $I_{c}$) and critical current density( $J_{c}$) in the specimen of 8 mm diameter at 50 K were about 110 A and 280 A/c $m^2$ respectively.pectively.ely.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.803-808
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• 2014

$Bi_{0.5+x}(Na_{0.78}K_{0.22})_{0.5-3x}TiO_3$ ceramics with an excess $Bi^{3+}$ and a deficiency of $Na^+$ and $K^+$ were synthesized by a conventional solid state reaction method. The structure and morphology of $Bi_{0.5+x}(Na_{0.78}K_{0.22})_{0.5-3x}TiO_3$ ceramics were characterized by X-ray diffraction and field emission scanning electron microscopy. The electric polarization and mechanical strain induced by external electric field, and the temperature dependence of dielectric constant were investigated. These results demonstrated that an ergodic relaxor phase can be induced by controls of the mole ratio of $Bi^{3+}$, $Na^+$ and $K^+$. A phase boundary between non-ergodic and ergodic relaxor phases can be observed at ambient temperature. The ergodic relaxor phase can be transferred to the ferroelectric phase by application of the electric field. The stability of the induced ferroelectric phases strongly depends on the mole ratio of $Bi^{3+}$, $Na^+$ and $K^+$. The maximum strain of 0.31% was observed in $Bi_{0.51}(Na_{0.78}K_{0.22})_{0.47}TiO_3$ ceramics sintered at $1,150^{\circ}C$ for 2 h.

• 한국재료학회지
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• 제8권5호
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• pp.408-412
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• 1998

Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$(0.05$\leq$x$\leq$0.25)합금분말을 기계적 합금화 공정으로 제조하여 가압소결 후, $Bi_{2}$Se$_{3}$함량에 따른 열전특성의 변화거동을 분석하였다. 기계적 합금화로 제조한 $ Bi_{2}$(Te$_{1-x}$ $Se_{x}$$_{3}$ 가압소결체는 단결정과는 달리 donor dopant의 첨가없이도 n형 전도를 나타내었다. $Bi_2(Te_{0.85}Se_{0.15})_3$ 합금분말을 (50%H$_{2}$+50% Ar)분위기 중에서 환원처리하여 가압소결시, 분말 효면의 산화층 제거와 과잉 Te 공격자의 소멸에 기인한 전자 농도의 감소로 p형으로 천이되었다. 기계적 합금화로 제조한 $ Bi_{2}$($Te_{1-x}$ $Se_{x}$$_{3}$가압소결체는 x=0.15조성에서 $1.92{\times}10^{-3}$ K의 최대 성능지수를 나타내었다.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.270-273
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• 2012

x mol% (x = 0 ~ 20) Na2CO3 excess Bi2.5Na3.5Nb5O18 (BNN) particles were synthesized using molten salt as a flux. The secondary phases were observed at stoichiometric ratio of BNN precursors and their intensity decreased with increasing Na contents. The results of SEM images showed that all particles existed in a platelet shape and the particle increased in size with higher increasing Na contents. Plate-like NaNbO3 particles were developed using BNN precursor obtained by a topochemical microcrystal conversion. XRD analysis of NaNbO3 particles showed that a single perovskite phase and the intensity of (h00) peaks increased with increasing Na contents in BNN precursor. SEM images showed that the size of plate-like NaNbO3 was significantly changed by controlling Na contents in BNN precursors.

• 한국재료학회지
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• 제10권3호
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• pp.246-252
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• 2000

기계적 합금화 공정을 이용하여 제조한 $Bi_2(Te_{0.85}Se_{0.15})_3$ 가압소결체의 가압소결온도에 따른 열전특성을 분석하였다. $Bi_2(Te_{0.85}Se_{0.15})_3$ 가압소결체는 $300^{\circ}C$에서 $550^{\circ}C$ 범위의 가압소결온도에 무관하게 n형 전도를 나타내었다. $Bi_2(Te_{0.85}Se_{0.15})$ 합금분말을 (50% $H_2+50%$ Ar) 분위기에서 환원처리시, 분말 표면의 산화층 제거 및 과잉 Te 공격자의 소멸에 기인한 전자 농도의 감소로 가압소결체의 Seebeck 계수가 양의 값으로 변화하였다. $450^{\circ}C$ 이상의 온도에서 가압소결시 가압소결온도의 증가에 따라 $Bi_2(Te_{0.85}Se_{0.15})$ 합금의 성능지수가 증가하였으며, $550^{\circ}C$에서 가압소결시 $1.92{\times}10^{-3}/K$의 최대성능지수를 얻을 수 있었다.

• 한국산학기술학회논문지
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• 제12권1호
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• pp.537-544
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• 2011

본 연구에서는 탄화수소가스 중에서 가장 발화온도가 높은 메탄을 대상으로 전이금속 촉매의 산화반응 특성을 수행하였다. 망간의 경우 MnO, $MnO_2$, $Mn_2O_3$, $Mn_3O_4$, $Mn_4O_5$와 같이 다양한 산화가를 나타내므로 산화망간을 선택하여 메탄산화반응실험을 실시하였다. 메탄의 산화를 위한 전이금속 촉매중 망간을 산화물형태로 $Al_2O_3$, $TiO_2$에 담지하였으며, 조촉매로는 Ni, Co 등을 이용하여 활성능과 수명의 향상을 연구하였다. 본 연구에서 촉매 제조는 과잉용액 함침법을 사용하였다. 촉매의 활성화에너지, $T_{50}$, $T_{90}$을 계산하기 위하여 온도와 공간속도에 대한 전환율을 측정하였다. Mn-Co, Mn-Ni의 두성분의 전이금속촉매의 수명이 망간촉매에 비하여 10%이상 증가하고 활성은 약간 감소함을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제8권4호
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• pp.153-156
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• 2007

Structural and electrical properties of the fully crystallized-bismuth magnesium niobate ($Bi_2Mg_{2/3}Nb_{4/3}O_7$, BMN) films with 15 mol% excess bismuth deposited on Pt bottom electrode by pulsed laser deposition are characterized for various deposition temperatures. The BMN films were crystallized with a monoclinic structure from $300^{\circ}C$ and the surface roughness slightly decreases with increasing deposition temperature. The capacitance density of the films increases with increasing deposition temperature and especially, films deposited at $400^{\circ}C$ exhibit a capacitance density of approximately $620nF/cm^2$. The crystallized BMN films with approximately 170 nm thickness exhibit breakdown strength above 600 kV/cm (${\leq}10V$) irrespective of deposition temperature and a leakage current density of approximately $2{\times}10^{-8}A/cm^2$ at 590kV/cm (at 10 V).