• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2477-2480
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• 2007

MgAl2O4:Eu3+ red-light emitting powder phosphor was prepared at temperature as low as 500 oC within a few minutes by using the combustion route. The prepared powder was characterized by X-ray diffraction, scanning electron microscopy and Fourier-transform infrared spectrometry. The luminescence of Eu3+-activated MgAl2O4 shows a strong red emission dominant peak around 611 nm, which can be attributed to the 5D0-7F2 transition of Eu3+ ions from the synthesized phosphor particles under excitation (394 nm). Electron paramagnetic resonance (EPR) measurements at the X-band showed that no signal could be attributed to Eu2+ ions in MgAl2O4.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.332-337
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• 2002

The applicability of models based on fractal geometry to characterize the surface of the EL devices was investigated. Insulating layer and phosphor layer of EL devices were deposited on ITO glass using e-beam method. The images of phosphor layer by scanning electron microscope(SEM) were transformed to binary coded data. The relations between fractal geometry and electrical characteristics of EL devices were investigated. When the fractal dimension of $Cas:EuF_3$ EL device was 1.82 and its grain boundary area was 19%, the brightness of $Cas:EuF_3$ EL device was 261 cd/$\textrm{m}^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.257-259
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• 2002

As a new host material for a red phosphor for PDP applications, has studied (Y,Gd)$Al_3(BO_3)_4$ which gives non-centrosymmetric sites for $Eu^{3+}$ activators. Vacuum ultraviolet (VUV) excitation spectrum of new red phosphor (Y,Gd)$Al_3(BO_3)_4$:$Eu^{3+}$ has two broad bands. One band with the absorption edge at ca. 168 nm is the band-gap absorption of aluminoborate and the other broad band centered 240 nm is the charge transfer transition between $Eu^{3+}$ and the neighboring oxygen anions. The PL spectrum shows the strongest emission at 617 nm due to the electric dipole $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$, whose luminescent chromaticity is (0.67, 0.33).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.173-173
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• 2013

최근에 고효율의 형광체를 개발하고자 무기물 모체에 주입된 희토류 이온의 발광에 대한 연구가 급부상하고 있다. 형광체는 고휘도, 넓은 시청 각도와 저 비용으로 인하여 대형 평판 디스플레이 분야로 그 응용성을 확장하는 플라즈마 디스플레이 패널 제작에 있어서 매우 중요한 물질이다. 현재 적색 형광체로 널리 사용되고 있는 발광 물질은 YBO3:Eu3+ 혹은 (Y,Gd)BO3:Eu3+ 형광체이지만, Eu3+ 이온이 중심대칭의 자리에 위치하기 때문에, Eu3+ 이온의 5D07F1 전이에 의한 주황색의 발광 세기가 5D07F2 전이에 의한 적색의 세기보다 강하여 고품질의 색상을 구현하는데 상당한 어려움이 있다. 이러한 문제점을 해결하기 위하여 새로운 모체 격자를 갖는 적색, 녹색, 청색 형광체 개발에 많은 노력이 집중되고 있다. 본 연구에서는 형광체 합성시 중요한 변수의 하나인 소결 온도가 새로운 다양한 색을 방출하는 형광체 분말 CaSiO4:RE3+ (RE=Eu, Sm, Tb, Dy, Ce)의 특성에 미치는 영향을 조사하였다. CaSiO4:RE3+ (RE=Eu, Sm, Tb, Dy, Ce) 형광체 분말 시료는 초기 물질 CaO (99.99%), SiO2 (99.99%), Eu2O3 (99.99%), Sm2O3 (99.9%), Tb4O7 (99.9%), Dy2O3 (99.9%), CeO2 (99.9%)을 화학적량으로 준비하였다. 볼밀, 건조 작업을 한 후에, 시료를 막자사발에 넣고 분쇄하여 3시간의 하소 공정과 5시간의 소결 공정을 수행하였다. 이때 소결 온도를 변수로 선택하여 각각 $800^{\circ}C$, $900^{\circ}C$, $1,000^{\circ}C$, $1,100^{\circ}C$에서 소결 작업을 수행하여 합성 분말의 구조, 표면, 광학적 특성을 측정하여 소결 온도가 미치는 영향을 조사하였다. Eu3+가 도핑된 CaSiO4 형광체 분말의 경우에, 발광 스펙트럼은 597, 618, 655, 707 nm에서 관측되었으며, 소결 온도가 $800^{\circ}C$에서 $1,100^{\circ}C$로 증가함에 따라 모든 발광 스펙트럼의 세기는 순차적으로 증가함을 나타내었다. Tb3+가 도핑된 CaSiO4 형광체 분말의 경우에 관측된 발광 스펙트럼은 주 피크인 549 nm를 중심으로 하여 세기가 상대적으로 작은 493, 592, 626 nm의 피크들이 관측되었으며, 소결 온도가 증가함에 따라 전반적으로 발광 세기들이 증가하는 경향을 나타내었다. Sm3+가 도핑된 CaSiO4 형광체의 경우에, 발광 스펙트럼은 전형적인 Sm3+이온에 의한 전이 신호들이 605, 570, 653 nm에서 나타났다. 발광 스펙트럼의 세기는 소결 온도에 비례하여 증가하였다. Ce3+가 도핑된 경우에 발광 스펙트럼은 소결 온도에 관계없이 401 nm에서 관측되었으며, 소결 온도에 따라 발광 세기의 변화가 나타났다. 이 실험 결과로 부터, 합성시 적절한 소결 온도의 선택이 고발광 효율의 형광체를 제작하는데 있어서 매우 중요한 요소가 됨을 확인할 수 있었다.

• Journal of the Korean Solar Energy Society
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• v.22 no.4
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• pp.44-50
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• 2002

Photosynthesis of plants is effective in the range of 550 to 700 nm of the wavelength of solar irradiation. If the conversion of ultraviolet to the above mentioned region is possible, the photosynthesizing ability is expected to be enhanced. $Eu^{3+}$ doped soda-lime bulk and $TiO_2-SiO_2$ sol-gel coated glasses were prepared and their spectroscopic properties were studied. The absorption and emission spectra for the specimens were measured with the changes of wavelength and Eu ion concentration in the range of the wavelength of 300 to 700nm. The transmittance intensity of visible light through the bulk glass and the coated one was unchanged with the addition of Eu element. The emission spectrum intensity of $Eu^{3+}$ was found to be the maximum at 618 nm which is a transition of $^5DO{\rightarrow}^7F_2$. Additionally, it was shown that the intensity was linearly increased up to 10% of the Eu concentration.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.206-211
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• 2017

$BiNbO_4:RE^{3+}$ (RE = Dy, Eu, Sm, Tb) phosphors were prepared by solid-state reaction at $1100^{\circ}C$ and their structural, photoluminescent, and morphological properties were investigated. XRD patterns exhibited that all the synthesized phosphors exhibited a triclinic system with a dominant (210) diffraction peak, irrespective of the type of activator ions. The surface morphologies of rare-earth-ion-doped $BiNbO_4$ phosphors were found to depend strongly on the type of activator ions. The $Eu^{3+}$ and $Dy^{3+}$ doped $BiNbO_4$ phosphors revealed a strong red (613 nm) emission resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ and a dominant yellow (575 nm) emission originating from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ respectively, which were the electric dipole transitions, indicating that the activator ions occupy sites of non-inversion symmetry in the $BiNbO_4$ phosphor. The main reddish-orange emission spectra of $Sm^{3+}$-doped $BiNbO_4$ phosphors were due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ (607 nm) magnetic dipole transition, indicating that the $Sm^{3+}$ ions were located at inversion symmetry sites in the $BiNbO_4$ host lattice. As for $Tb^{3+}$-doped phosphors, green emission was obtained under excitation at 353 nm and its CIE chromaticity coordinates were (0.274, 0.376). These results suggest that multicolor emission can be achieved by changing the type of activator ions incorporated into the $BiNbO_4$ host crystal.

• Applied Science and Convergence Technology
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• v.26 no.2
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• pp.26-29
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• 2017

Thin films of europium-doped yttrium oxide ($Y_2O_3$:Eu) were prepared on Si (100) substrates by using a radio frequency (RF) magnetron sputtering. After the deposition, the films were annealed at $1000^{\circ}C$ in an air ambient for 1 hour. X-ray diffraction analysis revealed that the $Y_2O_3$:Eu films had a polycrystalline cubic ${\alpha}-Y_2O_3$ structure. The as-deposited films showed no photoluminescence (PL), which was due to poor crystalline quality of the films. The crystallinity of the $Y_2O_3$:Eu films was significantly improved by annealing. The strong red PL emission was observed from the annealed $Y_2O_3$:Eu films and the highest intensity peak was centered at around 613 nm. This emission peak originated from the $^5D_0{\rightarrow}^7F_2$ transition of the trivalent Eu ions occupying the $C_2$ sites in the cubic ${\alpha}-Y_2O_3$ lattice. The broad PL excitation band was observed at wavelengths below 280 nm, which was attributed to the charge transfer transition of the trivalent Eu ion.

• 전기의세계
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• v.38 no.10
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• pp.13-22
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• 1989

본 연구에서는 EL에 사용되고 있는 분말형광체에 대한 물리적 제현상을 소개하고 아울러 본 연구실에서 연구해 온 ZnS : Mn, Zns : TbF$_{3}$, Zns : SmF$_{3}$, CaS : EuCl$_{3}$, SrS: CeCl$_{3}$ 형광체 및 박막EL 소자에 관한 실험과 내용을 바탕으로 형광체의 특성을 종합 분석하고 현상을 고찰, 검토하고자 한다.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.252-257
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• 2004

$Y_{2}O_{3}:Eu^{3+}$ thin films have been grown on $Al_{2}O_{3}$(0001) substrates by a pulsed laser deposition (PLD) method. The phosphor thin films were deposited at a substrate temperature of 500, 600, and $700^{\circ}C$ under the oxygen pressure of 100, 200, and 300 mTorr. The crystallinity, surface roughness and photoluminescence of the films are highly dependent on the substrate temperature and oxygen pressure. The films grown on $Al_{2}O_{3}$(0001) substrate even under the different substrate temperatures and oxygen pressures exhibited (222) preferred orientation. The luminescent spectra exhibited strong luminescence of ${^{5}D_{0}}-{^{7}F_{2}}$ transition within $Eu^{+3}$ peaking at 612 nm. The crystallinity and luminescence intensity of the films have been improved as the substrate temperature increasing. With increase of oxygen pressure from 50 to 300 mTorr, the crystallinity of the films has been uniformly decreased. The photoluminescence intensity and surface roughness have similar behaviors as a function of oxygen pressure. At 200 mTorr, both photoluminescence intensity and surface roughness show a maximum.