• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.28-28
• /
• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.34 no.12
• /
• pp.1857-1863
• /
• 2010

We present the fabrication and characterization of transparent carbon nanotube film (CNF) piezoresistors. CNFs were fabricated by vacuum filtration methods with 65?92% transmittance and patterned on Au-deposited silicon wafer by photolithography and dry etching. The patterned CNFs were transferred onto poly-dimethysiloxane (PDMS) using the weak adhesion property between the silicon wafer and the Au layer. The transferred CNFs were confirmed to be piezoresistors using the equation of concentrated-force-derived resistance change. The gauge factor of the CNFs was measured to range from 10 to 20 as the resistance of the CNFs increased with applied pressure. In polymer microelectromechanical systems, CNF piezoresistors are the promising materials because of their high sensitivity and low-temperature process.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.28 no.5
• /
• pp.421-426
• /
• 2008

The magnetic bio-sensor used the PHR (planar hall resistance) effect generated by the free layer in spin-valve giant magnetoresistance structure of Ta/NiFe/CoFe/Cu/NiFe/IrMn/Ta. The PHR element with micrometer size was fabricated through the photolithograph and dry etching process. The PHR signal with magnetic field was measured under the conditions of with and without single magnetic bead. A single magnetic bead of diameter $2.8\;{\mu}m$ was successfully detected using the PHR sensor. Therefore, the high resolution PHR sensor can be applied to bio-sensor application utilizing the output voltage variation of the PHR signals in the presence and absence of a single magnetic bead.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.8
• /
• pp.45-51
• /
• 2007

We designed and fabricated the planar graded-gap injector GaAs Gm diodes with $1.6{\mu}m$ active length for operation at 94 GHz. The fabrication of the Gunn diode is based on MESA etching, Ohmic metalization, and overlay metalization. The measured negative resistance characteristics of the graded-gap injector GaAs Gunn diodes are examined for two different device structures changing the distance between the cathode and the anode electrodes. Also, we discuss the DC results under the forward and the reverse biases concerning the role of the graded-gap injector. It is shown that the structure having the shorter distance between the cathode and the anode electrode has higher peak current, higher breakdown voltage, and lower threshold voltage than those of the larger distance.

• The Journal of Korean Academy of Prosthodontics
• /
• v.46 no.3
• /
• pp.298-306
• /
• 2008

STATEMENT OF PROBLEM: Effect of surface treatment of ceramic under loading does not appear to have been investigated. PURPOSE: The aim of this study was to investigate the effect of surface treatment of esthetic ceramic, which is performed to increase the bonding strength, on the fracture stress under controlled cyclic loading condition. MATERIAL AND METHODS: Sixty 1.0 mm-thick specimens were made from Mark II Vitablocs (Vita Zahnfabrik, Germany) and divided into 3 groups: polished (control), sandblasted, and etched. Specimens of each group were bonded to a dentin analog material base including micro-channels to facilitate the flow of water to the bonding interface. Bonded ceramics were cyclically loaded with a flat-end piston in the water (500,000 cycles, 15Hz). Following completion of cyclic loading, specimens were examined for subsurface crack formation and subsequent stress was determined and loaded to next specimen by the staircase method according to the crack existence. RESULTS: There were significant differences of mean fatigue limit in the sandblasted (222.86 ${\pm}$ 23.42 N) and etched group (222.86 ${\pm}$ 14.16 N) when compared to polished group (251.43 ${\pm}$ 10.6 N) (P<.05; Wald-type pair-wise comparison and post hoc Bonferroni test). Of cracked specimens, surface treated group showed longer crack propagation after 24 hours. All failures originated from the radial cracking without cone crack. Fracture resistance of this study was very low and comparable to failure load in the oral cavity. CONCLUSION: Well controlled cyclic loading could induce clinically relevant cracks and fracture resistance of Mark II ceramic was relatively low applicable only to anterior restorations. Surface treatment of inner surface of feldspathic porcelain in the matsicatory area could influence lifetime of restorations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.7-7
• /
• 2009

Lead telluride (PbTe) is a very promising thermoelectric material due to its narrow band gap (0.31 eV at 300 K), face-centered cubic structure and large average excitonic Bohr radius (46 nm) allowing for strong quantum confinement within a large range of size. In this work, we present the thermoelectric properties of individual single-crystalline PbTe nanowires grown by a vapor transport method. A combination of electron beam lithography and a lift-off process was utilized to fabricate inner micron-scaled Cr (5 nm)/Au (130 nm) electrodes of Rn (resistance of a near electrode), Rf (resistance of a far electrode) and a microheater connecting a PbTe nanowire on the grid of points. A plasma etching system was used to remove an oxide layer from the outer surface of the nanowires before the deposition of inner electrodes. The carrier concentration of the nanowire was estimated to be as high as $3.5{\times}10^{19}\;cm^{-3}$. The Seebeck coefficient of an individual PbTe nanowire with a radius of 68 nm was measured to be $S=-72{\mu}V/K$ at room temperature, which is about three times that of bulk PbTe at the same carrier concentration. Our results suggest that PbTe nanowires can be used for high-efficiency thermoelectric devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.729-734
• /
• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Corrosion Science and Technology
• /
• v.2 no.3
• /
• pp.117-126
• /
• 2003

Due to excellent corrosion resistance and mechanical properties, austenitic stainless steel is widely used as the material for chemical plants. nuclear power plants, and food processing facilities. But, the zone affected by heat in the range of 400 to $800^{\circ}C$ during welding loses corrosion resistance and tensile strength since Cr-carbide precipitation like $Cr_{23}C_6$ forms at the grain boundary and thereby takes place the intergranular corrosion. In this study, AISI 304 stainless steel with the added Nb of 0.3 to 0.7 wt% was solutionized at $1050^{\circ}C$ and sensitized at $650^{\circ}C$. Specimen was welded by MIG. The phase and the microstructure of the specimens were examined by an optical microscope, a scanning electron microscope, and a x-ray diffractometer. The corrosion characteristics of specimens were tested by electrolytic etching and by double loop electrochemical potentiokinetic reactivation method(EPR) in the mixed solution of 0.5M $H_2SO_4$ + 0.01M KSCN. The melting zone had dendritic structure constituted of austenitic phase and $\delta$-ferrite phase. Cr carbide at the matrix did not appear, as Nb content increased. At the grain boundaries of the heat affected zone, the precipitates decreased and the twins appeared. The hardness increased, as Nb content increased. The hardness was highest in the order of the heat affected zone>melted zone>matrix. According to EPR curve, as the Nb content decreased, the reactivation current density(Ir) and the activation current density(la) were highest in the order of the melted zone

• 한국태양에너지학회:학술대회논문집
• /
• 2011.11a
• /
• pp.51-55
• /
• 2011

In this paper, the optimized doping condition of crystalline silicon solar cells with 156 ${\times}$ 156 mm2 area was studied. To optimize the drive-in condition in the doping process, the other conditions except drive-in temperature and time were fixed. After etching 7 ${\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80 nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in $400-425-450-550-850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $828^{\circ}C$ to $860^{\circ}C$ and time was from 3 min to 40 min. The sheet resistance of wafer was fixed to avoid its effect on solar cell. The solar cell fabricated with various conditions showed the similar conversion efficiency of 17.4%. This experimental result showed the drive-in temperatures and times little influence on solar cell characteristics.

• Journal of the Korean Magnetics Society
• /
• v.16 no.1
• /
• pp.75-78
• /
• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.