Proceedings of the Polymer Society of Korea Conference (한국고분자학회:학술대회논문집)

The Polymer Society of Korea (한국고분자학회)
권호 표지

Photobleaching Nonchemically Amplified Photoresists

  • Kim, Jin-Baek (Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Ganesan, Ramakrishnan (Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Kim, Kyoung-Seon (Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Choi, Jae-Hak (Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute)
  • Published : 2006.10.13
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Abstract

We designed and synthesized new type of nonchemically amplified polymeric and molecular resists and studied their lithographic performance. The polymeric resists [poly(DOBEMA-co-GBLMA)] show very high degree of photobleaching at 248 nm and moderate to good degree of photobleaching at 193 nm. The molecular resist (CDEOPE-POSS) shows high degree of photobleaching at 248 nm and modetate degree of photobleaching at 193 nm. CDEOPE-POSS possesses very high oxygen reactive ion etching resistance, which makes it suitable to be used as a bilayer resist. The lithographic studies of these resist materials suggest the feasibility of these materials to be used as single and bilayer resists.

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