• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.123-126
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• 2002

Samples of Nb/Al-Al$O_{x}$/Nb tunnel junction with the size of 50$\mu$m $\times$ 50$\mu$m were fabricated by employing self-aligning and reactive ion etching technique. In the samples with high-quality, $V_{m}$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density $J_{c}$ = 500 A/$cm^{2}$ and $V_{g}$ value (the gap voltage) was 2.8 mV. In the higher $J_{c}$, voltage fluctuation in the current rising at the gap voltage was observed. The $V_{m}$ and $J_{c}$ value were 8 mV and 900 A/$cm^{2}$, respectively.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.96-99
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• 2000

In order to improve the rate capability of lithium manganese oxide thin film, we prepared the patterned cathode films by conventional lithography and etching techniques. From the investigation of discharge current density effects on discharge curves of cathode films, the rate capability was greatly improved due to increase of lithium intercalation kinetics fur charge transfer.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.176-176
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• 2006

We designed and synthesized new type of nonchemically amplified polymeric and molecular resists and studied their lithographic performance. The polymeric resists [poly(DOBEMA-co-GBLMA)] show very high degree of photobleaching at 248 nm and moderate to good degree of photobleaching at 193 nm. The molecular resist (CDEOPE-POSS) shows high degree of photobleaching at 248 nm and modetate degree of photobleaching at 193 nm. CDEOPE-POSS possesses very high oxygen reactive ion etching resistance, which makes it suitable to be used as a bilayer resist. The lithographic studies of these resist materials suggest the feasibility of these materials to be used as single and bilayer resists.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1498-1499
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• 1998

Thin film inductors of 10 mm ${\times}$ 10 mm with spiral pattern of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their impedence characteristics and annealing after effects were investigated. After magnetic annealing, the impedence characteristics of the inductors were improved at comparatively low frequencies, but the tendencies of it for thr frequency changes were almost same. These improvement was caused by the annihilation of the internal stresses of films, Uniaxial field annealed thin film inductor had an inductance of 1000 nH, resistance of 6 $\Omega$, and quality factor of 1 at 2 MHz.

• Journal of the Korean Society for Nondestructive Testing
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• v.9 no.2
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• pp.50-60
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• 1989

The control of resistance of foil strain gauge is accomplished by means of etching technique. Thus, there is an irregularity in metal foil. In order to solve this problem, ion sputter machining method has been used to make strain gauge in this study and the characteristics of this strain gauge are investigated. As the result of this study, it was possible to make a flexible strain gauge which can be used to measure the stress. The strain gauge made by authors shows superior characteristics in creep, O point variance, hysteresis and nonlinearity by surrounding temperature.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.197-203
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• 1999

Stainless steels in general has passive film having strong corrosion resistance on surface. Therefore it must be necessarily removed by etching in mixing solution of sulfuric and chloric acid before Nitriding treatment. But in the ion nitriding, nitride layer was easily formed because passive film was removed without difficult by sputtering effect. The removal extent of these passive films was greatly effected by gas mixing ratios and pressure and holding times of pre sputtering factors in pre sputtering stage. As a results of experiment it has been known that pre sputtering pressure and holding time was not nearly effective on the formation behavior of nitride layer. But when A/H2 gas mixing ratios was 1/2 (vol%) was the most effective of the all pre sputtering conditions. It was resulted from the combination of mechanical reaction byArgon bombardment and chemical reaction by reduction of hydrogen on the passive film.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.65-69
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• 2017

This paper presents a Technology-CAD (TCAD) simulation of the characteristics of crystalline Si pillar array solar cells. The junction depth and the surface concentration of the solar cells were optimized to obtain the targeted sheet resistance of the emitter region. The diffusion model was determined by calibrating the emitter doping profile of the microscale silicon pillars. The dimension parameters determining the pillar shape, such as width, height, and spacing were varied within a simulation window from ${\sim}2{\mu}m$ to $5{\mu}m$. The simulation showed that increasing pillar width (or diameter) and spacing resulted in the decrease of current density due to surface area loss, light trapping loss, and high reflectance. Although increasing pillar height might improve the chances of light trapping, the recombination loss due to the increase in the carrier's transfer length canceled out the positive effect to the photo-generation component of the current. The silicon pillars were experimentally formed by photoresist patterning and electroless etching. The laboratory results of a fabricated Si pillar solar cell showed the efficiency and the fill factor to be close to the simulation results.

• Journal of Adhesion and Interface
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• v.6 no.4
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• pp.7-11
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• 2005

Multi-walled carbon nanotubes (CNTs), which were purified by etching in 25% $H_2SO_4/HNO_3$ solution at $60^{\circ}C$ for 2 h, were modified via plasma polymerization coating of acrylic acid, allylamine or acetylene, and then utilized to prepare PEI/CNT composites. First, plasma polymerization conditions were optimized by measuring the solvent resistance of coatings in THF, chloroform and NMP, and the tensile strength of PEI/CNT (0.5%) composites as a function of plasma power (20~50 W) and monomer pressure (20~50 mTorr). The tensile strength of PEI/CNT composites was further evaluated as a function of CNT loading (0.2, 0.5 and 1%). Finally, FT-IR was utilized to provide a better understanding of the improved tensile properties of PEI/CNT composites via plasma polymerization coating of CNTs. Plasma polymerization of acrylic acid greatly enhanced the tensile strength of PEI/CNT composites, as did allylamine but to a lesser degree, while acetylene plasma polymerization coating decreased tensile strength.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1118-1121
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• 2009

We have fabricated inverted staggered pentacene Thin Film Transistor (TFT) with 1-${\mu}m$ channel length by micro contact printing (${\mu}$-CP) method. Patterning of micro-scale source/drain electrodes without etching was successfully achieved using silver nano particle ink, Polydimethylsiloxane (PDMS) stamp and FC-150 flip chip aligner-bonder. Sheet resistance of the printed Ag nano particle films were effectively reduced by two step annealing at $180^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1193-1196
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• 2009

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.